KSH32CTF Equivalent & Substitute Parts

Part Overview

The KSH32CTF is a PNP bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 3 A maximum collector current. The device is packaged in a Surface Mount DPAK (TO-252-3) configuration with a maximum power dissipation of 1.56 W and transition frequency of 3 MHz. The KSH32CTF is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity.

Substiute Parts

KSH32CTF
onsemiIn Stock: 1931KSH32CTF Datasheet
KSH32CTF
Current Part
MJD32CT4G
onsemiIn Stock: 37220MJD32CT4G Datasheet
MJD32CT4G
Direct
NJVMJD32CG
onsemiIn Stock: 7969NJVMJD32CG Datasheet
NJVMJD32CG
Direct
2SA1593S-TL-E
onsemiIn Stock: 22602SA1593S-TL-E Datasheet
2SA1593S-TL-E
Similar
2SB1215S-TL-E
onsemiIn Stock: 54352SB1215S-TL-E Datasheet
2SB1215S-TL-E
Similar
2SB1216S-TL-E
onsemiIn Stock: 41412SB1216S-TL-E Datasheet
2SB1216S-TL-E
Similar
2SB1216T-TL-E
onsemiIn Stock: 93472SB1216T-TL-E Datasheet
2SB1216T-TL-E
Similar
2SD1815T-TL-E
onsemiIn Stock: 56402SD1815T-TL-E Datasheet
2SD1815T-TL-E
Similar
MJD32CRLG
onsemiIn Stock: 3100MJD32CRLG Datasheet
MJD32CRLG
Parametric Equivalent
MJD32C-TP
Micro Commercial CoIn Stock: 1040MJD32C-TP Datasheet
MJD32C-TP
Direct
MJD32CQ-13
Diodes IncorporatedIn Stock: 30426MJD32CQ-13 Datasheet
MJD32CQ-13
Direct
MJD32CT4
STMicroelectronicsIn Stock: 44913MJD32CT4 Datasheet
MJD32CT4
Direct
MJD32CT4-A
STMicroelectronicsIn Stock: 16042MJD32CT4-A Datasheet
MJD32CT4-A
Direct

Key Parameters

Parameter Value Unit
Transistor Type PNP
Collector Current (Max) 3 A
Collector-Emitter Breakdown Voltage (Max) 100 V
Vce Saturation (Max) 1.2 V @ 375mA, 3A
Collector Cutoff Current (Max) 50 µA
DC Current Gain (hFE Min) 10 @ 3A, 4V
Power Dissipation (Max) 1.56 W
Transition Frequency 3 MHz
Operating Temperature (Max) 150 °C (TJ)
Package Type TO-252-3, DPAK Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the KSH32CTF is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • Transistor type (PNP)
  • Collector current rating (3 A minimum)
  • Collector-emitter breakdown voltage (100 V minimum)
  • Vce saturation characteristics (1.2 V @ 375mA, 3A)
  • Collector cutoff current (50 µA maximum)
  • DC current gain (hFE minimum 10 @ 3A, 4V)
  • Power dissipation (1.56 W minimum)
  • Transition frequency (3 MHz minimum)
  • Package type (TO-252-3, DPAK Surface Mount)

Substitute parts are classified into two categories:

Direct Equivalents: Parts that match all electrical parameters and package specifications of the KSH32CTF, differing only in manufacturer, product status, or packaging format (tape & reel, cut tape, tube).

Parametric Equivalents: Parts that meet or exceed all critical electrical parameters and package requirements but may have enhanced specifications (higher power rating, extended temperature range, improved cutoff current characteristics) or different packaging options.

Parameter Comparison

Part Number Manufacturer Status Ic (Max) A Vce(br) V Vce Sat V hFE Min Power W Freq MHz Temp °C Package
KSH32CTF onsemi Obsolete 3 100 1.2 @ 375mA, 3A 10 @ 3A, 4V 1.56 3 150 DPAK
MJD32CT4G onsemi Active 3 100 1.2 @ 375mA, 3A 10 @ 3A, 4V 1.56 3 -65 to 150 DPAK
NJVMJD32CG onsemi Active 3 100 1.2 @ 375mA, 3A 10 @ 3A, 4V 1.56 3 -65 to 150 DPAK
MJD32CRLG onsemi Active 3 100 1.2 @ 375mA, 3A 10 @ 3A, 4V 1.56 3 -65 to 150 DPAK
MJD32C-TP Micro Commercial Co Active 3 100 1.2 @ 375mA, 3A 10 @ 3A, 4V 1.25 3 150 DPAK
MJD32CQ-13 Diodes Incorporated Active 3 100 1.2 @ 375mA, 3A 10 @ 3A, 4V 15 3 -55 to 150 TO-252-3
2SA1593S-TL-E onsemi Active 2 100 600mV @ 100mA, 1A 140 @ 100mA, 5V 1 120 150 TP-FA
2SB1215S-TL-E onsemi Active 3 100 500mV @ 150mA, 1.5A 140 @ 500mA, 5V 1 130 150 TP-FA
2SB1216S-TL-E onsemi Obsolete 4 100 500mV @ 200mA, 2A 140 @ 500mA, 5V 1 130 150 TP-FA
2SB1216T-TL-E onsemi Active 4 100 500mV @ 200mA, 2A 200 @ 500mA, 5V 1 130 150 TP-FA

Engineering Selection Recommendations

Direct Replacement (Highest Compatibility):

For applications requiring direct functional replacement of the obsolete KSH32CTF, the following active parts are recommended based on electrical parameter equivalence and product status:

  • MJD32CT4G (onsemi): Identical electrical specifications with extended operating temperature range (-65°C to 150°C). Available in Cut Tape & Digi-Reel packaging. Product status: Active. Inventory: 37,200 units.

  • NJVMJD32CG (onsemi): Identical electrical specifications with extended operating temperature range (-65°C to 150°C). Available in Tube packaging. Product status: Active. Inventory: 7,900 units.

  • MJD32CRLG (onsemi): Identical electrical specifications with extended operating temperature range (-65°C to 150°C). Available in Cut Tape & Digi-Reel packaging. Product status: Active. Inventory: 3,014 units.

Alternative Replacement (Parameter-Compliant):

  • MJD32C-TP (Micro Commercial Co): Meets all critical electrical parameters. Power dissipation rated at 1.25 W (below KSH32CTF 1.56 W). Operating temperature limited to 150°C maximum. Product status: Active. Inventory: 981 units.

  • MJD32CQ-13 (Diodes Incorporated): Exceeds electrical specifications with 15 W power dissipation and extended temperature range (-55°C to 150°C). Improved collector cutoff current (1 µA vs. 50 µA). Product status: Active. Inventory: 30,400 units.

Functional Alternatives (Enhanced Specifications):

  • 2SB1215S-TL-E (onsemi): Matches 3 A collector current and 100 V breakdown voltage. Enhanced transition frequency (130 MHz vs. 3 MHz) and DC current gain (140 vs. 10). Different package type (TP-FA). Product status: Active. Inventory: 5,400 units.

  • 2SB1216T-TL-E (onsemi): Supports 4 A collector current with 100 V breakdown voltage. Enhanced transition frequency (130 MHz) and DC current gain (200). Different package type (TP-FA). Product status: Active. Inventory: 9,300 units.

All recommended parts maintain RoHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status consistent with the KSH32CTF.

Frequently Asked Questions (FAQ)

Q: Can MJD32CT4G be used as a direct replacement for KSH32CTF?

A: Yes. MJD32CT4G is electrically equivalent to KSH32CTF across all critical parameters: 3 A collector current, 100 V breakdown voltage, 1.2 V Vce saturation, 10 hFE minimum, 1.56 W power dissipation, and 3 MHz transition frequency. The primary difference is product status (Active vs. Obsolete) and extended operating temperature range (-65°C to 150°C vs. 150°C maximum). Both use identical DPAK packaging.

Q: What is the difference between NJVMJD32CG and MJD32CT4G?

A: Both parts are electrically identical to KSH32CTF. The primary difference is packaging format: NJVMJD32CG is supplied in Tube packaging, while MJD32CT4G is supplied in Cut Tape & Digi-Reel format. Selection depends on procurement and assembly requirements.

Q: Can MJD32C-TP be used instead of KSH32CTF?

A: MJD32C-TP meets all critical electrical parameters and is electrically compatible. However, power dissipation is rated at 1.25 W compared to KSH32CTF's 1.56 W. In applications approaching maximum power dissipation limits, thermal performance may differ. Operating temperature is limited to 150°C maximum (no extended low-temperature range). Verify thermal requirements before substitution.

Q: Why does MJD32CQ-13 have a 15 W power rating when KSH32CTF is 1.56 W?

A: MJD32CQ-13 is manufactured by Diodes Incorporated and features enhanced thermal characteristics and package design, resulting in higher power dissipation capability. All other electrical parameters (collector current, breakdown voltage, saturation voltage, current gain, frequency) remain equivalent. The higher power rating provides additional thermal margin in applications with sustained power dissipation.

Q: Are 2SB1215S-TL-E and 2SB1216T-TL-E suitable replacements for KSH32CTF?

A: These parts are functionally compatible but not direct equivalents. Both support the required 100 V breakdown voltage and 3 A (2SB1215S-TL-E) or 4 A (2SB1216T-TL-E) collector current. However, they feature significantly enhanced transition frequency (130 MHz vs. 3 MHz) and DC current gain (140–200 vs. 10). Package type differs (TP-FA vs. DPAK). Use these parts only when enhanced frequency response is acceptable or beneficial to circuit design.

Q: What packaging options are available for KSH32CTF equivalents?

A: Equivalent parts are available in three packaging formats: DPAK (TO-252-3) in Cut Tape & Digi-Reel, Tube, and Tape & Reel formats. MJD32CT4G, NJVMJD32CG, and MJD32CRLG all use DPAK packaging. Alternative parts 2SA1593S-TL-E, 2SB1215S-TL-E, 2SB1216S-TL-E, and 2SB1216T-TL-E use TP-FA packaging. Verify PCB footprint compatibility before selection.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts maintain RoHS3 compliance, MSL Level 1 (Unlimited moisture sensitivity), and REACH Unaffected status, consistent with KSH32CTF environmental and regulatory requirements.

Q: Which substitute part has the highest inventory availability?

A: MJD32CQ-13 (Diodes Incorporated) has the highest inventory with 30,400 units in stock. MJD32CT4G (onsemi) has 37,200 units available. Both parts are suitable for high-volume procurement requirements.

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