KSH117ITU Equivalent & Substitute Parts

Part Overview

The KSH117ITU is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current. This device is packaged in the I-PAK (TO-251-3) form factor and is designed for through-hole mounting applications requiring moderate power dissipation up to 1.75 W.

The KSH117ITU is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to support ongoing maintenance, repair, and redesign activities for legacy systems and applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Darlington	—
Current - Collector (Ic) (Max)	2	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A	—
Current - Collector Cutoff (Max)	20	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	—
Power - Max	1.75	W
Frequency - Transition	25	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	—

Substitute Part Grouping Explanation

Substitution of the KSH117ITU is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Substitution Parameters:

Transistor Type: PNP - Darlington configuration
Maximum Collector Current (Ic): 2 A
Maximum Collector-Emitter Breakdown Voltage: 100 V
DC Current Gain (hFE): Minimum 1000
Package Type: Through-hole mounting

Substitute Parts Identified:

TIP117G — Functional equivalent with different package form factor (TO-220-3 instead of I-PAK). Electrical specifications match across collector current, breakdown voltage, and current gain. Product status is Active, providing improved availability. Transition frequency specification is not provided for this variant.
MJD117-1G — Parametric equivalent with identical I-PAK package form factor. Electrical specifications are fully matched to the KSH117ITU across all provided parameters, including transition frequency (25 MHz) and operating temperature range. Product status is Obsolete, matching the original part classification.

Parameter Comparison

Parameter	KSH117ITU	TIP117G	MJD117-1G
Manufacturer	onsemi	onsemi	onsemi
Transistor Type	PNP - Darlington	PNP - Darlington	PNP - Darlington
Current - Collector (Ic) (Max)	2 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A	2.5V @ 8mA, 2A	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	20 µA	2 mA	20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	1000 @ 1A, 4V	1000 @ 2A, 3V
Power - Max	1.75 W	2 W	1.75 W
Frequency - Transition	25 MHz	Not specified	25 MHz
Operating Temperature (TJ)	150°C	-65°C ~ 150°C	-65°C ~ 150°C
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-220-3	TO-251-3 Short Leads, IPak, TO-251AA
Product Status	Obsolete	Active	Obsolete
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

MJD117-1G is the primary parametric equivalent for direct replacement of the KSH117ITU. Both devices share identical I-PAK packaging, matching electrical specifications across collector current, breakdown voltage, current gain, transition frequency, and saturation characteristics. The MJD117-1G provides ROHS3 compliance certification and maintains the same operating temperature maximum of 150°C. Both parts are classified as obsolete, reflecting their legacy status in the component market.

TIP117G serves as a functional equivalent when package form factor substitution is acceptable. This part is manufactured by onsemi and maintains electrical equivalence across maximum collector current (2 A), breakdown voltage (100 V), and DC current gain (1000 minimum). The TIP117G is classified as an Active product, providing superior long-term availability compared to obsolete alternatives. The primary design consideration for TIP117G substitution is the transition from I-PAK to TO-220-3 packaging, which affects board layout, thermal management, and mechanical mounting requirements. The TIP117G provides an extended operating temperature range (-65°C to 150°C) and ROHS3 compliance.

Selection between MJD117-1G and TIP117G depends on packaging constraints and availability requirements. For applications where the I-PAK form factor is mandatory, MJD117-1G is the appropriate choice. For applications where TO-220-3 packaging is acceptable or preferred, TIP117G offers the advantage of active product status and improved component availability.

Frequently Asked Questions (FAQ)

Q: Can the TIP117G replace the KSH117ITU in all applications?

A: The TIP117G is electrically equivalent to the KSH117ITU across all critical parameters: 2 A collector current, 100 V breakdown voltage, and 1000 minimum DC current gain. However, the TIP117G uses TO-220-3 packaging instead of I-PAK. Substitution is possible only if the application circuit board layout, thermal management design, and mechanical mounting can accommodate the larger TO-220-3 package footprint.

Q: What is the difference between the MJD117-1G and KSH117ITU?

A: The MJD117-1G and KSH117ITU are parametric equivalents. Both devices are PNP Darlington transistors with identical electrical specifications: 2 A maximum collector current, 100 V breakdown voltage, 1000 minimum DC current gain, 25 MHz transition frequency, and 1.75 W maximum power dissipation. Both use I-PAK packaging. The primary difference is product status: KSH117ITU is obsolete, while MJD117-1G is also obsolete but maintains higher inventory availability (16,590 pieces versus 887 pieces).

Q: Are there compliance differences between these substitute parts?

A: The TIP117G and MJD117-1G both carry ROHS3 compliance certification. The KSH117ITU does not specify RoHS status in the provided data. All three parts are REACH Unaffected and carry EAR99 ECCN classification. Moisture sensitivity level is 1 (Unlimited) for both the KSH117ITU and MJD117-1G.

Q: What is the operating temperature range for each part?

A: The KSH117ITU specifies a maximum junction temperature of 150°C without a minimum temperature specification. The TIP117G and MJD117-1G both specify an operating temperature range of -65°C to 150°C (TJ). For applications requiring operation below 0°C, the TIP117G and MJD117-1G provide documented low-temperature performance.

Q: How do the saturation characteristics compare?

A: The KSH117ITU and MJD117-1G specify identical saturation voltage: 3V maximum at 40 mA base current and 4 A collector current. The TIP117G specifies a lower saturation voltage of 2.5V maximum, but at different test conditions (8 mA base current and 2 A collector current). These differences reflect different measurement conditions rather than fundamental performance differences at equivalent operating points.

Q: Which substitute part should I select for new designs?

A: For new designs, the TIP117G is recommended due to its Active product status, which ensures long-term availability and continued manufacturing support. The TO-220-3 package is widely used in modern applications and provides superior thermal performance compared to I-PAK. If I-PAK packaging is a design requirement, the MJD117-1G is the appropriate selection, though both the KSH117ITU and MJD117-1G are classified as obsolete products.

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