KSH112TF Equivalent & Substitute Parts

Part Overview

The KSH112TF is an NPN Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current. The device is housed in a TO-252-3 DPAK surface mount package and is designed for general-purpose switching and amplification applications requiring moderate power dissipation.

The KSH112TF carries an obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Collector Current (Max)	2	A
Collector-Emitter Breakdown Voltage (Max)	100	V
Vce Saturation (Max)	3	V @ 40mA, 4A
Collector Cutoff Current (Max)	20	µA
DC Current Gain (hFE Min)	1000	@ 2A, 3V
Transition Frequency	25	MHz
Power Dissipation (Max)	1.75	W
Operating Temperature (Max)	150	°C (TJ)
Package Type	TO-252-3, DPAK	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the KSH112TF is determined by electrical and mechanical parameter compatibility within the NPN Darlington transistor category. The critical parameters governing substitution are:

Electrical Parameters:

Collector current rating: 2 A (maximum)
Collector-emitter breakdown voltage: 100 V (maximum)
DC current gain (hFE): minimum 1000 @ 2A, 3V
Vce saturation: 3 V @ 40mA, 4A
Collector cutoff current: 20 µA (maximum)
Transition frequency: 25 MHz

Mechanical Parameters:

Package: TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting: Surface Mount

Substitute parts are classified into two categories:

Direct Substitutes: Parts meeting all electrical specifications and package requirements with identical or superior performance characteristics and active product status.

Parametric Equivalents: Parts meeting core electrical specifications but with variations in power dissipation rating, packaging format, or product status that require design verification for specific applications.

Parameter Comparison

Part Number	Manufacturer	Ic (Max)	Vce(BR)	Vce Sat	hFE (Min)	Power (Max)	Freq	Temp (Max)	Status	Package
KSH112TF	onsemi	2 A	100 V	3 V @ 40mA, 4A	1000 @ 2A, 3V	1.75 W	25 MHz	150°C	Obsolete	DPAK
MJD112T4G	onsemi	2 A	100 V	3 V @ 40mA, 4A	1000 @ 2A, 3V	20 W	25 MHz	150°C	Active	DPAK
NJVMJD112G	onsemi	2 A	100 V	3 V @ 40mA, 4A	1000 @ 2A, 3V	1.75 W	25 MHz	150°C	Active	DPAK
NJVMJD112T4G	onsemi	2 A	100 V	3 V @ 40mA, 4A	1000 @ 2A, 3V	20 W	25 MHz	150°C	Active	DPAK
MJD112RLG	onsemi	2 A	100 V	3 V @ 40mA, 4A	1000 @ 2A, 3V	1.75 W	25 MHz	150°C	Active	DPAK
MJD112T4	STMicroelectronics	2 A	100 V	3 V @ 40mA, 4A	1000 @ 2A, 3V	20 W	25 MHz	150°C	Active	DPAK
2SD1980TL	Rohm Semiconductor	2 A	100 V	1.5 V @ 1mA, 1A	1000 @ 1A, 2V	10 W	—	150°C	Not For New Designs	DPAK

Engineering Selection Recommendations

Primary Substitutes (Direct Replacement):

NJVMJD112G and MJD112RLG are recommended as primary substitutes for the obsolete KSH112TF. Both parts are manufactured by onsemi, carry active product status, and meet all electrical specifications of the original component. NJVMJD112G is supplied in tube packaging, while MJD112RLG is supplied in cut tape format. Both maintain the 1.75 W power dissipation rating and are RoHS3 compliant.

Alternative Substitutes (Enhanced Performance):

MJD112T4G (onsemi) and NJVMJD112T4G (onsemi) provide identical electrical specifications with increased power dissipation capability (20 W versus 1.75 W). These parts are suitable for applications where thermal margin is beneficial. MJD112T4G is supplied in cut tape and digi-reel format, while NJVMJD112T4G is supplied in tape and reel format. Both carry active product status and RoHS3 compliance.

MJD112T4 (STMicroelectronics) is a cross-manufacturer equivalent with active product status, identical electrical specifications, and 20 W power rating. This part is supplied in cut tape and digi-reel format and carries RoHS3 compliance.

Limited Substitution (Parametric Equivalent):

2SD1980TL (Rohm Semiconductor) meets core electrical specifications for collector current, breakdown voltage, and current gain. However, this part carries "Not For New Designs" status and exhibits different saturation voltage characteristics (1.5 V @ 1mA, 1A versus 3 V @ 40mA, 4A). Use of this part is limited to legacy system maintenance where design modification is not feasible.

All substitute parts maintain surface mount DPAK packaging compatibility and operate within the 150°C maximum junction temperature specification.

Frequently Asked Questions (FAQ)

Q: Can NJVMJD112G directly replace KSH112TF without circuit modification?

A: Yes. NJVMJD112G meets all electrical specifications of KSH112TF, including collector current (2 A), breakdown voltage (100 V), saturation voltage (3 V @ 40mA, 4A), current gain (1000 @ 2A, 3V), and power dissipation (1.75 W). The part is housed in identical DPAK packaging and operates within the same temperature range. No circuit modification is required.

Q: What is the difference between MJD112T4G and NJVMJD112T4G?

A: Both parts are manufactured by onsemi and meet identical electrical specifications. The primary difference is packaging format: MJD112T4G is supplied in cut tape and digi-reel format, while NJVMJD112T4G is supplied in tape and reel format. Selection between these parts depends on assembly equipment compatibility and procurement requirements.

Q: Why does MJD112T4 have a 20 W power rating while KSH112TF has 1.75 W?

A: Power dissipation rating reflects the thermal design of the device package. MJD112T4 incorporates enhanced thermal characteristics within the same DPAK package footprint, allowing higher power dissipation. Electrical specifications remain identical. Applications limited to 1.75 W dissipation can use MJD112T4 without derating; applications requiring higher power capability benefit from the increased thermal margin.

Q: Is 2SD1980TL suitable as a replacement for KSH112TF?

A: 2SD1980TL meets the core electrical specifications for collector current and breakdown voltage. However, saturation voltage characteristics differ (1.5 V @ 1mA, 1A versus 3 V @ 40mA, 4A), and the part carries "Not For New Designs" status. Use of this part is limited to legacy system maintenance where design modification is not feasible. For new designs or production transitions, primary or alternative substitutes are preferred.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed carry RoHS3 compliance except where noted. The KSH112TF original part does not specify RoHS status. All active-status substitutes (NJVMJD112G, MJD112RLG, MJD112T4G, NJVMJD112T4G, MJD112T4) are RoHS3 compliant. 2SD1980TL is RoHS3 compliant but carries "Not For New Designs" status.

Q: What packaging formats are available for substitute parts?

A: Substitute parts are available in multiple packaging formats: cut tape and digi-reel (MJD112T4G, MJD112RLG, MJD112T4, 2SD1980TL), tube (NJVMJD112G), and tape and reel (NJVMJD112T4G). Selection depends on assembly process requirements and procurement volume. All parts maintain identical DPAK surface mount package footprint.

Q: Can MJD112T4 (STMicroelectronics) be used interchangeably with onsemi equivalents?

A: Yes. MJD112T4 meets all electrical specifications of the KSH112TF and onsemi substitutes. Cross-manufacturer substitution is valid based on parametric equivalence. However, supply chain, lead time, and cost considerations may influence selection between onsemi and STMicroelectronics sources.

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