KSC815YBU Equivalent & Substitute Parts

Part Overview

The KSC815YBU is an NPN bipolar junction transistor manufactured by onsemi, rated for 45 V collector-emitter breakdown voltage and 200 mA maximum collector current. This device is packaged in a TO-92-3 through-hole configuration and is designed for general-purpose switching and amplification applications with a maximum power dissipation of 400 mW.

The KSC815YBU is classified as obsolete. Locating equivalent substitute parts is necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades where this transistor is specified.

Substiute Parts

KSC815YBU

onsemiIn Stock: 821KSC815YBU Datasheet

Current PartRFQ

2N6428 PBFREE

Central Semiconductor CorpIn Stock: 9712N6428 PBFREE Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the KSC815YBU is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Transistor type must be NPN
• Maximum collector current must be equal to or greater than 200 mA
• Collector-emitter breakdown voltage must be equal to or greater than 45 V
• Maximum power dissipation must be equal to or greater than 400 mW
• Transition frequency must support the intended application frequency range

Mechanical Compatibility Criteria:

• Mounting type must be through-hole
• Package must be TO-92-3 or equivalent TO-226-3 configuration

The 2N6428 PBFREE meets these substitution criteria. It is an NPN transistor with 200 mA maximum collector current, 50 V collector-emitter breakdown voltage (exceeding the 45 V requirement), 1.5 W maximum power dissipation (exceeding the 400 mW requirement), and TO-92-3 through-hole packaging. The 2N6428 PBFREE is classified as active product status, ensuring ongoing availability and supply chain support.

Parameter Comparison

Engineering Selection Recommendations

The 2N6428 PBFREE is a direct substitute for the KSC815YBU based on electrical and mechanical parameter alignment. The substitute part exceeds the original specification in collector-emitter breakdown voltage (50 V versus 45 V) and maximum power dissipation (1.5 W versus 400 mW), providing enhanced design margin and reliability.

The 2N6428 PBFREE is classified as active product status, ensuring component availability and supply chain continuity. The part is ROHS3 compliant, meeting current environmental and regulatory requirements for electronic component manufacturing and distribution.

The transition frequency of the 2N6428 PBFREE is 100 MHz, which is lower than the KSC815YBU specification of 200 MHz. This parameter difference must be evaluated against the specific application frequency requirements. For applications operating below 100 MHz, the 2N6428 PBFREE is fully compatible. For applications requiring operation above 100 MHz, frequency performance must be verified against circuit design specifications.

Both parts share identical TO-92-3 through-hole packaging, permitting direct mechanical substitution without PCB layout modification.

Frequently Asked Questions (FAQ)

Q: Can the 2N6428 PBFREE directly replace the KSC815YBU in existing designs?

A: The 2N6428 PBFREE meets the electrical and mechanical requirements for substitution. Both devices are NPN transistors with 200 mA maximum collector current, TO-92-3 through-hole packaging, and compatible operating temperature ranges. The substitute part provides higher voltage and power ratings, improving design margin. Transition frequency differences must be evaluated for high-frequency applications.

Q: What is the primary reason for substituting the KSC815YBU?

A: The KSC815YBU is classified as obsolete. The 2N6428 PBFREE is an active product with confirmed supply availability, making it the appropriate choice for new production and long-term component sourcing.

Q: Are there packaging differences between these parts?

A: Both the KSC815YBU and 2N6428 PBFREE use TO-92-3 through-hole packaging. No PCB layout or mechanical modifications are required for substitution.

Q: How do the electrical characteristics compare?

A: The 2N6428 PBFREE exceeds the KSC815YBU in collector-emitter breakdown voltage (50 V versus 45 V) and maximum power dissipation (1.5 W versus 400 mW). The KSC815YBU has higher transition frequency (200 MHz versus 100 MHz). For applications operating below 100 MHz, the 2N6428 PBFREE is fully compatible with enhanced electrical margins.

Q: What compliance certifications apply to the substitute part?

A: The 2N6428 PBFREE is ROHS3 compliant and REACH unaffected. Both parts carry EAR99 export classification.

Q: What is the DC current gain difference between these transistors?

A: The KSC815YBU specifies minimum DC current gain of 120 at 50 mA collector current and 1 V collector-emitter voltage. The 2N6428 PBFREE specifies minimum DC current gain of 250 at 10 mA collector current and 5 V collector-emitter voltage. These measurements are taken at different operating points and cannot be directly compared. Circuit design must account for the specific gain characteristics at the intended operating conditions.