LF353N Equivalent & Substitute Parts

Part Overview

The LF353N is a J-FET input operational amplifier manufactured by STMicroelectronics, configured as a dual-channel (2 circuit) device in an 8-pin Mini DIP package. This component is classified as obsolete, though 18,900 units remain in stock as new original inventory. The LF353N operates across a wide supply voltage range of 6V to 36V and is designed for applications requiring low input bias current and high input impedance characteristics inherent to J-FET amplifier topology.

Due to the obsolete product status of the LF353N, identifying equivalent and substitute parts is essential for design continuity, long-term component availability, and production planning. Substitute parts listed below maintain functional compatibility through matching amplifier type, circuit count, package format, and critical electrical parameters within specified tolerances.

Key Parameters

Parameter	LF353N Value	Unit
Amplifier Type	J-FET	—
Number of Circuits	2	—
Package / Case	8-DIP (0.300", 7.62mm)	—
Mounting Type	Through Hole	—
Slew Rate	16	V/µs
Gain Bandwidth Product	4	MHz
Current - Input Bias	20	pA
Voltage - Input Offset	3	mV
Current - Supply	1.4 (x2 Channels)	mA
Current - Output / Channel	40	mA
Voltage - Supply Span (Min)	6	V
Voltage - Supply Span (Max)	36	V
Operating Temperature	0 to 70	°C
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the LF353N are grouped based on strict adherence to the following critical parameters:

Primary Substitution Criteria:

Amplifier Type: J-FET (maintains input impedance and bias current characteristics)
Number of Circuits: 2 (dual-channel configuration)
Package / Case: 8-DIP (0.300", 7.62mm) (ensures mechanical and electrical pin compatibility)
Mounting Type: Through Hole (maintains PCB assembly compatibility)

Secondary Compatibility Parameters:

Slew Rate: 13V/µs to 20V/µs (operational performance envelope)
Gain Bandwidth Product: 3 MHz to 4 MHz (frequency response compatibility)
Current - Input Bias: 3 pA to 50 pA (low-bias J-FET characteristic)
Voltage - Input Offset: 300 µV to 5 mV (DC accuracy range)
Voltage - Supply Span: Minimum 6V to 10V; Maximum 36V to 40V (supply compatibility)
Operating Temperature: 0°C to 70°C (thermal operating range)

Compliance Requirements:

RoHS3 Compliant
Moisture Sensitivity Level: 1 (Unlimited)
REACH Unaffected status

Parts that deviate from J-FET amplifier type (such as general-purpose amplifiers AD706JNZ and AD827JNZ) are included for reference but represent functional alternatives rather than direct substitutes, as they employ different amplifier topologies with different input bias current and impedance characteristics.

Parameter Comparison

Part Number	Manufacturer	Product Status	Amplifier Type	Slew Rate (V/µs)	GBW (MHz)	Input Bias (pA)	Input Offset (mV)	Supply Min (V)	Supply Max (V)	Temp Range (°C)
LF353N	STMicroelectronics	Obsolete	J-FET	16	4	20	3	6	36	0 to 70
AD648JNZ	Analog Devices Inc.	Active	J-FET	1.8	1	5	0.75	9	36	0 to 70
AD648KNZ	Analog Devices Inc.	Active	J-FET	1.8	1	3	0.3	9	36	0 to 70
AD706JNZ	Analog Devices Inc.	Active	General Purpose	0.15	0.8	50	0.03	4	36	0 to 70
AD712JNZ	Analog Devices Inc.	Active	J-FET	20	4	25	0.3	9	36	0 to 70
AD712KNZ	Analog Devices Inc.	Active	J-FET	20	4	25	0.3	9	36	0 to 70
AD827JNZ	Analog Devices Inc.	Active	General Purpose	300	50	3300	0.3	9	36	0 to 70
CA3240EZ	Renesas Electronics Corporation	Active	General Purpose	9	4.5	10	5	4	36	-40 to 85
LF353N/NOPB	Texas Instruments	Active	J-FET	13	4	50	5	10	36	0 to 70
LF353P	Texas Instruments	Active	J-FET	13	3	50	5	7	36	0 to 70
LF412CN/NOPB	Texas Instruments	Active	J-FET	15	4	50	1	10	40	0 to 70

Engineering Selection Recommendations

Direct J-FET Substitutes (Highest Compatibility):

The following parts maintain J-FET amplifier topology and are suitable for direct substitution in applications where the LF353N is specified:

LF353N/NOPB (Texas Instruments, Active): This variant represents the active production equivalent of the obsolete LF353N. Electrical parameters align closely with the original part, with slew rate of 13V/µs and 4 MHz gain bandwidth product. The minimum supply voltage requirement increases to 10V. This part is recommended as the primary replacement for new designs and production continuity.
LF353P (Texas Instruments, Active): An alternative Texas Instruments J-FET dual amplifier with 3 MHz gain bandwidth product and 13V/µs slew rate. Minimum supply voltage is 7V, providing broader supply compatibility than LF353N/NOPB. Current supply requirement matches the original specification at 3.6mA per dual channel.
LF412CN/NOPB (Texas Instruments, Active): A precision J-FET amplifier with superior input offset voltage (1 mV versus 3 mV). Slew rate of 15V/µs and 4 MHz gain bandwidth product provide performance comparable to the LF353N. Maximum supply voltage extends to 40V. This part is suitable for applications requiring lower DC offset specifications.
AD712JNZ and AD712KNZ (Analog Devices Inc., Active): Dual J-FET amplifiers with 20V/µs slew rate and 4 MHz gain bandwidth product, exceeding the LF353N performance envelope. Input bias current of 25 pA and input offset voltage of 300 µV represent improved specifications. Minimum supply voltage is 9V. These parts are suitable for high-performance applications where enhanced slew rate is beneficial.

Functional Alternatives (Different Topology):

The following parts employ general-purpose amplifier topology rather than J-FET input stages and are listed for reference in applications where input impedance and bias current characteristics are not critical:

CA3240EZ (Renesas Electronics Corporation, Active): A general-purpose dual amplifier with extended operating temperature range (-40°C to 85°C). Slew rate of 9V/µs and 4.5 MHz gain bandwidth product provide comparable frequency response. Minimum supply voltage of 4V offers broader supply compatibility. Input bias current of 10 pA remains low despite general-purpose topology.
AD706JNZ (Analog Devices Inc., Active): A general-purpose dual amplifier with 800 kHz gain bandwidth product and 0.15V/µs slew rate. This part represents reduced performance specifications and is suitable only for low-frequency applications where the LF353N's 4 MHz bandwidth is not required.
AD827JNZ (Analog Devices Inc., Active): A high-speed general-purpose dual amplifier with 50 MHz gain bandwidth product and 300V/µs slew rate. This part is suitable for applications requiring significantly higher bandwidth than the LF353N provides. Input bias current of 3.3 µA is substantially higher than J-FET alternatives.

Compliance and Availability:

All substitute parts listed maintain RoHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1 (Unlimited), ensuring regulatory and environmental compatibility with the original LF353N specification. Active product status for all substitute parts ensures long-term availability and production support.

Frequently Asked Questions (FAQ)

Q: Can I directly replace an LF353N with LF353N/NOPB in my existing design?

A: Yes. The LF353N/NOPB is the active production equivalent manufactured by Texas Instruments. Both parts share identical J-FET amplifier topology, dual-channel configuration, and 8-DIP package format. Electrical parameters are closely matched, with the primary difference being the minimum supply voltage requirement of 10V for LF353N/NOPB versus 6V for the original LF353N. Verify your circuit's supply voltage meets this requirement before substitution.

Q: What is the difference between LF353P and LF353N/NOPB?

A: Both are Texas Instruments J-FET dual amplifiers in 8-DIP packages with 13V/µs slew rate. The primary difference is the gain bandwidth product: LF353P specifies 3 MHz while LF353N/NOPB specifies 4 MHz. Additionally, LF353P has a lower minimum supply voltage of 7V compared to 10V for LF353N/NOPB. For applications requiring 4 MHz bandwidth, LF353N/NOPB is the preferred choice.

Q: Are AD712JNZ and AD712KNZ interchangeable?

A: Yes. Both are Analog Devices J-FET dual amplifiers with identical electrical specifications: 20V/µs slew rate, 4 MHz bandwidth, and 25 pA input bias current. The primary difference is the input offset voltage specification: AD712KNZ specifies 300 µV while AD712JNZ specifies 300 µV as well. Both parts are suitable for direct substitution in applications where the LF353N's performance envelope is exceeded.

Q: Can I use a general-purpose amplifier like CA3240EZ instead of the LF353N?

A: General-purpose amplifiers such as CA3240EZ employ different input stage topology than J-FET amplifiers. While CA3240EZ maintains the 8-DIP package format and dual-channel configuration, the input bias current of 10 pA and different frequency response characteristics may affect circuit performance in applications sensitive to input impedance or bias current. Use general-purpose alternatives only when the application does not require J-FET input characteristics.

Q: What is the minimum supply voltage requirement for each substitute part?

A: Supply voltage requirements vary across substitute parts. The LF353N operates from 6V minimum. Texas Instruments variants (LF353N/NOPB, LF353P, LF412CN/NOPB) require 10V, 7V, and 10V minimum respectively. Analog Devices J-FET variants (AD648JNZ, AD648KNZ, AD712JNZ, AD712KNZ) require 9V minimum. CA3240EZ operates from 4V minimum. Verify your circuit's supply voltage compatibility before selecting a substitute part.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected status, matching the regulatory compliance of the original LF353N. Moisture Sensitivity Level 1 (Unlimited) is maintained across all parts, ensuring consistent handling and storage requirements.

Q: What is the operating temperature range for each substitute part?

A: Most substitute parts operate across 0°C to 70°C, matching the LF353N specification. The exception is CA3240EZ, which operates across an extended range of -40°C to 85°C. Select CA3240EZ for applications requiring operation outside the standard 0°C to 70°C range.

Q: Can I use LF412CN/NOPB as a direct replacement for LF353N?

A: LF412CN/NOPB is a suitable substitute with enhanced specifications. Both are J-FET dual amplifiers in 8-DIP packages with 4 MHz gain bandwidth product. LF412CN/NOPB offers superior input offset voltage (1 mV versus 3 mV) and slightly higher slew rate (15V/µs versus 16V/µs). The minimum supply voltage requirement is 10V. This part is recommended for applications where improved DC accuracy is beneficial.

Q: What is the difference between AD648JNZ and AD648KNZ?

A: Both are Analog Devices J-FET dual amplifiers with identical slew rate (1.8V/µs) and gain bandwidth product (1 MHz). The primary difference is input offset voltage: AD648KNZ specifies 300 µV while AD648JNZ specifies 750 µV. Additionally, AD648KNZ specifies lower input bias current at 3 pA versus 5 pA for AD648JNZ. Select AD648KNZ for applications requiring lower DC offset specifications.

Q: Are there any package format differences between the LF353N and its substitutes?

A: All substitute parts maintain the 8-DIP (0.300", 7.62mm) package format with through-hole mounting, ensuring mechanical and electrical pin compatibility with the original LF353N. No package conversion or PCB redesign is required for substitution.

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