LFUSCD30120B Equivalent & Substitute Parts

Part Overview

The LFUSCD30120B is a Silicon Carbide Schottky diode array manufactured by Littelfuse Inc., configured as a 1 Pair Common Cathode arrangement rated for 1200 V DC reverse voltage and 15 A average rectified current per diode. The device is packaged in TO-247-3 through-hole configuration and is RoHS3 compliant with active product status.

Substitute parts are identified to address application requirements including higher current ratings, alternative manufacturer sourcing, inventory availability, or specific performance characteristics while maintaining electrical and mechanical compatibility within the 1200 V SiC Schottky diode array category.

Key Parameters

Parameter	LFUSCD30120B
Manufacturer	Littelfuse Inc.
Diode Configuration	1 Pair Common Cathode
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io) (per Diode)	15 A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 15 A
Speed	Fast Recovery ≤ 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	375 µA @ 1200 V
Operating Temperature - Junction (Max)	175°C
Mounting Type	Through Hole
Package / Case	TO-247-3
RoHS Status	RoHS3 Compliant
Product Status	Active

Substitute Part Grouping Explanation

Substitution eligibility for the LFUSCD30120B is determined by the following mandatory parameters:

Fixed Parameters (Must Match):

Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Mounting Type: Through Hole
Package / Case: TO-247-3

Variable Parameters (Allowable Variation):

Current - Average Rectified (Io) (per Diode): 9 A to 27 A
Voltage - Forward (Vf) (Max) @ If: 1.5 V to 1.8 V
Current - Reverse Leakage @ Vr: 30 µA to 375 µA @ 1200 V
Operating Temperature - Junction: -55°C to 175°C (minimum -55°C, maximum 175°C)
Speed: Fast Recovery or No Recovery Time > 500mA (Io)

Substitute parts must maintain the 1200 V reverse voltage rating and TO-247-3 package while accommodating different current ratings and forward voltage characteristics within the SiC Schottky technology class.

Parameter Comparison

Part Number	Manufacturer	Io (per Diode)	Vf (Max) @ If	Vr (Max)	Reverse Leakage @ Vr	Operating Temp (Junction)	Speed Characteristic	Package
LFUSCD30120B	Littelfuse Inc.	15 A (DC)	1.7 V @ 15 A	1200 V	375 µA @ 1200 V	175°C (Max)	Fast Recovery ≤ 500ns, > 200mA (Io)	TO-247-3
C4D10120D	Wolfspeed, Inc.	9 A	1.8 V @ 5 A	1200 V	150 µA @ 1200 V	-55°C ~ 175°C	No Recovery Time > 500mA (Io)	TO-247-3
C4D15120D	Wolfspeed, Inc.	24.5 A (DC)	1.8 V @ 8 A	1200 V	250 µA @ 1200 V	-55°C ~ 175°C	No Recovery Time > 500mA (Io)	TO-247-3
C4D20120D	Wolfspeed, Inc.	16 A	1.8 V @ 10 A	1200 V	200 µA @ 1200 V	-55°C ~ 175°C	No Recovery Time > 500mA (Io)	TO-247-3
C4D30120D	Wolfspeed, Inc.	21.5 A	1.8 V @ 15 A	1200 V	200 µA @ 1200 V	-55°C ~ 175°C	No Recovery Time > 500mA (Io)	TO-247-3
C4D40120D	Wolfspeed, Inc.	27 A	1.8 V @ 20 A	1200 V	200 µA @ 1200 V	-55°C ~ 175°C	No Recovery Time > 500mA (Io)	TO-247-3
FFSH15120ADN-F155	Fairchild Semiconductor	8 A (DC)	1.75 V @ 8 A	1200 V	200 µA @ 1200 V	-55°C ~ 175°C	Fast Recovery ≤ 500ns, > 200mA (Io)	TO-247-3
FFSH20120ADN-F155	onsemi	10 A (DC)	1.75 V @ 10 A	1200 V	200 µA @ 1200 V	-55°C ~ 175°C	Fast Recovery ≤ 500ns, > 200mA (Io)	TO-247-3
FFSH30120ADN-F155	onsemi	15 A (DC)	1.75 V @ 15 A	1200 V	200 µA @ 1200 V	-55°C ~ 175°C	Fast Recovery ≤ 500ns, > 200mA (Io)	TO-247-3
FFSH40120ADN-F155	onsemi	20 A	1.75 V @ 20 A	1200 V	200 µA @ 1200 V	-55°C ~ 175°C	Fast Recovery ≤ 500ns, > 200mA (Io)	TO-247-3
STPSC10H12CWL	STMicroelectronics	19 A	1.5 V @ 5 A	1200 V	30 µA @ 1200 V	-40°C ~ 175°C	No Recovery Time > 500mA (Io)	TO-247-3

Engineering Selection Recommendations

Direct Equivalent (Identical Current Rating):

FFSH30120ADN-F155 (onsemi) provides electrical equivalence to the LFUSCD30120B with identical 15 A average rectified current per diode and matching 1200 V reverse voltage rating. Both devices feature Fast Recovery speed characteristics and operate across -55°C to 175°C junction temperature range. Forward voltage is 1.75 V @ 15 A compared to 1.7 V @ 15 A on the main part. RoHS3 compliance and TO-247-3 packaging are maintained.

Higher Current Capacity Substitutes:

C4D20120D (Wolfspeed, Inc.) provides 16 A current rating with 1200 V reverse voltage and TO-247-3 packaging. Forward voltage is 1.8 V @ 10 A. Reverse leakage is reduced to 200 µA @ 1200 V. Zero reverse recovery time characteristic is present.

C4D30120D (Wolfspeed, Inc.) provides 21.5 A current rating with 1200 V reverse voltage and TO-247-3 packaging. Forward voltage is 1.8 V @ 15 A. Reverse leakage is 200 µA @ 1200 V. Zero reverse recovery time characteristic is present.

C4D40120D (Wolfspeed, Inc.) provides 27 A current rating with 1200 V reverse voltage and TO-247-3 packaging. Forward voltage is 1.8 V @ 20 A. Reverse leakage is 200 µA @ 1200 V. Zero reverse recovery time characteristic is present.

FFSH40120ADN-F155 (onsemi) provides 20 A current rating with 1200 V reverse voltage and TO-247-3 packaging. Forward voltage is 1.75 V @ 20 A. Fast Recovery speed characteristic is maintained.

STPSC10H12CWL (STMicroelectronics) provides 19 A current rating with 1200 V reverse voltage and TO-247-3 packaging. Forward voltage is 1.5 V @ 5 A with significantly reduced reverse leakage of 30 µA @ 1200 V. Zero reverse recovery time characteristic is present.

Lower Current Capacity Substitutes:

C4D10120D (Wolfspeed, Inc.) provides 9 A current rating with 1200 V reverse voltage and TO-247-3 packaging. Forward voltage is 1.8 V @ 5 A. Reverse leakage is reduced to 150 µA @ 1200 V.

FFSH15120ADN-F155 (Fairchild Semiconductor) provides 8 A current rating with 1200 V reverse voltage and TO-247-3 packaging. Forward voltage is 1.75 V @ 8 A. Fast Recovery speed characteristic is maintained.

FFSH20120ADN-F155 (onsemi) provides 10 A current rating with 1200 V reverse voltage and TO-247-3 packaging. Forward voltage is 1.75 V @ 10 A. Fast Recovery speed characteristic is maintained.

All substitute parts maintain RoHS3 compliance and active product status. Selection between substitutes depends on application current requirements, thermal management capability, and forward voltage loss considerations.

Frequently Asked Questions (FAQ)

Q: Can C4D30120D replace LFUSCD30120B in all applications?

A: C4D30120D is electrically compatible as a substitute. It maintains the 1200 V reverse voltage rating and TO-247-3 package. The 21.5 A current rating exceeds the 15 A requirement of the main part. Forward voltage is 1.8 V @ 15 A compared to 1.7 V @ 15 A on the main part, resulting in approximately 0.1 V higher forward drop. Reverse leakage is reduced to 200 µA @ 1200 V from 375 µA @ 1200 V. Zero reverse recovery time replaces the Fast Recovery characteristic. Application compatibility depends on thermal design and forward voltage loss tolerance.

Q: What is the difference between Fast Recovery and No Recovery Time characteristics?

A: Fast Recovery indicates reverse recovery time ≤ 500 ns at currents > 200 mA. No Recovery Time > 500 mA (Io) indicates zero reverse recovery time at the specified current threshold. Both characteristics are acceptable within the 1200 V SiC Schottky diode array category. Selection depends on switching frequency requirements and EMI considerations in the application circuit.

Q: Is FFSH30120ADN-F155 a direct replacement for LFUSCD30120B?

A: FFSH30120ADN-F155 provides direct electrical equivalence with identical 15 A average rectified current per diode and 1200 V reverse voltage rating. Both devices feature Fast Recovery speed characteristics. Forward voltage is 1.75 V @ 15 A compared to 1.7 V @ 15 A on the main part. Reverse leakage is reduced to 200 µA @ 1200 V from 375 µA @ 1200 V. TO-247-3 packaging and RoHS3 compliance are maintained. The 0.05 V forward voltage difference is within typical application tolerance.

Q: Can lower current rated parts such as FFSH20120ADN-F155 (10 A) be used instead of LFUSCD30120B (15 A)?

A: Lower current rated parts are not suitable substitutes for applications requiring 15 A continuous current. FFSH20120ADN-F155 is rated for 10 A average rectified current per diode and would exceed its current rating in a 15 A application, resulting in thermal stress and reduced device reliability. Substitute parts must meet or exceed the current requirement of the application.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Diode Configuration must remain 1 Pair Common Cathode; (2) Technology must remain SiC (Silicon Carbide) Schottky; (3) Voltage - DC Reverse (Vr) (Max) must remain 1200 V; (4) Mounting Type must remain Through Hole; (5) Package / Case must remain TO-247-3. Current rating, forward voltage, reverse leakage, and speed characteristics may vary within the specified ranges of available substitute parts.

Q: Does STPSC10H12CWL have different operating temperature limits?

A: STPSC10H12CWL operates across -40°C to 175°C junction temperature range compared to -55°C to 175°C on most substitute parts and the main part. The minimum operating temperature is 15°C higher. Applications requiring operation below -40°C junction temperature must use alternative substitutes with -55°C minimum rating.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts maintain RoHS3 compliance status. FFSH15120ADN-F155 and FFSH20120ADN-F155 do not specify Moisture Sensitivity Level (MSL) in the provided data. All other parts including the main part LFUSCD30120B specify MSL 1 (Unlimited). Compliance certifications are maintained across the substitute part group.

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