LE25S20MB-AH Equivalent & Substitute Parts

Part Overview

The LE25S20MB-AH is a 2Mbit SPI FLASH memory IC manufactured by onsemi, housed in an 8-SOIC package. This non-volatile memory device operates at 40 MHz with a supply voltage range of 1.65V to 1.95V and is designed for embedded systems requiring compact, reliable data storage. The part is currently in active production status with ROHS3 compliance and is suitable for applications requiring low-power, serial interface memory solutions.

Equivalent and substitute parts are identified based on matching core functional parameters: 2Mbit capacity, 256K x 8 organization, SPI interface, 8-SOIC package form factor, non-volatile FLASH technology, and compatible operating temperature ranges. Substitutes must maintain electrical compatibility within the specified voltage and frequency operating windows.

Key Parameters

Parameter	LE25S20MB-AH
Memory Size	2Mbit
Memory Organization	256K x 8
Memory Interface	SPI
Clock Frequency	40 MHz
Voltage Supply Range	1.65V ~ 1.95V
Operating Temperature	-40°C ~ 85°C
Package / Case	8-SOIC (0.154", 3.90mm Width)
Write Cycle Time (Page)	4.6ms
RoHS Status	ROHS3 Compliant
Product Status	Active

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following mandatory parameters:

Memory Capacity & Organization: All substitutes must provide 2Mbit capacity with 256K x 8 organization to ensure pin-compatible operation and identical address/data bus requirements.
Interface Protocol: SPI interface is required for direct protocol compatibility without firmware modification.
Package Form Factor: 8-SOIC (0.154", 3.90mm Width) package ensures mechanical and electrical pin compatibility on existing PCB layouts.
Voltage Compatibility: Substitute parts must operate within or encompass the 1.65V ~ 1.95V supply range of the LE25S20MB-AH. Parts with extended voltage ranges (1.65V ~ 3.6V) are acceptable as they maintain backward compatibility.
Operating Temperature Range: Substitutes operating at -40°C ~ 85°C are directly compatible. Parts rated to -40°C ~ 125°C provide extended temperature capability and remain suitable.
Technology & Memory Type: Non-volatile FLASH technology is required to maintain data retention characteristics.

The four identified substitutes meet all mandatory substitution criteria. Variations in clock frequency (40 MHz to 104 MHz) and write cycle times represent performance enhancements rather than compatibility barriers, as faster operation is backward compatible with designs specified for lower frequencies.

Parameter Comparison

Parameter	LE25S20MB-AH (onsemi)	AT25DF021A-SSHN-T (Renesas)	AT25DF021A-SSHNHR-T (Renesas)	AT25XE021A-SSHN-T (Renesas)	SST25WF020A-40I/SN (Microchip)
Memory Size	2Mbit	2Mbit	2Mbit	2Mbit	2Mbit
Memory Organization	256K x 8	256K x 8	256K x 8	256K x 8	256K x 8
Memory Interface	SPI	SPI	SPI	SPI	SPI
Clock Frequency	40 MHz	104 MHz	85 MHz	70 MHz	40 MHz
Voltage Supply Range	1.65V ~ 1.95V	1.65V ~ 3.6V	1.65V ~ 3.6V	1.65V ~ 3.6V	1.65V ~ 1.95V
Operating Temperature	-40°C ~ 85°C	-40°C ~ 85°C	-40°C ~ 125°C	-40°C ~ 85°C	-40°C ~ 85°C
Package / Case	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)	8-SOIC (0.154", 3.90mm Width)
Write Cycle Time (Page)	4.6ms	2.5ms	2.5ms	5ms	4.6ms
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All four substitute parts are active production components with ROHS3 compliance, meeting regulatory requirements equivalent to the LE25S20MB-AH.

Direct Equivalents (Identical Electrical Specifications):

SST25WF020A-40I/SN (Microchip Technology): Matches the LE25S20MB-AH exactly in clock frequency (40 MHz), voltage supply range (1.65V ~ 1.95V), operating temperature (-40°C ~ 85°C), and write cycle time (4.6ms). This part is DiGi-Electronics Programmable Verified and represents the closest functional equivalent. Packaging differs (Tube vs. unspecified for main part) but does not affect electrical compatibility.

Higher Performance Substitutes (Extended Capabilities):

AT25DF021A-SSHN-T (Renesas Electronics): Offers 104 MHz clock frequency with faster write cycle time (2.5ms) while maintaining -40°C ~ 85°C operating range. Extended voltage range (1.65V ~ 3.6V) provides design flexibility. DiGi-Electronics Programmable Verified status confirms compatibility.
AT25DF021A-SSHNHR-T (Renesas Electronics): Provides 85 MHz clock frequency with extended operating temperature range (-40°C ~ 125°C), suitable for high-temperature applications. Extended voltage range (1.65V ~ 3.6V) and faster write cycle time (2.5ms) offer performance advantages.
AT25XE021A-SSHN-T (Renesas Electronics): Operates at 70 MHz with extended voltage range (1.65V ~ 3.6V). Page write cycle time is 5ms, which is slower than the main part but remains within acceptable parameters for non-time-critical applications.

Frequently Asked Questions (FAQ)

Q: Can I use AT25DF021A-SSHN-T as a direct replacement for LE25S20MB-AH?

A: Yes. Both parts share identical memory capacity (2Mbit), organization (256K x 8), SPI interface, 8-SOIC package, and operating temperature range (-40°C ~ 85°C). The AT25DF021A-SSHN-T operates at 104 MHz versus 40 MHz, which is a performance enhancement that does not compromise compatibility. The extended voltage range (1.65V ~ 3.6V) encompasses the LE25S20MB-AH specification (1.65V ~ 1.95V).

Q: What is the difference between AT25DF021A-SSHN-T and AT25DF021A-SSHNHR-T?

A: Both are Renesas 2Mbit SPI FLASH devices in 8-SOIC packages. The primary difference is operating temperature range: AT25DF021A-SSHN-T operates at -40°C ~ 85°C, while AT25DF021A-SSHNHR-T extends to -40°C ~ 125°C. The latter also operates at 85 MHz versus 104 MHz. Select AT25DF021A-SSHNHR-T for applications requiring high-temperature operation.

Q: Is the SST25WF020A-40I/SN identical to the LE25S20MB-AH?

A: Electrically and functionally, yes. Both operate at 40 MHz, share the same voltage range (1.65V ~ 1.95V), temperature range (-40°C ~ 85°C), and write cycle time (4.6ms). The only difference is packaging format (Tube for SST25WF020A-40I/SN). Pin configuration and memory organization are identical.

Q: Can I use AT25XE021A-SSHN-T if my application requires faster write cycles?

A: No. The AT25XE021A-SSHN-T has a page write cycle time of 5ms, which is slower than the LE25S20MB-AH (4.6ms). If write speed is critical, select AT25DF021A-SSHN-T or AT25DF021A-SSHNHR-T, both offering 2.5ms page write cycles.

Q: Are all substitutes RoHS compliant?

A: Yes. All four substitute parts are ROHS3 compliant, matching the LE25S20MB-AH compliance status.

Q: What does "DiGi-Electronics Programmable Verified" mean?

A: This certification indicates that the part has been tested and verified for compatibility with DiGi-Electronics programming and integration processes. AT25DF021A-SSHN-T and SST25WF020A-40I/SN carry this verification, providing additional assurance of compatibility.

Q: Can I use these substitutes in a 3.3V system?

A: The LE25S20MB-AH is specified for 1.65V ~ 1.95V and is not rated for 3.3V operation. However, AT25DF021A-SSHN-T, AT25DF021A-SSHNHR-T, and AT25XE021A-SSHN-T all support 1.65V ~ 3.6V, making them suitable for 3.3V systems. SST25WF020A-40I/SN maintains the 1.65V ~ 1.95V specification and is not suitable for 3.3V applications.

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