KSC2982ATF Equivalent & Substitute Parts

Part Overview

The KSC2982ATF is an NPN bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the SOT-89-3 package. This component operates at a maximum collector current of 2 A with a 10 V collector-emitter breakdown voltage and delivers 500 mW maximum power dissipation. The device is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Active substitute components with compatible electrical and mechanical specifications are available from multiple manufacturers.

Substiute Parts

KSC2982ATF
onsemiIn Stock: 906KSC2982ATF Datasheet
KSC2982ATF
Current Part
2SD1620-TD-E
onsemiIn Stock: 23022SD1620-TD-E Datasheet
2SD1620-TD-E
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2SD2661T100
Rohm SemiconductorIn Stock: 8112SD2661T100 Datasheet
2SD2661T100
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BC868-25,115
Nexperia USA Inc.In Stock: 7932BC868-25,115 Datasheet
BC868-25,115
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Key Parameters

Parameter Value
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 10 V
Power - Max 500 mW
Frequency - Transition 150 MHz
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature (TJ) 150°C
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the KSC2982ATF is determined by electrical parameter compatibility within the following criteria:

Primary Substitution Parameters:

  • Transistor type must be NPN
  • Collector current rating (Ic) must equal or exceed 2 A
  • Collector-emitter breakdown voltage (VCEO) must equal or exceed 10 V
  • Power dissipation rating must equal or exceed 500 mW
  • Mounting type must be surface mount
  • Package case must be TO-243AA
  • Operating temperature range must support 150°C junction temperature

Secondary Compatibility Factors:

  • Transition frequency (fT) should support the intended application frequency range
  • DC current gain (hFE) characteristics should align with circuit biasing requirements
  • Saturation voltage (VCE(sat)) should be compatible with switching or linear operation modes

Three substitute parts meet these criteria with varying performance enhancements and product status classifications.

Parameter Comparison

Parameter KSC2982ATF 2SD1620-TD-E 2SD2661T100 BC868-25,115
Manufacturer onsemi onsemi Rohm Semiconductor Nexperia USA Inc.
Product Status Obsolete Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 2 A 3 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 10 V 10 V 12 V 20 V
Power - Max 500 mW 500 mW 2 W 500 mW
Frequency - Transition 150 MHz 200 MHz 360 MHz 170 MHz
Operating Temperature (TJ) 150°C 150°C 150°C 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89-3 PCP MPT3 SOT-89
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

2SD1620-TD-E (onsemi)

This substitute provides direct electrical compatibility with the KSC2982ATF while offering enhanced performance. The 2SD1620-TD-E maintains the 10 V collector-emitter breakdown voltage and 500 mW power rating, with increased collector current capability (3 A versus 2 A) and higher transition frequency (200 MHz versus 150 MHz). The component is classified as active with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The PCP package variant maintains TO-243AA case compatibility.

2SD2661T100 (Rohm Semiconductor)

This substitute offers the highest performance enhancement among available options. The 2SD2661T100 maintains 2 A collector current matching the original specification while providing increased collector-emitter breakdown voltage (12 V), significantly higher power dissipation (2 W), and superior transition frequency (360 MHz). The active product status and ROHS3 compliance support production continuity. The MPT3 package variant maintains TO-243AA case compatibility. This option is suitable for applications requiring enhanced thermal performance or higher frequency operation.

BC868-25,115 (Nexperia USA Inc.)

This substitute maintains electrical parity with the KSC2982ATF across primary parameters: 2 A collector current, 500 mW power dissipation, and 150°C operating temperature. The BC868-25,115 provides increased collector-emitter breakdown voltage (20 V), offering enhanced voltage margin for circuit protection. The component is active with ROHS3 compliance. The SOT-89 package variant maintains TO-243AA case compatibility. This option is suitable for applications requiring higher voltage headroom while maintaining identical current and power specifications.

Frequently Asked Questions (FAQ)

Q: Can the KSC2982ATF be directly replaced with any of these substitute parts?

A: All three substitute parts meet the minimum electrical requirements for direct replacement: NPN transistor type, 2 A or greater collector current, 10 V or greater collector-emitter breakdown voltage, 500 mW or greater power dissipation, surface mount configuration, and TO-243AA package case. Physical pin configuration and package footprint compatibility must be verified against the specific supplier device package variant (SOT-89-3, PCP, MPT3, or SOT-89).

Q: What is the difference between the supplier device packages listed?

A: The supplier device package designation (SOT-89-3, PCP, MPT3, SOT-89) refers to the specific physical package variant and tape format used during manufacturing and distribution. All variants maintain the TO-243AA case standard, ensuring mechanical and electrical compatibility. Selection between variants depends on procurement requirements, such as tape and reel specifications or cut tape availability.

Q: Which substitute offers the best performance upgrade?

A: The 2SD2661T100 provides the most significant performance enhancement, offering 4× power dissipation (2 W versus 500 mW), 2.4× transition frequency (360 MHz versus 150 MHz), and 20% higher collector-emitter breakdown voltage (12 V versus 10 V). This component is suitable for applications requiring enhanced thermal capability or higher frequency operation.

Q: Are all substitute parts RoHS compliant?

A: The 2SD1620-TD-E, 2SD2661T100, and BC868-25,115 are all ROHS3 compliant. The original KSC2982ATF RoHS status is not specified in the provided documentation. All four components maintain REACH Unaffected status and MSL 1 (Unlimited) moisture sensitivity classification.

Q: What is the primary advantage of the BC868-25,115 substitute?

A: The BC868-25,115 provides the highest collector-emitter breakdown voltage (20 V) among the substitutes, offering enhanced voltage margin and circuit protection capability while maintaining identical collector current (2 A) and power dissipation (500 mW) specifications as the original KSC2982ATF.

Q: Can these substitutes be used interchangeably in existing designs?

A: Electrical parameter compatibility is confirmed across all three substitutes for the specified operating conditions. Physical footprint verification is required to confirm compatibility with existing PCB layouts, as supplier device package variants may have different tape formats or reel specifications. Circuit biasing and frequency response characteristics should be evaluated based on the specific application requirements and the enhanced performance parameters of each substitute.

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