KSE45H8 Equivalent & Substitute Parts

Part Overview

The KSE45H8 is a Bipolar (BJT) Transistor manufactured by onsemi, classified as a PNP-type device in the TO-220-3 package. This component is rated for 60V collector-emitter breakdown voltage and 10A maximum collector current, with a maximum power dissipation of 1.67W and transition frequency of 40MHz. The KSE45H8 is currently listed as obsolete, necessitating identification of equivalent and substitute parts for ongoing design requirements and procurement needs.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	10	A
Voltage - Collector Emitter Breakdown (Max)	60	V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A	—
Current - Collector Cutoff (Max)	10	µA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 2A, 1V	—
Power - Max	1.67	W
Frequency - Transition	40	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitute parts for the KSE45H8 are identified based on strict electrical and mechanical parameter compatibility. The primary substitution criteria are:

Electrical Parameters:

Transistor type must be PNP
Collector-emitter breakdown voltage must be 60V or greater
Maximum collector current must be 10A or greater
Package and mounting type must be TO-220-3 through-hole configuration

Mechanical Parameters:

Package designation: TO-220-3
Mounting type: Through Hole

Substitutes are grouped into two categories: parametric equivalents (matching all key electrical specifications) and functional alternatives (meeting minimum electrical requirements with potential design trade-offs).

Parameter Comparison

Parameter	KSE45H8 (Main)	KSE45H8TU (Parametric Equivalent)	TIP32AG (Functional Alternative)
Manufacturer	onsemi	Fairchild Semiconductor	onsemi
Product Status	Obsolete	Active	Active
Transistor Type	PNP	PNP	PNP
Current - Collector (Ic) (Max)	10 A	10 A	3 A
Voltage - Collector Emitter Breakdown (Max)	60 V	60 V	60 V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 8A	1V @ 400mA, 8A	1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)	10 µA	10 µA	300 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 2A, 1V	60 @ 2A, 1V	10 @ 3A, 4V
Power - Max	1.67 W	1.67 W	2 W
Frequency - Transition	40 MHz	40 MHz	3 MHz
Operating Temperature (TJ)	150°C	150°C	-65°C ~ 150°C
Package / Case	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

KSE45H8TU (Parametric Equivalent - Recommended Primary Substitute)

The KSE45H8TU manufactured by Fairchild Semiconductor is a parametric equivalent to the obsolete KSE45H8. This part maintains identical electrical specifications across all critical parameters: 10A maximum collector current, 60V breakdown voltage, 1V saturation voltage at specified conditions, 60 minimum DC current gain, 1.67W power dissipation, and 40MHz transition frequency. The KSE45H8TU is currently in active production status and carries ROHS3 compliance certification. The TO-220-3 package and through-hole mounting configuration are identical, enabling direct board-level substitution without layout modifications.

TIP32AG (Functional Alternative - Limited Application)

The TIP32AG manufactured by onsemi is a functional alternative suitable only for applications where maximum collector current requirements do not exceed 3A. This part shares the 60V breakdown voltage rating and TO-220-3 package configuration but is limited to 3A maximum collector current compared to the 10A specification of the KSE45H8. The TIP32AG exhibits reduced DC current gain (10 minimum versus 60 minimum), lower transition frequency (3MHz versus 40MHz), and higher collector cutoff current (300µA versus 10µA). The TIP32AG is in active production status with ROHS3 compliance and extended operating temperature range (-65°C to 150°C). This part is suitable only for designs with reduced current demands and lower frequency requirements.

Frequently Asked Questions (FAQ)

Q: Can the KSE45H8TU be used as a direct replacement for the KSE45H8?

A: Yes. The KSE45H8TU is a parametric equivalent with identical electrical specifications and package configuration. Direct substitution is possible without circuit modifications.

Q: What are the limitations of using TIP32AG as a substitute?

A: The TIP32AG is limited to 3A maximum collector current, compared to 10A for the KSE45H8. Applications requiring collector currents above 3A cannot use this part. Additionally, the TIP32AG has lower DC current gain (10 versus 60) and lower transition frequency (3MHz versus 40MHz), making it unsuitable for high-frequency switching applications.

Q: Are both substitute parts available in the same package?

A: Yes. Both KSE45H8TU and TIP32AG are supplied in TO-220-3 packages with through-hole mounting, matching the original KSE45H8 package configuration.

Q: What is the difference in compliance status between the main part and substitutes?

A: The KSE45H8 (obsolete) does not specify RoHS status. Both substitute parts carry ROHS3 compliance certification, indicating compliance with current environmental regulations.

Q: Which substitute should be selected for new designs?

A: For new designs requiring 10A collector current capability and 40MHz transition frequency, the KSE45H8TU is the appropriate selection. For applications with reduced current requirements (≤3A) and lower frequency demands, the TIP32AG may be considered.

Q: Are there any thermal considerations when substituting these parts?

A: The KSE45H8 and KSE45H8TU both specify 150°C maximum junction temperature. The TIP32AG specifies an operating temperature range of -65°C to 150°C, providing extended low-temperature capability. All three parts are rated for identical maximum junction temperature, so thermal design considerations remain consistent.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message