L14F2 Phototransistor 880nm Equivalent & Substitute Parts

Part Overview

The L14F2 is an 880nm phototransistor manufactured by onsemi in a TO-206AA (TO-18-3 Metal Can) package. This component is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. The L14F2 operates across an extended temperature range of -65°C to 125°C and is designed for through-hole mounting applications requiring infrared photodetection at 880nm wavelength.

Substiute Parts

L14F2
onsemiIn Stock: 1066L14F2 Datasheet
L14F2
Current Part
OP804SL
TT Electronics/Optek TechnologyIn Stock: 2733OP804SL Datasheet
OP804SL
Similar
OP830SL
TT Electronics/Optek TechnologyIn Stock: 2950OP830SL Datasheet
OP830SL
Similar
OP830WSL
TT Electronics / Optek TechnologyIn Stock: 1759OP830WSL Datasheet
OP830WSL
Similar

Key Parameters

Parameter Value
Manufacturer Part Number L14F2
Manufacturer onsemi
Category Optical Sensors
Package / Case TO-206AA, TO-18-3 Metal Can
Wavelength 880nm
Voltage - Collector Emitter Breakdown (Max) 25 V
Current - Dark (Id) (Max) 100 nA
Power - Max 300 mW
Viewing Angle 16°
Mounting Type Through Hole
Orientation Top View
Operating Temperature -65°C ~ 125°C
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution eligibility for the L14F2 is determined by the following critical parameters:

  • Package compatibility: All substitutes must use TO-206AA (TO-18-3 Metal Can) through-hole package
  • Mounting orientation: Top View orientation required
  • Operating temperature range: Minimum -65°C to 125°C support
  • Electrical ratings: Collector-Emitter breakdown voltage and dark current specifications must meet or exceed application requirements
  • Power dissipation: Maximum power rating must support circuit design
  • Wavelength sensitivity: 880nm or adjacent near-infrared wavelengths (890nm) acceptable for similar photodetection applications

Three active substitute parts meet these criteria: OP804SL (890nm), OP830SL, and OP830WSL, all manufactured by TT Electronics/Optek Technology in identical TO-206AA packages with compatible through-hole mounting.

Parameter Comparison

Parameter L14F2 (Main) OP804SL OP830SL OP830WSL
Manufacturer onsemi TT Electronics/Optek Technology TT Electronics/Optek Technology TT Electronics/Optek Technology
Product Status Obsolete Active Active Active
Package / Case TO-206AA, TO-18-3 Metal Can TO-206AA, TO-18-3 Metal Can TO-206AA, TO-18-3 Metal Can TO-206AA, TO-18-3 Metal Can
Wavelength 880nm 890nm Not specified Not specified
Voltage - Collector Emitter Breakdown (Max) 25 V 30 V 15 V 15 V
Current - Dark (Id) (Max) 100 nA 100 nA 1 µA 1 µA
Power - Max 300 mW 250 mW 250 mW 250 mW
Viewing Angle 16° Not specified Not specified Not specified
Mounting Type Through Hole Through Hole Through Hole Through Hole
Orientation Top View Top View Top View Top View
Operating Temperature -65°C ~ 125°C -65°C ~ 125°C -65°C ~ 125°C -55°C ~ 125°C
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

OP804SL is the closest functional equivalent to the L14F2. It operates at 890nm wavelength (10nm offset from the original 880nm specification), maintains identical dark current performance (100 nA maximum), and exceeds the collector-emitter breakdown voltage rating (30 V vs. 25 V). The OP804SL is currently in active production status with ROHS3 compliance certification, making it suitable for new designs and production continuity.

OP830SL and OP830WSL are alternative substitutes with identical package and mounting specifications. Both parts are ROHS3 compliant and active products. The primary trade-off is reduced collector-emitter breakdown voltage (15 V maximum) and increased dark current (1 µA maximum) compared to the L14F2. OP830WSL supports a narrower operating temperature range (-55°C to 125°C) versus the L14F2 specification (-65°C to 125°C), which may limit suitability for extreme low-temperature applications.

All three substitute parts carry REACH Unaffected and EAR99 ECCN classifications matching the original L14F2 regulatory status.

Frequently Asked Questions (FAQ)

Q: Can OP804SL directly replace L14F2 in existing designs?

A: OP804SL shares identical TO-206AA package, through-hole mounting, top-view orientation, and operating temperature range (-65°C to 125°C). The 10nm wavelength difference (890nm vs. 880nm) and superior electrical ratings (30 V breakdown vs. 25 V) make it functionally compatible for most infrared photodetection applications. Circuit validation is required to confirm wavelength sensitivity requirements.

Q: What is the difference between OP830SL and OP830WSL?

A: Both parts are electrically identical with 15 V collector-emitter breakdown voltage and 1 µA maximum dark current. The primary difference is operating temperature range: OP830SL supports -65°C to 125°C (matching L14F2), while OP830WSL is rated -55°C to 125°C. For applications requiring full -65°C operation, OP830SL is the appropriate selection.

Q: Why do OP830SL and OP830WSL have lower breakdown voltage than L14F2?

A: The OP830 series is designed for different application requirements with 15 V maximum collector-emitter breakdown voltage versus the L14F2's 25 V rating. Circuit design must accommodate this reduced voltage specification. If 25 V breakdown voltage is mandatory, OP804SL is the required substitute.

Q: Are all substitute parts RoHS compliant?

A: Yes. OP804SL, OP830SL, and OP830WSL are all ROHS3 compliant. The L14F2 RoHS status was not specified in available documentation.

Q: What is the dark current significance in phototransistor selection?

A: Dark current (leakage current without incident light) affects signal-to-noise ratio and minimum detectable light levels. L14F2 and OP804SL both specify 100 nA maximum dark current, while OP830SL and OP830WSL specify 1 µA maximum. For low-light detection applications, L14F2 or OP804SL are preferred.

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