KSD1616-G-AP Equivalent & Substitute Parts

Part Overview

The KSD1616-G-AP is an NPN bipolar junction transistor manufactured by Micro Commercial Co, designed for small-signal switching and amplification applications. This device features a maximum collector current of 1 A, collector-emitter breakdown voltage of 50 V, and a transition frequency of 160 MHz in a through-hole TO-92 package. The KSD1616-G-AP is classified as obsolete, making identification of equivalent substitute parts necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Current - Collector (Ic) Max	1	A
Voltage - Collector Emitter Breakdown (Max)	50	V
Vce Saturation (Max) @ Ib, Ic	300 mV @ 50 mA, 1 A	—
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) Min @ Ic, Vce	200 @ 100 mA, 2 V	—
Power - Max	750	mW
Frequency - Transition	160	MHz
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—

Substitute Part Grouping Explanation

Substitution of the KSD1616-G-AP is determined by electrical and mechanical parameter compatibility within the NPN bipolar transistor category. The critical parameters governing substitution are:

Electrical Parameters:

Transistor type (NPN)
Maximum collector current (1 A minimum)
Collector-emitter breakdown voltage (50 V minimum)
Vce saturation characteristics (300 mV @ 50 mA, 1 A)
DC current gain (hFE ≥ 200 @ 100 mA, 2 V)
Power dissipation (750 mW)
Transition frequency (160 MHz)

Mechanical Parameters:

Through-hole mounting
TO-92-3 package configuration

The KSD1616AGTA qualifies as a direct substitute based on matching or exceeding all critical electrical specifications and maintaining identical mechanical packaging. The substitute part demonstrates enhanced voltage rating (60 V versus 50 V) while maintaining all other electrical characteristics at or above the original specification levels.

Parameter Comparison

Parameter	KSD1616-G-AP	KSD1616AGTA	Match Status
Transistor Type	NPN	NPN	Identical
Current - Collector (Ic) Max	1 A	1 A	Identical
Voltage - Collector Emitter Breakdown (Max)	50 V	60 V	Substitute Exceeds
Vce Saturation (Max) @ Ib, Ic	300 mV @ 50 mA, 1 A	300 mV @ 50 mA, 1 A	Identical
Current - Collector Cutoff (Max)	100 nA	100 nA	Identical
DC Current Gain (hFE) Min @ Ic, Vce	200 @ 100 mA, 2 V	200 @ 100 mA, 2 V	Identical
Power - Max	750 mW	750 mW	Identical
Frequency - Transition	160 MHz	160 MHz	Identical
Mounting Type	Through Hole	Through Hole	Identical
Package / Case	TO-92-3	TO-92-3	Identical

Engineering Selection Recommendations

The KSD1616AGTA is a qualified substitute for the obsolete KSD1616-G-AP based on the following engineering criteria:

Product Status: The KSD1616-G-AP is classified as obsolete, while the KSD1616AGTA is active. Selection of the active substitute part ensures long-term availability and supply chain continuity.

Electrical Compatibility: The KSD1616AGTA maintains all critical electrical specifications at or above the original part level. The enhanced collector-emitter breakdown voltage (60 V versus 50 V) provides additional design margin without introducing incompatibility.

Mechanical Compatibility: Both parts utilize identical through-hole TO-92-3 packaging, ensuring direct physical and functional interchangeability in existing circuit board layouts.

Compliance: The KSD1616AGTA carries ECCN EAR99 classification, consistent with export control requirements. RoHS compliance status is maintained through the substitute part selection.

Frequently Asked Questions (FAQ)

Q: Can the KSD1616AGTA be used as a direct replacement for the KSD1616-G-AP in existing designs?

A: Yes. The KSD1616AGTA is electrically and mechanically compatible with the KSD1616-G-AP. All critical electrical parameters match or exceed the original specification, and the TO-92-3 package configuration is identical, allowing direct substitution without circuit modification.

Q: What is the significance of the higher voltage rating on the KSD1616AGTA?

A: The KSD1616AGTA features a 60 V collector-emitter breakdown voltage compared to the 50 V rating of the KSD1616-G-AP. This represents an enhanced specification that provides additional design margin and does not create incompatibility. Circuits designed for 50 V operation function within the 60 V specification.

Q: Are there any thermal or frequency performance differences between these parts?

A: No. Both parts share identical transition frequency (160 MHz), maximum power dissipation (750 mW), and operating temperature range specifications. Thermal and frequency performance characteristics are equivalent.

Q: Why is the KSD1616-G-AP classified as obsolete?

A: The KSD1616-G-AP is no longer in active production. The KSD1616AGTA represents the active equivalent part from Fairchild Semiconductor, ensuring continued availability for new designs and replacement applications.

Q: Are there any packaging or lead configuration differences?

A: No. Both parts utilize the TO-92-3 package with formed leads in identical configuration. Physical dimensions and lead spacing are equivalent, supporting direct board-level substitution.

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