KSP56TA Equivalent & Substitute Parts

Part Overview

The KSP56TA is a PNP bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 500 mA maximum collector current. This device is packaged in a TO-92-3 through-hole configuration and is rated for 625 mW maximum power dissipation with a 50 MHz transition frequency. The KSP56TA is classified as obsolete, making identification of equivalent substitute parts necessary for ongoing design support and component procurement in legacy systems and new designs requiring compatible alternatives.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	500	mA
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max) @ Ib, Ic	250 mV @ 10 mA, 100 mA	—
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) Min @ Ic, Vce	50 @ 100 mA, 1 V	—
Power - Max	625	mW
Frequency - Transition	50	MHz
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—
Operating Temperature (Max)	150	°C

Substitute Part Grouping Explanation

Substitution of the KSP56TA is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Substitution Parameters:

Transistor polarity: PNP
Maximum collector current: 500 mA
Maximum collector-emitter breakdown voltage: 80 V
Saturation voltage: 250 mV @ 10 mA, 100 mA
Maximum collector cutoff current: 100 nA
Power dissipation rating: 625 mW
Transition frequency: 50 MHz
Package type: TO-92-3 through-hole configuration

The MPSA56-AP meets all electrical specifications and mechanical packaging requirements, establishing it as a direct functional equivalent. Both devices share identical maximum ratings for current, voltage, power, and frequency characteristics. The TO-92-3 package compatibility ensures mechanical interchangeability in through-hole applications.

Parameter Comparison

Parameter	KSP56TA (onsemi)	MPSA56-AP (Micro Commercial Co)	Match
Transistor Type	PNP	PNP	✓
Current - Collector (Ic) Max	500 mA	500 mA	✓
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	✓
Vce Saturation (Max) @ Ib, Ic	250 mV @ 10 mA, 100 mA	250 mV @ 10 mA, 100 mA	✓
Current - Collector Cutoff (Max)	100 nA	100 nA	✓
DC Current Gain (hFE) Min @ Ic, Vce	50 @ 100 mA, 1 V	100 @ 100 mA, 1 V	≥
Power - Max	625 mW	625 mW	✓
Frequency - Transition	50 MHz	50 MHz	✓
Mounting Type	Through Hole	Through Hole	✓
Package / Case	TO-92-3	TO-92-3	✓
Operating Temperature (Max)	150°C	150°C	✓
RoHS Status	Not specified	ROHS3 Compliant	—

Engineering Selection Recommendations

KSP56TA (onsemi): This part is classified as obsolete. Current inventory availability is 16,400 pieces. The device carries REACH Unaffected status and EAR99 export classification. Moisture sensitivity level is 1 (Unlimited). RoHS compliance status is not specified in the provided data.

MPSA56-AP (Micro Commercial Co): This substitute part is also classified as obsolete with 793 pieces in current inventory. The MPSA56-AP carries ROHS3 Compliant certification, REACH Unaffected status, and EAR99 export classification. Moisture sensitivity level is 1 (Unlimited). The MPSA56-AP demonstrates superior DC current gain (100 minimum versus 50 minimum), providing enhanced amplification characteristics while maintaining all other electrical and mechanical specifications.

For applications requiring RoHS3 compliance, the MPSA56-AP is the appropriate selection. For applications with no RoHS requirement, either part is electrically and mechanically equivalent. The higher DC current gain of the MPSA56-AP may provide design margin in current-limited applications.

Frequently Asked Questions (FAQ)

Q: Can the MPSA56-AP directly replace the KSP56TA in existing designs?

A: Yes. Both devices are PNP transistors with identical maximum ratings for collector current (500 mA), collector-emitter breakdown voltage (80 V), power dissipation (625 mW), and transition frequency (50 MHz). Both use TO-92-3 through-hole packaging. The MPSA56-AP has a higher minimum DC current gain (100 versus 50), which is a beneficial characteristic for substitution.

Q: What is the difference in DC current gain between these parts?

A: The KSP56TA specifies a minimum DC current gain (hFE) of 50 at 100 mA collector current and 1 V collector-emitter voltage. The MPSA56-AP specifies a minimum of 100 under the same conditions. Higher current gain means the MPSA56-AP requires less base current to achieve the same collector current, which may improve circuit performance in current-limited applications.

Q: Are there package compatibility concerns?

A: No. Both the KSP56TA and MPSA56-AP use the TO-92-3 package with formed leads. They are mechanically interchangeable in through-hole PCB applications without modification to board layouts or footprints.

Q: What is the significance of the RoHS3 compliance difference?

A: The MPSA56-AP carries explicit ROHS3 Compliant certification, while the KSP56TA does not specify RoHS status. For applications subject to RoHS3 regulatory requirements, the MPSA56-AP is the appropriate selection. Both parts carry REACH Unaffected status.

Q: Are both parts still in production?

A: No. Both the KSP56TA and MPSA56-AP are classified as obsolete. Current inventory is available from stock: 16,400 pieces for KSP56TA and 793 pieces for MPSA56-AP. Component selection should account for long-term availability constraints.

Q: What are the operating temperature ranges?

A: The KSP56TA specifies a maximum operating temperature of 150°C. The MPSA56-AP specifies an operating temperature range of −55°C to 150°C. Both devices support the same maximum temperature, with the MPSA56-AP providing explicit specification of the lower temperature limit.

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