KSD569RTU Equivalent & Substitute Parts

Part Overview

The KSD569RTU is an NPN bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 7 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The KSD569RTU delivers 1.5 W maximum power dissipation with a minimum DC current gain of 40 at 3 A collector current and 1 V collector-emitter voltage.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	80	V
Current - Collector (Ic) (Max)	7	A
Power - Max	1.5	W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 3A, 1V	—
Vce Saturation (Max) @ Ib, Ic	500mV @ 500mA, 5A	—
Current - Collector Cutoff (Max)	10µA	—
Operating Temperature (Max)	150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the KSD569RTU is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Collector-emitter breakdown voltage must equal or exceed 80 V
Maximum collector current must equal or exceed 7 A
Maximum power dissipation must equal or exceed 1.5 W
DC current gain characteristics must support the intended application
Vce saturation and collector cutoff current must be within acceptable operating ranges

Mechanical Compatibility Criteria:

Mounting type must be through-hole
Package must be TO-220-3 or equivalent TO-220 variant
Pin configuration must be compatible with TO-220-3 footprint

The substitute parts listed below meet these criteria and are classified as active products with current manufacturing status and compliance certifications.

Parameter Comparison

Parameter	KSD569RTU	D44H11G	TIP41C
Manufacturer	onsemi	onsemi	NTE Electronics, Inc
Transistor Type	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	100 V
Current - Collector (Ic) (Max)	7 A	10 A	6 A
Power - Max	1.5 W	2 W	2 W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 3A, 1V	40 @ 4A, 1V	15 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	500mV @ 500mA, 5A	1V @ 400mA, 8A	1.5V @ 600mA, 6A
Current - Collector Cutoff (Max)	10µA	10µA	700µA
Operating Temperature (Max)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active

Engineering Selection Recommendations

D44H11G (onsemi): The D44H11G is an active product manufactured by onsemi with identical collector-emitter breakdown voltage (80 V) and superior current handling (10 A versus 7 A). Power dissipation is increased to 2 W, and DC current gain characteristics are equivalent at the specified test point. This device is RoHS3 compliant and represents the closest electrical match to the KSD569RTU. The D44H11G is suitable for direct substitution in applications where the 7 A collector current requirement can be met by the higher-rated device.

TIP41C (NTE Electronics, Inc): The TIP41C is an active product with higher collector-emitter breakdown voltage (100 V) and 2 W power dissipation. However, maximum collector current is rated at 6 A, which is below the KSD569RTU specification of 7 A. The DC current gain is significantly lower (15 @ 3A, 4V versus 40 @ 3A, 1V), and collector cutoff current is elevated at 700µA. The TIP41C is RoHS3 compliant but is suitable only for applications where collector current does not exceed 6 A and where the reduced current gain is acceptable.

Both substitute parts are available in active production status with established supply chains and compliance certifications, providing long-term design support compared to the obsolete KSD569RTU.

Frequently Asked Questions (FAQ)

Q: Can the D44H11G replace the KSD569RTU in all applications?

A: The D44H11G meets or exceeds all electrical specifications of the KSD569RTU, including voltage rating, current capacity, and power dissipation. Both devices use the TO-220-3 package with identical pin configuration. Substitution is valid for applications operating within the KSD569RTU's original design parameters.

Q: What is the primary limitation of the TIP41C as a substitute?

A: The TIP41C has a maximum collector current rating of 6 A, which is below the KSD569RTU specification of 7 A. Additionally, the DC current gain is lower (15 @ 3A, 4V). The TIP41C is suitable only for applications where collector current remains below 6 A and where the reduced current gain does not compromise circuit performance.

Q: Are there package compatibility concerns between these devices?

A: All three devices use the TO-220-3 through-hole package. The D44H11G is supplied in TO-220 variant packaging, and the TIP41C uses TO-220-3 packaging. Both are mechanically compatible with TO-220-3 footprints and mounting hardware.

Q: What compliance certifications apply to the substitute parts?

A: The D44H11G is RoHS3 compliant. The TIP41C is RoHS3 compliant. Both devices carry REACH Unaffected status. The KSD569RTU, being obsolete, does not carry current compliance certifications.

Q: How do the saturation voltage characteristics compare?

A: The KSD569RTU exhibits 500 mV saturation at 500 mA base current and 5 A collector current. The D44H11G shows 1 V saturation at 400 mA base current and 8 A collector current. The TIP41C shows 1.5 V saturation at 600 mA base current and 6 A collector current. Applications sensitive to saturation voltage drop should account for these differences.

Q: Is the D44H11G the preferred substitute?

A: The D44H11G is the closest electrical equivalent, manufactured by the same supplier (onsemi) with identical voltage rating and superior current capacity. It is the preferred choice for direct substitution where design parameters permit the higher current rating.

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