KSH41CTF Equivalent & Substitute Parts

Part Overview

The KSH41CTF is an NPN bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 6 A maximum collector current. This device is packaged in a TO-252-3 DPAK surface mount configuration and is designed for general-purpose switching and amplification applications requiring moderate power dissipation up to 1.75 W.

The KSH41CTF is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for production, repair, and redesign applications. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, power dissipation, and package configuration.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	6	A
Power - Max	1.75	W
Vce Saturation (Max) @ Ib, Ic	1.5V @ 600mA, 6A	V
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 3A, 4V	—
Frequency - Transition	3	MHz
Current - Collector Cutoff (Max)	50	µA
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Mounting Type	Surface Mount	—
Operating Temperature (Max)	150	°C (TJ)
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the KSH41CTF are classified into two categories based on electrical and mechanical compatibility:

Direct Parametric Equivalents: Parts that match all critical electrical parameters of the KSH41CTF, including 100 V breakdown voltage, 6 A maximum collector current, 1.75 W power rating, 3 MHz transition frequency, and identical saturation voltage characteristics. These parts are functionally interchangeable in the same circuit application and use the same TO-252-3 DPAK package.

Similar Functional Alternatives: Parts that share the same 100 V voltage rating and DPAK package but differ in collector current capacity, power dissipation, or transition frequency. These parts are suitable for applications where the KSH41CTF specifications exceed circuit requirements or where lower current ratings are acceptable.

Substitution eligibility is determined by the following parameters:

Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 100 V
Current - Collector (Ic) (Max): Must equal or exceed 6 A for direct equivalents; lower ratings acceptable for similar alternatives
Package / Case: Must be TO-252-3 DPAK
Mounting Type: Must be Surface Mount
Transistor Type: Must be NPN
RoHS Status: Must be ROHS3 Compliant

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) [A]	Vce Breakdown (Max) [V]	Power (Max) [W]	Vce Sat @ Ib, Ic	hFE (Min) @ Ic, Vce	Frequency [MHz]	Package	Packaging Type
KSH41CTF	onsemi	Obsolete	6	100	1.75	1.5V @ 600mA, 6A	15 @ 3A, 4V	3	TO-252-3 DPAK	—
MJD41CRLG	onsemi	Active	6	100	1.75	1.5V @ 600mA, 6A	15 @ 3A, 4V	3	TO-252-3 DPAK	Cut Tape (CT)
MJD41CT4G	onsemi	Active	6	100	1.75	1.5V @ 600mA, 6A	15 @ 3A, 4V	3	TO-252-3 DPAK	Tape & Reel (TR)
MJD31CG	onsemi	Active	3	100	1.56	1.2V @ 375mA, 3A	10 @ 3A, 4V	3	TO-252-3 DPAK	Tube
MJD31CRLG	onsemi	Active	3	100	1.56	1.2V @ 375mA, 3A	10 @ 3A, 4V	3	TO-252-3 DPAK	Cut Tape (CT) & Digi-Reel®
MJD31CT4G	onsemi	Active	3	100	1.56	1.2V @ 375mA, 3A	10 @ 3A, 4V	3	TO-252-3 DPAK	Cut Tape (CT) & Digi-Reel®
MJD31C-13	Diodes Incorporated	Active	3	100	1.56	1.2V @ 375mA, 3A	10 @ 3A, 4V	3	TO-252-3 DPAK	Tape & Reel (TR)
2SC4134T-TL-E	onsemi	Active	1	100	0.8	400mV @ 40mA, 400mA	200 @ 100mA, 5V	120	TO-252-3 DPAK	—
2SC4135S-TL-E	onsemi	Obsolete	2	100	1	400mV @ 100mA, 1A	140 @ 100mA, 5V	120	TO-252-3 DPAK	Cut Tape (CT)
2SC4135T-TL-E	onsemi	Active	2	100	1	400mV @ 100mA, 1A	200 @ 100mA, 5V	120	TO-252-3 DPAK	Tape & Reel (TR)
MJD122-TP	Micro Commercial Co	Active	8	100	1.5	4V @ 80mA, 8A	1000 @ 4A, 4V	—	TO-252-3 DPAK	Tape & Reel (TR)

Engineering Selection Recommendations

Direct Parametric Equivalents (Recommended Primary Substitutes):

MJD41CRLG and MJD41CT4G are direct parametric equivalents to the KSH41CTF. Both parts are manufactured by onsemi, maintain active product status, and provide identical electrical specifications including 6 A collector current, 100 V breakdown voltage, 1.75 W power rating, and 3 MHz transition frequency. The primary difference between these two parts is packaging format: MJD41CRLG is supplied in Cut Tape (CT) format, while MJD41CT4G is supplied in Tape & Reel (TR) format. Both parts are ROHS3 compliant and carry MSL 1 rating. Selection between these two should be based on procurement and assembly requirements.

Similar Functional Alternatives (Secondary Substitutes):

MJD31CG, MJD31CRLG, and MJD31CT4G are onsemi-manufactured NPN transistors with 100 V breakdown voltage and 3 MHz transition frequency in TO-252-3 DPAK packaging. These parts are rated for 3 A maximum collector current and 1.56 W power dissipation, representing a 50% reduction in current capacity compared to the KSH41CTF. These alternatives are suitable for applications where circuit requirements do not demand the full 6 A current rating of the KSH41CTF. All three variants are active products with ROHS3 compliance.

MJD31C-13, manufactured by Diodes Incorporated, provides equivalent electrical specifications to the MJD31 series with 3 A collector current and 100 V breakdown voltage in TO-252-3 DPAK packaging. This part is active and ROHS3 compliant, offering cross-manufacturer availability.

2SC4135T-TL-E is an onsemi-manufactured NPN transistor with 100 V breakdown voltage, 2 A collector current, and 120 MHz transition frequency. This part is active and ROHS3 compliant. The higher transition frequency and lower current rating make this part suitable for higher-frequency switching applications where the 6 A rating of the KSH41CTF is not required.

2SC4134T-TL-E is an onsemi-manufactured NPN transistor with 100 V breakdown voltage, 1 A collector current, and 120 MHz transition frequency. This part is active and ROHS3 compliant. The significantly reduced current capacity limits this part to low-current applications.

Not Recommended:

MJD122-TP is a Darlington transistor configuration with 8 A collector current and 100 V breakdown voltage. Although the current rating exceeds the KSH41CTF specification, the Darlington configuration produces significantly higher saturation voltage (4 V versus 1.5 V) and exhibits different gain characteristics (hFE 1000 versus 15). This part is not suitable as a direct substitute due to fundamental differences in transistor topology and switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can MJD41CRLG or MJD41CT4G be used as direct replacements for KSH41CTF?

A: Yes. MJD41CRLG and MJD41CT4G are direct parametric equivalents with identical electrical specifications. Both parts maintain 6 A collector current, 100 V breakdown voltage, 1.75 W power rating, and 3 MHz transition frequency. The only difference is packaging format (Cut Tape versus Tape & Reel). Both are ROHS3 compliant and carry MSL 1 rating.

Q: What is the difference between MJD41CRLG and MJD41CT4G?

A: Both parts are electrically identical. MJD41CRLG is supplied in Cut Tape (CT) format, while MJD41CT4G is supplied in Tape & Reel (TR) format. Selection depends on assembly equipment compatibility and procurement preferences.

Q: Can MJD31 series parts substitute for KSH41CTF?

A: MJD31 series parts (MJD31CG, MJD31CRLG, MJD31CT4G, and MJD31C-13) are suitable substitutes only when circuit requirements do not exceed 3 A collector current. These parts maintain the same 100 V breakdown voltage and 3 MHz transition frequency but provide half the current capacity and slightly lower power dissipation (1.56 W versus 1.75 W). Substitution is valid only if the application does not require the full 6 A rating.

Q: Why is MJD122-TP not recommended as a substitute?

A: MJD122-TP is a Darlington transistor configuration, fundamentally different from the standard NPN topology of the KSH41CTF. Darlington transistors exhibit significantly higher saturation voltage (4 V versus 1.5 V) and much higher current gain (hFE 1000 versus 15). These differences alter circuit behavior and switching characteristics, making this part unsuitable as a direct substitute.

Q: What is the significance of the 100 V breakdown voltage rating?

A: The 100 V collector-emitter breakdown voltage (VCEO) specifies the maximum voltage that can be applied between the collector and emitter terminals without device failure. All substitute parts listed maintain this 100 V rating, ensuring compatibility with circuits designed for the KSH41CTF. Parts with lower voltage ratings cannot be substituted.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental compliance profile of the KSH41CTF.

Q: What does MSL 1 (Unlimited) mean?

A: MSL 1 (Moisture Sensitivity Level 1) indicates that the component has unlimited shelf life and does not require special moisture control during storage or handling. No baking or desiccant storage is required prior to assembly.

Q: Can 2SC4135T-TL-E substitute for KSH41CTF in all applications?

A: 2SC4135T-TL-E is suitable only for applications where collector current does not exceed 2 A. This part provides 100 V breakdown voltage and higher transition frequency (120 MHz versus 3 MHz), making it appropriate for higher-frequency switching circuits with lower current requirements. It is not suitable for applications requiring the full 6 A rating of the KSH41CTF.

Q: What packaging options are available for direct equivalents?

A: Direct equivalents MJD41CRLG and MJD41CT4G are available in Cut Tape (CT) and Tape & Reel (TR) formats respectively. Both use the same TO-252-3 DPAK surface mount package. Selection between these formats depends on assembly equipment and procurement requirements.

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