KSD526O Equivalent & Substitute Parts

Part Overview

The KSD526O is an NPN bipolar junction transistor manufactured by onsemi, rated for 80V collector-emitter breakdown voltage and 4A maximum collector current. The device is housed in a TO-220-3 through-hole package and is rated for 30W maximum power dissipation with an 8MHz transition frequency. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

KSD526O
onsemiIn Stock: 1003KSD526O Datasheet
KSD526O
Current Part
2N6123 PBFREE
Central Semiconductor CorpIn Stock: 16972N6123 PBFREE Datasheet
2N6123 PBFREE
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 4 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Power - Max 30 W
Frequency - Transition 8 MHz
Package / Case TO-220-3
Mounting Type Through Hole
Operating Temperature (Max) 150 °C

Substitute Part Grouping Explanation

Substitution of the KSD526O is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Transistor polarity: NPN
  • Collector-emitter breakdown voltage: 80V minimum
  • Maximum collector current: 4A minimum
  • Package type: TO-220-3 through-hole
  • Maximum operating temperature: 150°C or higher

Allowable Variation Parameters:

  • Power dissipation rating: Equal to or greater than 30W
  • Transition frequency: No minimum requirement specified
  • DC current gain (hFE): No specific matching requirement
  • Vce saturation characteristics: Allowable variation within device specifications

The 2N6123 PBFREE meets all critical matching parameters and is therefore classified as a direct substitute for the KSD526O.

Parameter Comparison

Parameter KSD526O 2N6123 PBFREE Unit
Manufacturer onsemi Central Semiconductor Corp
Transistor Type NPN NPN
Current - Collector (Ic) Max 4 4 A
Voltage - Collector Emitter Breakdown (Max) 80 80 V
Power - Max 30 40 W
Frequency - Transition 8 2.5 MHz
Operating Temperature (Max) 150 150 °C
Package / Case TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole
Product Status Obsolete Obsolete
RoHS Status Not specified ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The 2N6123 PBFREE is a direct electrical and mechanical substitute for the KSD526O. Both devices share identical collector current ratings (4A), collector-emitter breakdown voltage (80V), maximum operating temperature (150°C), and TO-220-3 package configuration.

The 2N6123 PBFREE provides a higher power dissipation rating (40W versus 30W), which offers additional thermal margin in applications. The lower transition frequency (2.5MHz versus 8MHz) of the 2N6123 PBFREE does not restrict substitution in applications where the KSD526O's 8MHz specification is not a functional requirement.

The 2N6123 PBFREE carries ROHS3 compliance certification, whereas the KSD526O compliance status is not specified. Both devices are REACH Unaffected and carry unlimited moisture sensitivity level (MSL 1).

Both parts are classified as obsolete. Inventory availability differs: KSD526O has 942 pieces in stock, while 2N6123 PBFREE has 1599 pieces in stock.

Frequently Asked Questions (FAQ)

Q: Can the 2N6123 PBFREE replace the KSD526O in all applications?

A: The 2N6123 PBFREE is electrically and mechanically equivalent to the KSD526O for applications requiring NPN transistor operation at 80V, 4A ratings in a TO-220-3 package. The lower transition frequency of the 2N6123 PBFREE (2.5MHz) may not be suitable for applications where the KSD526O's 8MHz specification is a functional requirement.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) manufacturer (onsemi versus Central Semiconductor Corp), (2) transition frequency (8MHz versus 2.5MHz), (3) power dissipation rating (30W versus 40W), and (4) RoHS compliance status (not specified versus ROHS3 Compliant).

Q: Are the pin configurations identical?

A: Both devices use the TO-220-3 through-hole package with identical pin configuration, allowing direct mechanical substitution without PCB modification.

Q: What is the impact of the higher power rating on the 2N6123 PBFREE?

A: The 40W power rating of the 2N6123 PBFREE provides additional thermal headroom compared to the 30W rating of the KSD526O. This does not restrict substitution and may provide improved thermal performance in power-dissipative applications.

Q: Are there compliance or regulatory differences between these parts?

A: The 2N6123 PBFREE is ROHS3 Compliant, while the KSD526O compliance status is not specified. Both parts are REACH Unaffected and carry identical moisture sensitivity levels (MSL 1).

Q: Which part should be selected for new designs?

A: Selection between these obsolete parts should be based on application-specific requirements for transition frequency, available inventory, and regulatory compliance needs. The 2N6123 PBFREE offers ROHS3 compliance and higher power dissipation rating.

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