KSC5305DFTTU Equivalent & Substitute Parts

Part Overview

The KSC5305DFTTU is an NPN Bipolar Junction Transistor (BJT) manufactured by onsemi, rated for 400 V collector-emitter breakdown voltage and 5 A maximum collector current in a Through Hole TO-220-3 package. This device is designed for high-voltage switching applications with a maximum power dissipation of 75 W.

The KSC5305DFTTU carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	400	V
Current - Collector (Ic) (Max)	5	A
Power - Max	75	W
Vce Saturation (Max) @ Ib, Ic	500mV @ 400mA, 2A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 2A, 1V	—
Current - Collector Cutoff (Max)	10	µA
Operating Temperature (Max)	150	°C
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the KSC5305DFTTU is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Transistor Type: NPN configuration required
Voltage Rating: Collector-Emitter Breakdown Voltage must equal or exceed 400 V
Current Rating: Maximum Collector Current must equal or exceed 5 A
Power Dissipation: Maximum Power rating must support application requirements
Saturation Characteristics: Vce(sat) performance at specified base and collector currents
Leakage Current: Collector Cutoff Current (ICBO) specifications
DC Current Gain: hFE minimum values at specified operating points

Mechanical Compatibility Criteria:

Package Type: TO-220-3 or compatible Through Hole package
Mounting: Through Hole configuration for PCB assembly

The MJF18004G meets these substitution criteria through equivalent NPN configuration, matching collector current rating (5 A), exceeding voltage rating (450 V vs. 400 V), and compatible Through Hole packaging (TO-220FP variant of TO-220-3 family).

Parameter Comparison

Parameter	KSC5305DFTTU	MJF18004G	Unit
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	400	450	V
Current - Collector (Ic) (Max)	5	5	A
Power - Max	75	35	W
Vce Saturation (Max) @ Ib, Ic	500mV @ 400mA, 2A	750mV @ 500mA, 2.5A	—
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 2A, 1V	14 @ 300mA, 5V	—
Current - Collector Cutoff (Max)	10	100	µA
Operating Temperature (Max)	150	150	°C
Package / Case	TO-220-3	TO-220FP	—
Mounting Type	Through Hole	Through Hole	—
Product Status	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

MJF18004G as Primary Substitute:

The MJF18004G is suitable as a substitute for the KSC5305DFTTU based on the following engineering factors:

Electrical Equivalence: Both devices are NPN transistors with identical maximum collector current ratings (5 A). The MJF18004G provides higher voltage rating (450 V vs. 400 V), ensuring compatibility with applications designed for the KSC5305DFTTU.
Product Status: The MJF18004G carries Active product status, ensuring ongoing availability and supply chain support. This addresses the obsolescence of the KSC5305DFTTU.
Regulatory Compliance: Both parts are ROHS3 Compliant and REACH Unaffected, maintaining equivalent environmental and regulatory standing.
Package Compatibility: Both devices utilize Through Hole TO-220 family packaging (TO-220-3 and TO-220FP), supporting direct PCB mounting without redesign.

Design Considerations:

Applications must account for the following parameter differences:

Maximum Power Dissipation: MJF18004G rated at 35 W versus KSC5305DFTTU at 75 W. Thermal management and power budget analysis required for high-power applications.
Vce Saturation: MJF18004G exhibits higher saturation voltage (750mV vs. 500mV) at specified operating points, affecting switching losses.
Collector Cutoff Current: MJF18004G shows higher leakage (100µA vs. 10µA), relevant for low-power standby applications.

Frequently Asked Questions (FAQ)

Q: Can the MJF18004G directly replace the KSC5305DFTTU without circuit modification?

A: Direct pin-compatible replacement is possible due to identical TO-220-3 family packaging and NPN configuration. However, circuit performance may differ due to variations in saturation voltage, leakage current, and maximum power dissipation. Application-specific analysis is required.

Q: What is the primary advantage of substituting to the MJF18004G?

A: The MJF18004G is an Active product with current manufacturing support, addressing the Obsolete status of the KSC5305DFTTU. This ensures long-term supply chain availability and design continuity.

Q: Are there electrical limitations when using the MJF18004G in place of the KSC5305DFTTU?

A: The MJF18004G has a lower maximum power rating (35 W vs. 75 W). Applications requiring sustained power dissipation above 35 W must implement additional thermal management or circuit redesign. The higher saturation voltage and leakage current may also affect switching performance in specific circuit topologies.

Q: Do both parts meet the same regulatory requirements?

A: Yes. Both the KSC5305DFTTU and MJF18004G are ROHS3 Compliant and REACH Unaffected, maintaining equivalent environmental and regulatory compliance.

Q: Is the TO-220FP package identical to the TO-220-3 package?

A: Both packages are part of the TO-220 family and support Through Hole mounting with compatible pin configurations. The FP designation indicates a full-pack variant. PCB footprints and mounting hardware are compatible.

Q: What applications are most suitable for the MJF18004G substitute?

A: The MJF18004G is suitable for switching applications where power dissipation remains below 35 W and where the higher voltage rating (450 V) provides design margin. Applications sensitive to saturation voltage or leakage current performance require detailed circuit analysis.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message