KST2907AMTF Equivalent & Substitute Parts

Part Overview

The KST2907AMTF is a PNP bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 600 mA maximum collector current in a surface mount SOT-23-3 package. This device is classified as obsolete product status. Equivalent and substitute parts are necessary to support ongoing production requirements, design updates, and supply chain continuity for applications utilizing this transistor topology.

Substiute Parts

KST2907AMTF
onsemiIn Stock: 163938KST2907AMTF Datasheet
KST2907AMTF
Current Part
MMBT2907ALT1G
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MMBT2907ALT1G
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SMMBT2907ALT3G
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BC856ALT1G
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BC856BLT1G
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BC856BLT3G
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BSR16
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MMBT2907ALT3G
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MMBTA55LT1G
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SBC856ALT1G
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SBC856BLT1G
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SBC856BLT3G
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SMMBT2907ALT1G
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BSR16,215
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CMPT2907A BK PBFREE
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MMBT2907A-7-F
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MMBT2907A-7-F
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MMBT2907A-G
Comchip TechnologyIn Stock: 4050MMBT2907A-G Datasheet
MMBT2907A-G
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MMBT2907A-TP
Micro Commercial CoIn Stock: 2269MMBT2907A-TP Datasheet
MMBT2907A-TP
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PMBT2907A,215
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BC856,215
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BC856A,215
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BC856A-7-F
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BC856A-TP
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BC856B,215
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BC856B,235
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BC856B-13-F
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BC856B-7-F
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BC856B-TP
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BC856BQ-7-F
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BCW68GR
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BCW68HE6327HTSA1
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BCW89,215
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DPBT8105-7
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FMMT722TA
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MMBT2907A-TP-HF
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MMBT2907ALT1HTSA1
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MMBT2907AQ-7-F
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PMBT2907,215
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PMBT2907,215
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PMBT2907A,235
Nexperia USA Inc.In Stock: 14921PMBT2907A,235 Datasheet
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SMBT2907AE6327HTSA1
Infineon TechnologiesIn Stock: 4171SMBT2907AE6327HTSA1 Datasheet
SMBT2907AE6327HTSA1
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CMPT2907A TR PBFREE
Central Semiconductor CorpIn Stock: 102007CMPT2907A TR PBFREE Datasheet
CMPT2907A TR PBFREE
Parametric Equivalent
CMPT2907AE TR PBFREE
Central Semiconductor CorpIn Stock: 25493CMPT2907AE TR PBFREE Datasheet
CMPT2907AE TR PBFREE
Parametric Equivalent

Key Parameters

Parameter Value
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 60 V
Current - Collector (Ic) (Max) 600 mA
Power - Max 350 mW
Frequency - Transition 200 MHz
Package / Case SOT-23-3 (TO-236-3, SC-59)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO)

Substitute Part Grouping Explanation

Substitute parts are classified into two categories based on electrical parameter compatibility with the KST2907AMTF:

Direct Substitutes maintain identical electrical specifications across all critical parameters: 60 V collector-emitter breakdown voltage, 600 mA maximum collector current, 200 MHz transition frequency, 1.6 V saturation voltage at specified bias conditions, and 100 minimum DC current gain. These parts differ only in product status (active versus obsolete) and packaging format (cut tape, digi-reel, or tape & reel). Direct substitutes include MMBT2907ALT1G, SMMBT2907ALT3G, and MMBT2907ALT3G.

Similar Substitutes share the same package footprint (SOT-23-3) and PNP transistor topology but operate within different electrical parameter ranges. These parts are suitable for applications where the specified electrical requirements can accommodate variations in collector current rating, transition frequency, or power dissipation. Similar substitutes include BC856ALT1G, BC856BLT1G, BC856BLT3G, BSR16, MMBTA55LT1G, SBC856ALT1G, SBC856BLT1G, and MMBT2907ALT3G.

Parameter Comparison

Part Number Manufacturer Product Status Ic (Max) Vce Breakdown (Max) Power (Max) Frequency hFE (Min) Package RoHS Status
KST2907AMTF onsemi Obsolete 600 mA 60 V 350 mW 200 MHz 100 @ 150mA, 10V SOT-23-3 Not Specified
MMBT2907ALT1G onsemi Active 600 mA 60 V 300 mW 200 MHz 100 @ 150mA, 10V SOT-23-3 ROHS3 Compliant
SMMBT2907ALT3G onsemi Active 600 mA 60 V 300 mW 200 MHz 100 @ 150mA, 10V SOT-23-3 ROHS3 Compliant
MMBT2907ALT3G onsemi Active 600 mA 60 V 300 mW 200 MHz 100 @ 150mA, 10V SOT-23-3 ROHS3 Compliant
BSR16 Fairchild Semiconductor Active 800 mA 60 V 350 mW 200 MHz 100 @ 150mA, 10V SOT-23-3 Not Specified
MMBTA55LT1G onsemi Active 500 mA 60 V 225 mW 50 MHz 100 @ 100mA, 1V SOT-23-3 ROHS3 Compliant
BC856ALT1G onsemi Active 100 mA 65 V 300 mW 100 MHz 125 @ 2mA, 5V SOT-23-3 ROHS3 Compliant
BC856BLT1G onsemi Active 100 mA 65 V 300 mW 100 MHz 220 @ 2mA, 5V SOT-23-3 ROHS3 Compliant
BC856BLT3G onsemi Active 100 mA 65 V 300 mW 100 MHz 220 @ 2mA, 5V SOT-23-3 ROHS3 Compliant
SBC856ALT1G onsemi Active 100 mA 65 V 300 mW 100 MHz 125 @ 2mA, 5V SOT-23-3 ROHS3 Compliant
SBC856BLT1G onsemi Active 100 mA 65 V 300 mW 100 MHz 220 @ 2mA, 5V SOT-23-3 ROHS3 Compliant

Engineering Selection Recommendations

Direct Substitution (Recommended for Pin-Compatible Replacement)

MMBT2907ALT1G, SMMBT2907ALT3G, and MMBT2907ALT3G are direct electrical equivalents to the KST2907AMTF. All three parts maintain identical collector current (600 mA), collector-emitter breakdown voltage (60 V), transition frequency (200 MHz), and DC current gain specifications. These parts are manufactured by onsemi and carry active product status with ROHS3 compliance certification. Selection between these three direct substitutes depends on packaging format requirements: MMBT2907ALT1G and MMBT2907ALT3G are supplied in cut tape and digi-reel formats, while SMMBT2907ALT3G is supplied in tape & reel format. The primary electrical difference is reduced maximum power dissipation (300 mW versus 350 mW), which is acceptable for most applications operating within the original design envelope.

Alternative Substitution (For Applications with Modified Requirements)

BSR16 (Fairchild Semiconductor) provides identical electrical performance to the KST2907AMTF with the exception of maximum collector current (800 mA versus 600 mA) and maintains the same 60 V breakdown voltage, 200 MHz transition frequency, and 350 mW power rating. This part is suitable for applications requiring higher current capability within the same voltage and frequency specifications.

MMBTA55LT1G (onsemi) operates at 60 V breakdown voltage with 500 mA collector current but features reduced transition frequency (50 MHz versus 200 MHz) and lower power dissipation (225 mW). This part is applicable to lower-frequency switching applications where the reduced bandwidth is acceptable.

BC856 series parts (BC856ALT1G, BC856BLT1G, BC856BLT3G, SBC856ALT1G, SBC856BLT1G) operate at higher breakdown voltage (65 V) but with significantly reduced collector current (100 mA) and transition frequency (100 MHz). These parts are suitable only for low-current signal amplification applications and are not recommended for direct replacement in circuits designed for 600 mA operation.

SBC856ALT1G and SBC856BLT1G carry automotive grade qualification (AEC-Q101), making them suitable for automotive applications requiring enhanced reliability standards.

Frequently Asked Questions (FAQ)

Q: Can MMBT2907ALT1G, SMMBT2907ALT3G, and MMBT2907ALT3G be used interchangeably with KST2907AMTF?

A: Yes. These three parts are direct electrical equivalents with identical collector current, breakdown voltage, transition frequency, and DC current gain specifications. The differences are packaging format (cut tape, digi-reel, or tape & reel) and maximum power dissipation (300 mW versus 350 mW). Selection depends on procurement and assembly requirements.

Q: What is the significance of the power dissipation difference between KST2907AMTF (350 mW) and MMBT2907ALT1G (300 mW)?

A: The 50 mW reduction in maximum power dissipation reflects thermal design differences but does not affect electrical functionality for applications operating within the original design specifications. Verify that circuit power dissipation does not exceed 300 mW when using MMBT2907ALT1G as a substitute.

Q: Is BSR16 a suitable replacement for KST2907AMTF?

A: BSR16 is electrically compatible for applications requiring up to 800 mA collector current. It maintains the same 60 V breakdown voltage, 200 MHz transition frequency, and 350 mW power rating. BSR16 is manufactured by Fairchild Semiconductor and carries active product status.

Q: Why are BC856 series parts listed as similar rather than direct substitutes?

A: BC856 series parts operate at reduced collector current (100 mA maximum) and transition frequency (100 MHz), making them unsuitable for circuits designed for 600 mA operation at 200 MHz. These parts are applicable only to low-current signal amplification applications.

Q: What is the difference between MMBT2907ALT1G and MMBT2907ALT3G?

A: Both parts are electrically identical. MMBT2907ALT1G is supplied in cut tape and digi-reel format, while MMBT2907ALT3G is supplied in cut tape and digi-reel format. Selection depends on assembly equipment compatibility and procurement preferences.

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts listed (MMBT2907ALT1G, SMMBT2907ALT3G, MMBT2907ALT3G, BC856 series, MMBTA55LT1G, and SBC856 series) carry ROHS3 compliance certification. The original KST2907AMTF does not specify RoHS status due to its obsolete classification.

Q: Can MMBTA55LT1G replace KST2907AMTF in high-frequency switching applications?

A: MMBTA55LT1G is not recommended for applications requiring 200 MHz transition frequency operation. This part is rated for 50 MHz maximum transition frequency and is suitable only for lower-frequency switching circuits.

Q: What is the advantage of SBC856ALT1G and SBC856BLT1G over standard BC856 parts?

A: SBC856ALT1G and SBC856BLT1G carry automotive grade qualification (AEC-Q101) certification, making them suitable for automotive applications requiring enhanced reliability and quality standards. Electrical specifications remain identical to non-automotive BC856 variants.

Q: Is package compatibility guaranteed between KST2907AMTF and all listed substitutes?

A: Yes. All listed substitute parts utilize the SOT-23-3 package (also designated TO-236-3 or SC-59), ensuring mechanical and electrical pin compatibility. Differences exist only in packaging format (cut tape, digi-reel, or tape & reel) for procurement and assembly purposes.

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