KSC2982CTF Equivalent & Substitute Parts

Part Overview

The KSC2982CTF is an NPN bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the SOT-89-3 package. This component operates at a maximum collector current of 2 A with a 10 V collector-emitter breakdown voltage and delivers 500 mW maximum power dissipation. The device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity.

Substiute Parts

KSC2982CTF

onsemiIn Stock: 924KSC2982CTF Datasheet

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2SD1620-TD-E

onsemiIn Stock: 23022SD1620-TD-E Datasheet

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2SD2661T100

Rohm SemiconductorIn Stock: 8112SD2661T100 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the KSC2982CTF is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Transistor type must be NPN
• Collector current rating must equal or exceed 2 A
• Collector-emitter breakdown voltage must equal or exceed 10 V
• Maximum power dissipation must equal or exceed 500 mW
• Operating temperature range must support 150°C junction temperature
• Transition frequency should support or exceed 150MHz for signal integrity

Mechanical Compatibility Criteria:

• Surface mount mounting type
• TO-243AA package classification
• Moisture sensitivity level MSL 1 (Unlimited)

The substitute parts identified below meet these electrical and mechanical requirements while offering active product status and current manufacturing availability.

Parameter Comparison

Engineering Selection Recommendations

2SD1620-TD-E (onsemi)

This substitute provides direct electrical compatibility with the KSC2982CTF. The 2SD1620-TD-E maintains the 10 V collector-emitter breakdown voltage and supports the required 2 A collector current specification. The device offers enhanced transition frequency (200MHz versus 150MHz) and improved saturation voltage characteristics (400mV versus 500mV). The part is manufactured by onsemi, the original KSC2982CTF manufacturer, ensuring design continuity. Active product status and ROHS3 compliance support long-term supply chain stability. The PCP package format differs from the original SOT-89-3 supplier device package; physical layout verification is required.

2SD2661T100 (Rohm Semiconductor)

This substitute exceeds the electrical requirements of the KSC2982CTF across multiple parameters. The 12 V collector-emitter breakdown voltage provides 2 V margin above the original 10 V specification. The 2 A collector current matches the original specification exactly. Significantly enhanced transition frequency (360MHz) and power dissipation capability (2 W versus 500 mW) support high-frequency and high-power applications. Superior saturation voltage performance (180mV) reduces power loss in switching applications. Active product status and ROHS3 compliance ensure regulatory compliance and supply availability. The MPT3 package format differs from the original SOT-89-3 supplier device package; physical layout verification is required.

Both substitute parts maintain TO-243AA package classification, surface mount mounting type, and MSL 1 moisture sensitivity rating. Selection between these alternatives depends on specific application requirements regarding saturation voltage, transition frequency, and power dissipation headroom.

Frequently Asked Questions (FAQ)

Q: Can the 2SD1620-TD-E directly replace the KSC2982CTF in existing designs?

A: The 2SD1620-TD-E meets all electrical specifications for the KSC2982CTF. Both devices are NPN transistors with identical 10 V collector-emitter breakdown voltage and 2 A maximum collector current. The primary consideration is the supplier device package format: the 2SD1620-TD-E uses PCP packaging while the original uses SOT-89-3. Physical footprint compatibility must be verified against the PCB layout before implementation.

Q: What are the advantages of the 2SD2661T100 over the KSC2982CTF?

A: The 2SD2661T100 provides enhanced performance across multiple parameters. The 12 V collector-emitter breakdown voltage exceeds the 10 V requirement by 2 V, providing additional design margin. Transition frequency increases from 150MHz to 360MHz, supporting faster switching applications. Power dissipation capability increases from 500 mW to 2 W, enabling higher-power circuit implementations. Saturation voltage reduces from 500mV to 180mV, decreasing power loss in saturated switching modes. These enhancements make the 2SD2661T100 suitable for applications requiring improved performance headroom.

Q: Are there package compatibility concerns with these substitutes?

A: All three devices share the TO-243AA package classification and surface mount mounting type. However, the supplier device packages differ: the KSC2982CTF uses SOT-89-3, the 2SD1620-TD-E uses PCP, and the 2SD2661T100 uses MPT3. These package format differences may affect PCB footprint, lead spacing, and component placement. Physical layout verification against the original design is required before production implementation.

Q: Do these substitutes meet regulatory compliance requirements?

A: Both substitute parts are ROHS3 compliant and REACH unaffected, meeting current regulatory standards. The original KSC2982CTF does not specify RoHS status. For applications requiring regulatory compliance documentation, the 2SD1620-TD-E and 2SD2661T100 provide certified compliance records. Both parts maintain MSL 1 (Unlimited) moisture sensitivity rating, matching the original specification.

Q: Which substitute is recommended for high-frequency applications?

A: The 2SD2661T100 is optimized for high-frequency operation with a 360MHz transition frequency, compared to 150MHz for the KSC2982CTF and 200MHz for the 2SD1620-TD-E. Applications requiring switching frequencies above 200MHz should utilize the 2SD2661T100 to ensure adequate frequency response and minimize switching losses.

Q: What is the difference in saturation voltage between these devices?

A: Saturation voltage directly impacts power dissipation in switching applications. The KSC2982CTF specifies 500mV saturation voltage at 50mA base current and 2A collector current. The 2SD1620-TD-E reduces this to 400mV at 60mA base current and 3A collector current. The 2SD2661T100 achieves the lowest saturation voltage at 180mV at 50mA base current and 1A collector current. Lower saturation voltage reduces heat generation and improves efficiency in saturated switching circuits.

Q: Can the 2SD1620-TD-E support higher collector currents than the KSC2982CTF?

A: Yes. The 2SD1620-TD-E is rated for 3 A maximum collector current, exceeding the KSC2982CTF specification of 2 A. This additional current capacity provides design flexibility for applications requiring higher current switching or amplification. However, both devices maintain identical 10 V collector-emitter breakdown voltage, so voltage stress limits remain equivalent.