LFUSCD20120B SiC Schottky Diode Array Equivalent & Substitute Parts

Part Overview

The LFUSCD20120B is a silicon carbide (SiC) Schottky diode array manufactured by Littelfuse Inc., configured as a 1 Pair Common Cathode arrangement rated for 1200 V DC reverse voltage with 10 A average rectified current per diode. This component is packaged in TO-247-3 through-hole configuration and is classified as Active product status with full RoHS3 compliance.

Substitute parts are identified to address application requirements including higher current ratings, improved thermal performance, alternative sourcing, or inventory availability while maintaining electrical and mechanical compatibility within the 1200 V SiC Schottky diode array category.

Key Parameters

Parameter	LFUSCD20120B
Manufacturer	Littelfuse Inc.
Diode Configuration	1 Pair Common Cathode
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io) (per Diode)	10 A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 20 A
Current - Reverse Leakage @ Vr	250 µA @ 1200 V
Operating Temperature - Junction (Max)	175°C
Mounting Type	Through Hole
Package / Case	TO-247-3
RoHS Status	RoHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution logic for the LFUSCD20120B is based on the following mandatory electrical and mechanical parameters:

Fixed Compatibility Criteria:

Voltage - DC Reverse (Vr) (Max): 1200 V (non-negotiable)
Diode Configuration: 1 Pair Common Cathode (required for circuit topology)
Technology: SiC (Silicon Carbide) Schottky (process technology match)
Mounting Type: Through Hole (mechanical requirement)
Package / Case: TO-247-3 (physical form factor)

Variable Parameters Allowing Substitution:

Current - Average Rectified (Io) (per Diode): 9 A to 27 A (rated current can be equal or higher)
Voltage - Forward (Vf) (Max) @ If: 1.5 V to 1.8 V (forward voltage variation within SiC Schottky range)
Current - Reverse Leakage @ Vr: 30 µA to 250 µA @ 1200 V (leakage variation acceptable)
Operating Temperature - Junction: -55°C to 175°C (temperature range variation acceptable)
Reverse Recovery Time (trr): 0 ns or Fast Recovery ≤ 500 ns (both acceptable for SiC technology)

Substitute parts must maintain identical voltage rating, configuration, technology, and package while allowing current rating at or above the original specification and compatible thermal/leakage characteristics.

Parameter Comparison

Part Number	Manufacturer	Io (per Diode)	Vf (Max) @ If	Vr (Max)	Leakage @ Vr	Tj (Max)	Package	Status
LFUSCD20120B	Littelfuse Inc.	10 A	1.7 V @ 20 A	1200 V	250 µA @ 1200 V	175°C	TO-247-3	Active
C4D10120D	Wolfspeed, Inc.	9 A	1.8 V @ 5 A	1200 V	150 µA @ 1200 V	175°C	TO-247-3	Active
C4D20120D	Wolfspeed, Inc.	16 A	1.8 V @ 10 A	1200 V	200 µA @ 1200 V	175°C	TO-247-3	Active
C4D30120D	Wolfspeed, Inc.	21.5 A	1.8 V @ 15 A	1200 V	200 µA @ 1200 V	175°C	TO-247-3	Active
C4D40120D	Wolfspeed, Inc.	27 A	1.8 V @ 20 A	1200 V	200 µA @ 1200 V	175°C	TO-247-3	Active
FFSH15120ADN-F155	Fairchild Semiconductor	8 A	1.75 V @ 8 A	1200 V	200 µA @ 1200 V	175°C	TO-247-3	Active
FFSH20120ADN-F155	onsemi	10 A	1.75 V @ 10 A	1200 V	200 µA @ 1200 V	175°C	TO-247-3	Active
FFSH30120ADN-F155	onsemi	15 A	1.75 V @ 15 A	1200 V	200 µA @ 1200 V	175°C	TO-247-3	Active
FFSH40120ADN-F155	onsemi	20 A	1.75 V @ 20 A	1200 V	200 µA @ 1200 V	175°C	TO-247-3	Active
STPSC10H12CWL	STMicroelectronics	19 A	1.5 V @ 5 A	1200 V	30 µA @ 1200 V	175°C	TO-247-3	Active

Engineering Selection Recommendations

All identified substitute parts maintain Active product status and RoHS3 compliance, ensuring long-term availability and regulatory conformance equivalent to the LFUSCD20120B.

Current Rating Considerations:

Parts rated below 10 A (C4D10120D at 9 A, FFSH15120ADN-F155 at 8 A) are not suitable for direct replacement in applications requiring the full 10 A specification. These parts are listed as substitutes only for applications with reduced current requirements.

Parts rated at or above 10 A (C4D20120D, C4D30120D, C4D40120D, FFSH20120ADN-F155, FFSH30120ADN-F155, FFSH40120ADN-F155, STPSC10H12CWL) are electrically compatible for applications requiring the original 10 A rating or higher current capacity.

Forward Voltage Characteristics:

STPSC10H12CWL exhibits the lowest forward voltage (1.5 V @ 5 A), resulting in reduced power dissipation. FFSH series parts (1.75 V) and C4D series parts (1.8 V) show moderate forward voltage variation. Selection based on thermal management requirements is determined by application-specific power budget constraints.

Reverse Leakage Performance:

STPSC10H12CWL demonstrates superior reverse leakage performance (30 µA @ 1200 V) compared to the original part (250 µA @ 1200 V). All other substitutes fall within 150–200 µA range, representing acceptable leakage variation for SiC Schottky technology.

Manufacturer Sourcing:

Wolfspeed (C4D series), onsemi (FFSH series), STMicroelectronics (STPSC series), and Fairchild Semiconductor (FFSH15120ADN-F155) provide alternative supply channels for 1200 V SiC Schottky diode arrays in TO-247-3 configuration.

Frequently Asked Questions (FAQ)

Q: Can C4D10120D (9 A) replace LFUSCD20120B (10 A) in all applications?

A: No. C4D10120D is rated for 9 A average rectified current, which is below the original 10 A specification. This part is suitable only for applications with maximum current requirements of 9 A or less. For applications requiring the full 10 A rating, use FFSH20120ADN-F155 or higher-rated alternatives.

Q: What is the difference between "Fast Recovery ≤ 500ns" and "No Recovery Time (0 ns)"?

A: Both specifications are acceptable for SiC Schottky diode arrays. The LFUSCD20120B and FFSH series specify Fast Recovery ≤ 500 ns with reverse recovery time greater than 200 mA. The C4D and STPSC series specify zero reverse recovery time (trr = 0 ns), which is characteristic of SiC Schottky technology. Both approaches are electrically compatible.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts listed are packaged in TO-247-3 through-hole configuration, matching the mechanical form factor of LFUSCD20120B. Packaging variations (Tube, Bulk) refer to supply format only and do not affect component functionality or mounting.

Q: Which substitute offers the best thermal performance?

A: STPSC10H12CWL exhibits the lowest forward voltage (1.5 V @ 5 A) and lowest reverse leakage (30 µA @ 1200 V), resulting in reduced power dissipation and improved thermal efficiency. However, thermal performance in application depends on circuit design, heat sinking, and duty cycle.

Q: Can I use a higher-rated part like C4D40120D (27 A) in place of LFUSCD20120B (10 A)?

A: Yes. C4D40120D is electrically compatible and maintains all required specifications (1200 V, 1 Pair Common Cathode, TO-247-3, SiC Schottky). The higher current rating (27 A) does not create incompatibility; the circuit will operate within the 10 A requirement. Physical dimensions and pin configuration are identical.

Q: What is the significance of RoHS3 compliance for all parts?

A: RoHS3 compliance confirms that all substitute parts meet the same environmental and hazardous substance restrictions as the original LFUSCD20120B. This ensures regulatory equivalence for applications subject to RoHS directives and supports long-term supply chain sustainability.

Q: Are there differences in operating temperature range between substitutes?

A: Most substitutes operate from -55°C to 175°C junction temperature. The LFUSCD20120B and FFSH15120ADN-F155 specify maximum junction temperature of 175°C without lower limit specification. STPSC10H12CWL specifies -40°C to 175°C. All parts are suitable for standard industrial temperature ranges; applications requiring extended low-temperature operation should verify specific part specifications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message