KSC5302DTU Equivalent & Substitute Parts

Part Overview

The KSC5302DTU is an NPN bipolar junction transistor manufactured by onsemi, rated for 400 V collector-emitter breakdown voltage and 2 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	400	V
Current - Collector (Ic) (Max)	2	A
Power - Max	50	W
Vce Saturation (Max)	500 mV @ 200 mA, 1 A	—
Current - Collector Cutoff (Max)	10	µA
DC Current Gain (hFE) (Min)	10 @ 1 A, 1 V	—
Operating Temperature (TJ)	150	°C
Package / Case	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the KSC5302DTU is determined by electrical and mechanical compatibility within the following parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Voltage - Collector Emitter Breakdown rating must equal or exceed 400 V
Current - Collector (Ic) maximum rating must equal or exceed 2 A
Power dissipation rating must equal or exceed 50 W
Operating temperature range must support 150°C junction temperature

Mechanical Compatibility Criteria:

Package type must be TO-220-3 or equivalent through-hole configuration
Mounting type must be through-hole

The TSC741CZ C0G from Taiwan Semiconductor Corporation meets these substitution criteria with enhanced electrical ratings and active product status.

Parameter Comparison

Parameter	KSC5302DTU (onsemi)	TSC741CZ C0G (Taiwan Semiconductor)	Unit
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	400	450	V
Current - Collector (Ic) (Max)	2	2.5	A
Power - Max	50	60	W
Vce Saturation (Max)	500 mV @ 200 mA, 1 A	2 V @ 600 mA, 2 A	—
Current - Collector Cutoff (Max)	10	250	µA
DC Current Gain (hFE) (Min)	10 @ 1 A, 1 V	50 @ 100 mA, 5 V	—
Operating Temperature (TJ)	150	150	°C
Package / Case	TO-220-3	TO-220-3	—
Mounting Type	Through Hole	Through Hole	—
Product Status	Obsolete	Active	—
RoHS Status	—	ROHS3 Compliant	—

Engineering Selection Recommendations

The TSC741CZ C0G from Taiwan Semiconductor Corporation is a suitable substitute for the obsolete KSC5302DTU. The substitute part provides equivalent or superior electrical performance across all critical parameters: voltage rating increased from 400 V to 450 V, collector current increased from 2 A to 2.5 A, and power dissipation increased from 50 W to 60 W. Both devices share identical TO-220-3 through-hole packaging and 150°C maximum junction temperature ratings.

The TSC741CZ C0G carries active product status, ensuring ongoing availability and supply chain continuity. The substitute part is ROHS3 compliant, supporting modern regulatory requirements. Both components maintain REACH Unaffected status and identical ECCN and HTSUS classifications.

The higher DC current gain specification of the TSC741CZ C0G (50 @ 100 mA, 5 V versus 10 @ 1 A, 1 V) and increased collector cutoff current (250 µA versus 10 µA) represent measurable differences in device characteristics that must be evaluated within specific circuit application contexts.

Frequently Asked Questions (FAQ)

Q: Can the TSC741CZ C0G directly replace the KSC5302DTU in existing designs?

A: The TSC741CZ C0G meets or exceeds all minimum electrical and mechanical requirements for substitution. Both devices are NPN transistors in TO-220-3 packages with identical maximum junction temperatures. The substitute part provides higher voltage, current, and power ratings. Circuit-level validation is required to confirm compatibility with specific application parameters, particularly regarding saturation voltage characteristics and current gain specifications.

Q: What are the key differences between these two transistors?

A: The primary differences are product status (obsolete versus active), voltage rating (400 V versus 450 V), maximum collector current (2 A versus 2.5 A), power dissipation (50 W versus 60 W), and DC current gain specifications. The TSC741CZ C0G exhibits higher collector cutoff current (250 µA versus 10 µA) and different saturation voltage characteristics. The substitute part includes ROHS3 compliance certification.

Q: Are the packages physically identical?

A: Both the KSC5302DTU and TSC741CZ C0G use TO-220-3 through-hole packages. Physical dimensions and pin configurations are compatible for direct board-level substitution without layout modifications.

Q: What compliance certifications apply to the substitute part?

A: The TSC741CZ C0G is ROHS3 compliant and maintains REACH Unaffected status. Both components share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: How do the current gain specifications differ?

A: The KSC5302DTU specifies minimum DC current gain of 10 at 1 A collector current and 1 V collector-emitter voltage. The TSC741CZ C0G specifies minimum DC current gain of 50 at 100 mA collector current and 5 V collector-emitter voltage. These measurements are taken at different operating points and reflect different device characteristics.

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