KSH112GTM Equivalent & Substitute Parts

Part Overview

The KSH112GTM is an NPN Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 2 A maximum collector current in a surface mount DPAK package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. The part delivers 1.75 W maximum power dissipation with a 25 MHz transition frequency and is suitable for switching and amplification circuits requiring Darlington configuration performance.

Substiute Parts

KSH112GTM
onsemiIn Stock: 1020KSH112GTM Datasheet
KSH112GTM
Current Part
NJVMJD112G
onsemiIn Stock: 896NJVMJD112G Datasheet
NJVMJD112G
Direct
NJVMJD112T4G
onsemiIn Stock: 20219NJVMJD112T4G Datasheet
NJVMJD112T4G
Direct
MJD112RLG
onsemiIn Stock: 727MJD112RLG Datasheet
MJD112RLG
Parametric Equivalent
MJD112T4
STMicroelectronicsIn Stock: 25943MJD112T4 Datasheet
MJD112T4
Direct
2SD1980TL
Rohm SemiconductorIn Stock: 40952SD1980TL Datasheet
2SD1980TL
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 1.75 W
Frequency - Transition 25 MHz
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Operating Temperature (Max) 150 °C (TJ)

Substitute Part Grouping Explanation

Substitution of the KSH112GTM is determined by electrical and mechanical parameter alignment within the NPN Darlington transistor category. The critical parameters governing substitution are:

Electrical Parameters:

  • Collector current rating: 2 A maximum
  • Collector-emitter breakdown voltage: 100 V
  • DC current gain (hFE): minimum 1000 @ 2A, 3V
  • Vce saturation characteristics: 3V @ 40mA, 4A
  • Collector cutoff current: 20 µA maximum
  • Transition frequency: 25 MHz

Mechanical Parameters:

  • Package type: TO-252-3 DPAK (2 Leads + Tab), SC-63
  • Mounting: Surface Mount

Substitute parts are grouped into three categories based on their relationship to the main part:

Direct Manufacturer Substitutes (onsemi): NJVMJD112G and NJVMJD112T4G maintain identical electrical specifications and DPAK packaging. These parts differ in packaging format (Tube vs. Tape & Reel) and product status (Active vs. Obsolete).

Parametric Equivalent (onsemi): MJD112RLG provides electrical equivalence with identical core parameters and DPAK packaging, available in Cut Tape format with Active product status.

Cross-Manufacturer Equivalent (STMicroelectronics): MJD112T4 delivers electrical equivalence from an alternative manufacturer with Active product status and enhanced power rating (20 W vs. 1.75 W).

Similar Alternative (Rohm Semiconductor): 2SD1980TL operates within the same voltage and current envelope but features different saturation characteristics, lower transition frequency specification, and CPT3 package variant. This part is classified as Not For New Designs.

Parameter Comparison

Parameter KSH112GTM NJVMJD112G NJVMJD112T4G MJD112RLG MJD112T4 2SD1980TL
Manufacturer onsemi onsemi onsemi onsemi STMicroelectronics Rohm Semiconductor
Product Status Obsolete Active Active Active Active Not For New Designs
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Ic (Max) 2 A 2 A 2 A 2 A 2 A 2 A
Vce Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V
Vce Saturation @ Ib, Ic 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A 3V @ 40mA, 4A 1.5V @ 1mA, 1A
Icbo (Max) 20 µA 20 µA 20 µA 20 µA 20 µA 10 µA
hFE (Min) @ Ic, Vce 1000 @ 2A, 3V 1000 @ 2A, 3V 1000 @ 2A, 3V 1000 @ 2A, 3V 1000 @ 2A, 3V 1000 @ 1A, 2V
Power - Max 1.75 W 1.75 W 20 W 1.75 W 20 W 10 W
Frequency - Transition 25 MHz 25 MHz 25 MHz 25 MHz 25 MHz
Operating Temperature (Max) 150°C 150°C 150°C 150°C 150°C 150°C
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

For Direct Replacement (Preferred):

NJVMJD112G and NJVMJD112T4G are direct onsemi substitutes with Active product status. Both maintain identical electrical parameters and DPAK packaging. NJVMJD112T4G offers enhanced power dissipation (20 W vs. 1.75 W) and is supplied in Tape & Reel format with significantly higher inventory availability (20,200 pcs). NJVMJD112G is supplied in Tube format with 792 pcs in stock. Both parts are ROHS3 compliant and carry REACH Unaffected status.

For Cross-Manufacturer Substitution:

MJD112RLG (onsemi) and MJD112T4 (STMicroelectronics) provide parametric equivalence with Active product status. MJD112T4 offers the highest power rating (20 W) and largest inventory (25,844 pcs) among all substitutes. Both are ROHS3 compliant. MJD112RLG is available in Cut Tape format with 687 pcs in stock.

For Legacy System Maintenance:

2SD1980TL (Rohm Semiconductor) operates within the same voltage and current specifications but is classified as Not For New Designs. This part exhibits different saturation characteristics and lacks specified transition frequency data. Use only for maintenance of existing systems where electrical compatibility has been established.

Compliance Considerations:

All Active substitute parts carry ROHS3 compliance and REACH Unaffected status, suitable for applications requiring regulatory adherence. The obsolete KSH112GTM lacks documented RoHS status; substitution with compliant alternatives is recommended for new production.

Frequently Asked Questions (FAQ)

Q: Can NJVMJD112T4G replace KSH112GTM in all applications?

A: NJVMJD112T4G maintains identical electrical parameters (2 A, 100 V, 1000 hFE, 25 MHz) and DPAK packaging. The enhanced power rating (20 W vs. 1.75 W) provides additional thermal margin. Electrical substitution is direct; thermal design considerations may be simplified due to higher power capability.

Q: What is the difference between NJVMJD112G and NJVMJD112T4G?

A: Both parts are electrically identical with matching core specifications. The primary differences are packaging format (Tube vs. Tape & Reel) and power dissipation rating (1.75 W vs. 20 W). Selection depends on assembly process requirements and thermal design margins.

Q: Is MJD112T4 from STMicroelectronics a suitable replacement?

A: MJD112T4 provides full electrical equivalence with identical voltage, current, and gain specifications. The 20 W power rating exceeds the original 1.75 W specification. Cross-manufacturer substitution is electrically valid; supply chain and qualification procedures should be evaluated.

Q: Why is 2SD1980TL listed as a similar part rather than a direct substitute?

A: 2SD1980TL operates within the same 100 V, 2 A envelope but exhibits different saturation characteristics (1.5V @ 1mA, 1A vs. 3V @ 40mA, 4A) and lacks specified transition frequency. The CPT3 package differs from DPAK. This part is classified as Not For New Designs. Use only where electrical compatibility has been verified in existing designs.

Q: Are all substitute parts ROHS3 compliant?

A: All Active substitute parts (NJVMJD112G, NJVMJD112T4G, MJD112RLG, MJD112T4) are ROHS3 compliant. The original KSH112GTM (Obsolete) lacks documented RoHS status. 2SD1980TL (Not For New Designs) is ROHS3 compliant but not recommended for new designs.

Q: What packaging formats are available for substitutes?

A: NJVMJD112G is supplied in Tube format. NJVMJD112T4G is supplied in Tape & Reel. MJD112RLG and MJD112T4 are supplied in Cut Tape & Digi-Reel format. All maintain TO-252-3 DPAK (2 Leads + Tab) physical compatibility for surface mount assembly.

Q: Can I use a substitute with higher power rating in a design rated for 1.75 W?

A: Parts with higher power ratings (NJVMJD112T4G at 20 W, MJD112T4 at 20 W) are electrically compatible and provide additional thermal margin. Thermal design may be simplified; no electrical redesign is required. Verify PCB thermal management is adequate for the original 1.75 W specification.

Q: What is the inventory status of each substitute?

A: NJVMJD112T4G has the highest availability (20,200 pcs). MJD112T4 has 25,844 pcs in stock. MJD112RLG has 687 pcs. NJVMJD112G has 792 pcs. 2SD1980TL has 3,988 pcs. Availability should be confirmed for production requirements.

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