KTC3198-Y A1G Equivalent & Substitute Parts

Part Overview

The KTC3198-Y A1G is an NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation, designed for general-purpose switching and amplification applications. This device features a 50 V collector-emitter breakdown voltage, 150 mA maximum collector current, and 500 mW power dissipation in a Through Hole TO-92 package. The part is classified as obsolete, necessitating identification of active equivalent components for new designs and ongoing production requirements.

Key Parameters

Parameter	Value
Transistor Type	NPN
Current - Collector (Ic) (Max)	150 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 2mA, 6V
Power - Max	500 mW
Frequency - Transition	80MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Substitute Part Grouping Explanation

Substitution of the KTC3198-Y A1G is determined by electrical and mechanical parameter equivalence within the NPN bipolar junction transistor category. The critical parameters establishing substitution eligibility are:

Transistor Type: NPN configuration
Current Rating: 150 mA maximum collector current
Voltage Rating: 50 V collector-emitter breakdown voltage
Saturation Characteristics: 250mV @ 10mA, 100mA
Current Gain: 70 minimum hFE @ 2mA, 6V
Transition Frequency: 80MHz
Package Type: TO-92-3 Through Hole configuration
Compliance: RoHS3 and REACH compliance

The KSC1815YTA from onsemi meets all specified electrical parameters and package requirements, establishing it as a direct functional equivalent. Both devices operate within identical voltage and current specifications, maintain equivalent saturation characteristics, and share the same transition frequency and gain characteristics.

Parameter Comparison

Parameter	KTC3198-Y A1G	KSC1815YTA	Match Status
Transistor Type	NPN	NPN	Equivalent
Current - Collector (Ic) (Max)	150 mA	150 mA	Equivalent
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	Equivalent
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA	250mV @ 10mA, 100mA	Equivalent
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	Equivalent
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 2mA, 6V	70 @ 2mA, 6V	Equivalent
Frequency - Transition	80MHz	80MHz	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3	Equivalent
Power - Max	500 mW	400 mW	KSC1815YTA rated lower
Operating Temperature (TJ)	-55°C ~ 150°C	150°C	KSC1815YTA upper limit only
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
REACH Status	REACH Unaffected	REACH Unaffected	Equivalent

Engineering Selection Recommendations

The KSC1815YTA is a direct electrical equivalent to the KTC3198-Y A1G for applications operating within the specified parameter ranges. Both devices maintain identical voltage, current, gain, and frequency characteristics, ensuring functional interchangeability in circuit designs.

The KSC1815YTA offers the advantage of active product status from onsemi, providing ongoing availability and supply chain continuity compared to the obsolete KTC3198-Y A1G. Both components maintain RoHS3 and REACH compliance, satisfying regulatory requirements for current manufacturing standards.

The KSC1815YTA specifies a maximum power dissipation of 400 mW compared to the 500 mW rating of the KTC3198-Y A1G. Applications requiring power dissipation above 400 mW must account for this reduced rating in thermal design calculations. The KSC1815YTA operating temperature specification indicates a maximum junction temperature of 150°C, whereas the KTC3198-Y A1G specifies a range of -55°C to 150°C. Applications requiring operation below 0°C require confirmation of KSC1815YTA low-temperature performance specifications.

Frequently Asked Questions (FAQ)

Q: Can the KSC1815YTA directly replace the KTC3198-Y A1G in existing designs?

A: The KSC1815YTA is electrically equivalent for all specified parameters including voltage rating, current rating, gain characteristics, and transition frequency. Direct replacement is supported for applications operating within the KSC1815YTA power dissipation and temperature specifications.

Q: What is the significance of the power rating difference between these devices?

A: The KTC3198-Y A1G is rated for 500 mW maximum power dissipation, while the KSC1815YTA is rated for 400 mW. Applications dissipating between 400 mW and 500 mW require thermal analysis to confirm the KSC1815YTA operates within acceptable temperature limits. Applications dissipating 400 mW or less are unaffected by this difference.

Q: Are the TO-92-3 packages physically identical?

A: Both devices use the TO-226-3 and TO-92-3 (TO-226AA) Formed Leads package designation, indicating physical and mechanical compatibility. Pin configuration and lead spacing are identical, supporting direct board-level substitution.

Q: What compliance certifications apply to both devices?

A: Both the KTC3198-Y A1G and KSC1815YTA are RoHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and use.

Q: Why is the KTC3198-Y A1G classified as obsolete?

A: Obsolete classification indicates the manufacturer has discontinued production. The KSC1815YTA from onsemi maintains active product status with ongoing manufacturing and supply availability.

Q: Are there temperature range considerations for substitution?

A: The KTC3198-Y A1G specifies operating temperature from -55°C to 150°C. The KSC1815YTA specifies a maximum junction temperature of 150°C without explicit lower temperature specification. Applications requiring operation below 0°C should reference the KSC1815YTA detailed datasheet for low-temperature performance confirmation.

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