KSP05TA Equivalent & Substitute Parts

Part Overview

The KSP05TA is an NPN bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 500 mA maximum collector current in a TO-92-3 through-hole package. This device is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	V
Current - Collector (Ic) (Max)	500	mA
Power - Max	625	mW
Frequency - Transition	100	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V	—
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA	—
Package / Case	TO-92-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the KSP05TA is determined by electrical and mechanical compatibility within the following criteria:

Mandatory Compatibility Parameters:

Transistor Type: NPN configuration required
Package / Case: TO-92-3 through-hole form factor required
Mounting Type: Through Hole required
Power Dissipation: Maximum 625 mW or greater
Collector-Emitter Breakdown Voltage: Equal to or greater than 60 V
Maximum Collector Current: Equal to or greater than 500 mA
Transition Frequency: Equal to or greater than 100 MHz

Acceptable Variation Parameters:

DC Current Gain (hFE): May exceed minimum specification
Vce Saturation: May be equal to or lower than specified maximum
Collector Cutoff Current: May be equal to or lower than specified maximum

The 2N5550TAR meets all mandatory compatibility parameters and exceeds several electrical specifications, making it a direct substitute for the KSP05TA in applications where the design envelope permits higher voltage and current ratings.

Parameter Comparison

Parameter	KSP05TA	2N5550TAR	Unit
Manufacturer	onsemi	onsemi	—
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	60	140	V
Current - Collector (Ic) (Max)	500	600	mA
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA	250mV @ 5mA, 50mA	—
Current - Collector Cutoff (Max)	100	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V	60 @ 10mA, 5V	—
Power - Max	625	625	mW
Frequency - Transition	100	300	MHz
Operating Temperature (TJ)	150	150	°C
Package / Case	TO-92-3	TO-92-3	—
Mounting Type	Through Hole	Through Hole	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The 2N5550TAR is a direct substitute for the KSP05TA based on the following engineering criteria:

Electrical Compatibility: The 2N5550TAR exceeds all minimum electrical requirements of the KSP05TA. The higher collector-emitter breakdown voltage (140 V versus 60 V) and increased maximum collector current (600 mA versus 500 mA) provide design margin in applications operating within the KSP05TA envelope. The transition frequency of 300 MHz exceeds the 100 MHz specification, supporting higher-frequency switching applications.

Package and Mounting Compatibility: Both devices utilize identical TO-92-3 through-hole packaging, ensuring mechanical and electrical pin compatibility without PCB redesign.

Regulatory and Compliance Status: Both the KSP05TA and 2N5550TAR are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Supply Chain Status: The 2N5550TAR maintains active product status with substantial inventory availability (47,300 pieces), whereas the KSP05TA is classified as obsolete. Selection of the 2N5550TAR ensures long-term supply continuity and reduces procurement risk.

Thermal Characteristics: Both devices share identical maximum junction temperature ratings (150°C), ensuring equivalent thermal performance in the application environment.

Frequently Asked Questions (FAQ)

Q: Can the 2N5550TAR directly replace the KSP05TA without circuit modification?

A: Yes. The 2N5550TAR is pin-compatible in the TO-92-3 package and exceeds all electrical specifications of the KSP05TA. No circuit modifications are required for applications operating within the original KSP05TA design envelope.

Q: What is the significance of the higher breakdown voltage in the 2N5550TAR?

A: The 2N5550TAR features a 140 V collector-emitter breakdown voltage compared to the KSP05TA's 60 V rating. This higher rating provides additional design margin and allows operation in higher-voltage applications. In circuits designed for 60 V operation, the higher rating does not negatively impact performance.

Q: Are there any thermal or power dissipation differences between these devices?

A: Both devices are rated for identical maximum power dissipation (625 mW) and maximum junction temperature (150°C). Thermal performance is equivalent.

Q: Why is the 2N5550TAR preferred over the obsolete KSP05TA?

A: The 2N5550TAR maintains active product status with high inventory availability, ensuring reliable long-term supply. The KSP05TA is classified as obsolete, presenting supply chain risk and potential procurement delays.

Q: Are there compliance or certification differences between the two devices?

A: No. Both devices are ROHS3 compliant and REACH unaffected, meeting identical environmental and regulatory standards.

Q: What is the impact of the higher transition frequency in the 2N5550TAR?

A: The 2N5550TAR's 300 MHz transition frequency exceeds the KSP05TA's 100 MHz specification. This higher frequency capability supports faster switching applications without degrading performance in lower-frequency designs.

Q: Can the 2N5550TAR be used in all applications originally designed for the KSP05TA?

A: Yes. The 2N5550TAR meets or exceeds all electrical and mechanical specifications of the KSP05TA. Applications designed within the KSP05TA's electrical envelope operate identically with the 2N5550TAR.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message