KSD560R Equivalent & Substitute Parts

Part Overview

The KSD560R is an NPN Darlington bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 5 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. The KSD560R serves applications requiring medium-power NPN switching and amplification with Darlington configuration for high current gain.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) (Max)	5	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 3mA, 3A	—
Current - Collector Cutoff (Max)	1µA (ICBO)	—
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 3A, 2V	—
Power - Max	1.5	W
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the KSD560R is determined by electrical and mechanical parameter compatibility within the NPN Darlington transistor category. The critical parameters governing substitution are:

Electrical Parameters:

Collector current rating (Ic Max): 5 A minimum
Collector-emitter breakdown voltage (Vce): 100 V minimum
Transistor configuration: NPN Darlington type
Power dissipation capability: 1.5 W minimum

Mechanical Parameters:

Mounting type: Through Hole
Package type: TO-220-3 or compatible TO-220 variant

The KSD560RTSTU is a direct equivalent manufactured by onsemi with identical electrical specifications and the same base product number (KSD560). The TIP122G is a similar substitute that meets the core electrical requirements (5 A, 100 V, NPN Darlington) and shares the same through-hole TO-220 package family, though with different saturation characteristics and operating temperature range.

Parameter Comparison

Parameter	KSD560R	KSD560RTSTU	TIP122G
Manufacturer	onsemi	onsemi	onsemi
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington
Current - Collector (Ic) (Max)	5 A	5 A	5 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 3mA, 3A	1.5V @ 3mA, 3A	4V @ 20mA, 5A
Current - Collector Cutoff (Max)	1µA (ICBO)	1µA (ICBO)	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 3A, 2V	2000 @ 3A, 2V	1000 @ 3A, 3V
Power - Max	1.5 W	1.5 W	2 W
Operating Temperature (TJ)	150°C	150°C	-65°C ~ 150°C
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Last Time Buy	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

KSD560RTSTU (Direct Equivalent): The KSD560RTSTU is the primary substitute for the obsolete KSD560R. Both devices share identical electrical specifications, the same base product number (KSD560), and are manufactured by onsemi. The KSD560RTSTU carries Last Time Buy status and ROHS3 compliance certification. This part is suitable for direct replacement in existing designs without circuit modification.

TIP122G (Similar Substitute): The TIP122G is an active production alternative that meets the core electrical requirements of 5 A collector current and 100 V breakdown voltage in NPN Darlington configuration. The TIP122G exhibits higher saturation voltage (4V @ 20mA, 5A versus 1.5V @ 3mA, 3A), lower DC current gain (1000 versus 2000), and higher collector cutoff current (500µA versus 1µA). The TIP122G provides extended operating temperature range (-65°C to 150°C) and higher power rating (2 W versus 1.5 W). This device is suitable for applications where the electrical differences do not impact circuit performance, and where active production status is required.

Frequently Asked Questions (FAQ)

Q: Can the KSD560RTSTU be used as a direct replacement for the KSD560R?

A: Yes. The KSD560RTSTU is a direct equivalent with identical electrical specifications and the same base product number. Both devices are manufactured by onsemi and packaged in TO-220-3. No circuit modifications are required.

Q: What are the key differences between the KSD560R and TIP122G?

A: The TIP122G differs in saturation voltage (4V versus 1.5V at rated current), DC current gain (1000 versus 2000), collector cutoff current (500µA versus 1µA), power rating (2 W versus 1.5 W), and operating temperature range (-65°C to 150°C versus 150°C maximum). These differences may affect circuit performance in applications sensitive to saturation characteristics or gain requirements.

Q: Are the KSD560R and TIP122G pin-compatible?

A: Both devices use the TO-220-3 package with identical pin configuration (Collector, Base, Emitter). Physical and electrical pin compatibility is confirmed.

Q: What is the product status of each substitute?

A: The KSD560R is obsolete. The KSD560RTSTU is Last Time Buy status. The TIP122G is active production.

Q: Do the substitute parts meet RoHS compliance?

A: The KSD560RTSTU and TIP122G are both ROHS3 compliant. RoHS status for the original KSD560R is not specified in available documentation.

Q: Which substitute should be selected for new designs?

A: For new designs requiring the exact electrical characteristics of the KSD560R, the TIP122G is recommended due to active production status. For legacy design support or direct replacement of existing KSD560R inventory, the KSD560RTSTU is appropriate while Last Time Buy status permits.

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