KTA2014-GR-TP Equivalent & Substitute Parts

Part Overview

The KTA2014-GR-TP is a PNP bipolar junction transistor manufactured by Micro Commercial Co, designed for surface mount applications in the SOT-323 package. This component operates at 50V collector-emitter breakdown voltage with a maximum collector current of 150 mA and 100 mW power dissipation. The device is classified as obsolete, necessitating identification of active equivalent and substitute parts for new designs and ongoing production support.

Key Parameters

Parameter	Value
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	50 V
Current - Collector (Ic) (Max)	150 mA
Power - Max	100 mW
Frequency - Transition	80 MHz
Package / Case	SC-70, SOT-323
Mounting Type	Surface Mount
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the KTA2014-GR-TP is determined by strict electrical and mechanical compatibility across the following parameters:

Primary Compatibility Criteria:

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 50 V minimum
Current - Collector (Ic) (Max): 150 mA minimum
Package / Case: SC-70 or SOT-323
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level: 1 (Unlimited)

Secondary Considerations:

Power dissipation capability (100 mW or greater)
Frequency - Transition (80 MHz or greater)
DC Current Gain (hFE) compatibility
Vce Saturation characteristics
Product Status (Active preferred for new designs)

Substitute parts are grouped into two categories: direct equivalents meeting all primary criteria with identical electrical performance, and similar parts meeting primary criteria with enhanced specifications suitable for design flexibility.

Parameter Comparison

Parameter	KTA2014-GR-TP	2SA1586-GR,LF	2PA1576Q,135	2PA1576S,115	2SA1576AT106R
Manufacturer	Micro Commercial Co	Toshiba Semiconductor and Storage	Nexperia USA Inc.	Nexperia USA Inc.	Rohm Semiconductor
Product Status	Obsolete	Active	Active	Active	Not For New Designs
Transistor Type	PNP	PNP	PNP	PNP	PNP
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V	50 V
Current - Collector (Ic) (Max)	150 mA	150 mA	150 mA	150 mA	150 mA
Power - Max	100 mW	100 mW	200 mW	200 mW	200 mW
Frequency - Transition	80 MHz	80 MHz	100 MHz	100 MHz	140 MHz
Package / Case	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323	SC-70, SOT-323
Supplier Device Package	SOT-323	SC-70	SOT-323	SOT-323	UMT3
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V	200 @ 2mA, 6V	120 @ 1mA, 6V	270 @ 1mA, 6V	180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA	300mV @ 10mA, 100mA	500mV @ 5mA, 50mA	500mV @ 5mA, 50mA	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
Operating Temperature (TJ)	150°C	125°C	150°C	150°C	150°C

Engineering Selection Recommendations

Direct Equivalent - Recommended for Replacement:

The 2SA1586-GR,LF (Toshiba Semiconductor and Storage) is the primary direct equivalent for the KTA2014-GR-TP. This part maintains identical electrical specifications including 50V breakdown voltage, 150 mA collector current, 100 mW power dissipation, and 80 MHz transition frequency. The 2SA1586-GR,LF is classified as Active, ensuring long-term availability and supply chain stability. Both parts share identical DC current gain characteristics (200 @ 2mA, 6V) and Vce saturation parameters (300mV @ 10mA, 100mA). The primary difference is the supplier device package designation (SC-70 versus SOT-323), though both are mechanically and electrically compatible SC-70/SOT-323 packages. This part is suitable for direct substitution in existing designs.

Enhanced Alternatives - For New Designs:

The 2PA1576Q,135 and 2PA1576S,115 (Nexperia USA Inc.) are active alternatives offering enhanced specifications. Both parts maintain the 50V breakdown voltage and 150 mA collector current but provide doubled power dissipation (200 mW), increased transition frequency (100 MHz), and automotive-grade qualification (AEC-Q101). These parts are suitable for applications requiring higher performance margins or automotive compliance. The 2PA1576S,115 offers superior DC current gain (270 @ 1mA, 6V) compared to the original specification.

Legacy Alternative - Not Recommended for New Designs:

The 2SA1576AT106R (Rohm Semiconductor) meets all primary compatibility criteria with enhanced transition frequency (140 MHz) and power dissipation (200 mW). However, this part is classified as Not For New Designs, limiting its suitability for new product development despite superior electrical performance.

Frequently Asked Questions (FAQ)

Q: Can the 2SA1586-GR,LF directly replace the KTA2014-GR-TP in existing designs?

A: Yes. The 2SA1586-GR,LF is a direct electrical equivalent with identical voltage, current, power, and frequency specifications. Both parts use compatible SC-70/SOT-323 surface mount packages with identical pin configurations. No circuit modifications are required.

Q: What is the difference between the 2PA1576Q,135 and 2PA1576S,115?

A: Both parts are Nexperia automotive-grade alternatives with identical voltage, current, and frequency ratings. The primary difference is DC current gain: the 2PA1576Q,135 specifies 120 @ 1mA, 6V, while the 2PA1576S,115 specifies 270 @ 1mA, 6V. Selection depends on circuit bias requirements and gain tolerance specifications.

Q: Why does the 2SA1586-GR,LF have a lower operating temperature rating (125°C) than the KTA2014-GR-TP (150°C)?

A: The 2SA1586-GR,LF specifies a maximum junction temperature of 125°C, compared to 150°C for the KTA2014-GR-TP. This difference reflects manufacturer specifications and does not affect compatibility in applications operating within standard industrial temperature ranges. Verify application thermal requirements before selection.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are ROHS3 compliant with MSL rating of 1 (Unlimited), matching the original KTA2014-GR-TP specifications.

Q: What is the significance of the supplier device package designation (SOT-323 versus SC-70 versus UMT3)?

A: These designations refer to the physical package format used by different manufacturers. SOT-323, SC-70, and UMT3 are mechanically and electrically equivalent surface mount packages for this device class. All are compatible with standard pick-and-place assembly equipment and PCB footprints designed for three-lead transistor packages.

Q: Can the 2SA1576AT106R be used in new product designs?

A: The 2SA1576AT106R is classified as Not For New Designs. While it meets all electrical compatibility criteria and offers enhanced performance (140 MHz transition frequency, 200 mW power), Rohm Semiconductor recommends against its use in new designs. Use active alternatives such as the 2SA1586-GR,LF or Nexperia 2PA1576 series for new product development.

Q: What are the key electrical differences between the original KTA2014-GR-TP and the enhanced alternatives?

A: The Nexperia 2PA1576 series (2PA1576Q,135 and 2PA1576S,115) provide doubled power dissipation (200 mW versus 100 mW) and increased transition frequency (100 MHz versus 80 MHz). The Rohm 2SA1576AT106R offers the highest transition frequency (140 MHz). All alternatives maintain the 50V breakdown voltage and 150 mA collector current of the original part. Vce saturation characteristics differ slightly, with enhanced alternatives specifying 500mV @ 5mA, 50mA versus 300mV @ 10mA, 100mA for the original.

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