KSD882YS Equivalent & Substitute Parts

Part Overview

The KSD882YS is an NPN bipolar junction transistor manufactured by onsemi, rated for 30V collector-emitter breakdown voltage and 3A maximum collector current. This device is packaged in TO-126-3 through-hole configuration and is currently designated as Last Time Buy status. The identification of equivalent and substitute parts is necessary to ensure design continuity and procurement flexibility, particularly given the Last Time Buy classification of the primary part number.

Substiute Parts

KSD882YS
onsemiIn Stock: 9447KSD882YS Datasheet
KSD882YS
Current Part
KSD882YSTU
onsemiIn Stock: 20402KSD882YSTU Datasheet
KSD882YSTU
Direct
2SD882
STMicroelectronicsIn Stock: 302852SD882 Datasheet
2SD882
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Maximum Collector Current (Ic) 3 A
Collector-Emitter Breakdown Voltage (Max) 30 V
Maximum Power Dissipation 1 W
Transition Frequency 90 MHz
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package Type TO-126-3

Substitute Part Grouping Explanation

Substitution of the KSD882YS is determined by strict equivalence across the following critical parameters: transistor type (NPN), maximum collector current (3A), collector-emitter breakdown voltage (30V), mounting configuration (through-hole), and package compatibility (TO-126-3 or equivalent mechanical form factor).

The substitute parts identified maintain these core electrical specifications. Variations in secondary parameters such as power dissipation, transition frequency, DC current gain, and saturation voltage characteristics are noted but do not preclude functional substitution within circuits designed for the KSD882YS baseline specifications.

Parameter Comparison

Parameter KSD882YS (onsemi) KSD882YSTU (onsemi) 2SD882 (STMicroelectronics)
Transistor Type NPN NPN NPN
Ic (Max) 3 A 3 A 3 A
Vce Breakdown (Max) 30 V 30 V 30 V
Power (Max) 1 W 1 W 12.5 W
Frequency - Transition 90 MHz 90 MHz 100 MHz
Operating Temperature (TJ) -55 to 150 °C -55 to 150 °C Up to 150 °C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-126-3 TO-126-3 SOT-32 (TO-126)
Packaging Format Bulk Tube Tube
Product Status Last Time Buy Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

KSD882YSTU (onsemi): This part is the direct equivalent to KSD882YS with identical electrical specifications and package designation. The primary distinction is packaging format (tube versus bulk) and active product status. KSD882YSTU is recommended as the primary substitute for new procurement and design continuity, as it maintains full electrical and mechanical compatibility while offering active availability status.

2SD882 (STMicroelectronics): This part shares the core electrical requirements of 3A collector current and 30V breakdown voltage with through-hole mounting. The 2SD882 exhibits enhanced power dissipation capability (12.5W versus 1W) and marginally higher transition frequency (100MHz versus 90MHz). The package designation SOT-32 (TO-126) is mechanically compatible with TO-126-3 applications. The 2SD882 is suitable for applications where the enhanced thermal performance is beneficial or where STMicroelectronics supply chain preference exists. All parts maintain ROHS3 compliance and REACH unaffected status.

Frequently Asked Questions (FAQ)

Q: Can KSD882YSTU be used as a direct replacement for KSD882YS?

A: Yes. KSD882YSTU is manufactured by onsemi with identical electrical specifications, including 3A maximum collector current, 30V breakdown voltage, 1W power rating, and 90MHz transition frequency. Both devices use TO-126-3 packaging. The only difference is packaging format (tube versus bulk). Electrical and mechanical compatibility is complete.

Q: Is the 2SD882 a suitable substitute for the KSD882YS?

A: The 2SD882 meets the core electrical requirements: 3A collector current, 30V breakdown voltage, and through-hole mounting in a mechanically compatible package (SOT-32/TO-126). However, the 2SD882 exhibits different secondary characteristics, including higher power dissipation (12.5W), higher transition frequency (100MHz), and different saturation voltage and DC current gain specifications. Substitution is valid for circuits designed within the KSD882YS baseline specifications but requires verification that the enhanced performance characteristics do not introduce unintended circuit behavior.

Q: What is the difference between TO-126-3 and SOT-32 packaging?

A: TO-126-3 and SOT-32 (TO-126) are mechanically compatible through-hole packages with identical pin configurations and lead spacing. Both accommodate three-terminal transistor devices in standard PCB mounting applications. The designations reflect different naming conventions from different manufacturers and standards bodies but represent equivalent physical form factors.

Q: Why is KSD882YS designated as Last Time Buy?

A: Last Time Buy status indicates that onsemi has discontinued or is discontinuing production of this part number. This designation necessitates identification of active substitute parts to ensure long-term design and procurement viability. KSD882YSTU and 2SD882 are active alternatives that maintain electrical compatibility.

Q: Are all three parts RoHS compliant?

A: Yes. KSD882YS, KSD882YSTU, and 2SD882 are all ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and use.

Q: What are the key differences in DC current gain between these parts?

A: KSD882YS and KSD882YSTU specify minimum DC current gain (hFE) of 160 at 1A collector current and 2V Vce. The 2SD882 specifies minimum hFE of 100 at 100mA collector current and 2V Vce. These differences reflect different measurement conditions and device characteristics but do not preclude functional substitution in circuits designed for the KSD882YS baseline specifications.

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