KSC2786RTA Equivalent & Substitute Parts

Part Overview

The KSC2786RTA is an RF transistor NPN manufactured by onsemi, designed for RF applications requiring 20V collector-emitter breakdown voltage and 600MHz transition frequency. This component is classified as obsolete, necessitating identification of equivalent substitute parts for ongoing design requirements and production continuity. The through-hole TO-92S package and specific RF performance characteristics define the substitution criteria for this device.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	20V	V
Frequency - Transition	600MHz	MHz
Noise Figure (Typ @ f)	3dB ~ 5dB @ 100MHz	dB
Gain	18dB ~ 22dB	dB
Power - Max	250mW	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 1mA, 6V	—
Current - Collector (Ic) (Max)	20mA	mA
Operating Temperature (TJ)	150°C	°C
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3 Short Body	—

Substitute Part Grouping Explanation

Substitution of the KSC2786RTA is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: NPN polarity requirement
Collector-Emitter Breakdown Voltage: Minimum 20V capability
Transition Frequency: Minimum 600MHz performance
Maximum Collector Current: 20mA or greater
Operating Temperature: 150°C junction temperature capability
Noise Figure and Gain: RF performance characteristics within specified ranges

Secondary Considerations:

Mounting Type: Through-hole or surface-mount alternatives
Package compatibility with circuit board layout requirements
Product status and availability for production continuity

The BFR181WH6327XTSA1 from Infineon Technologies meets the core electrical requirements for NPN RF transistor substitution, with enhanced performance specifications exceeding the KSC2786RTA baseline parameters.

Parameter Comparison

Parameter	KSC2786RTA (onsemi)	BFR181WH6327XTSA1 (Infineon)	Unit
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	20V	12V	V
Frequency - Transition	600MHz	8GHz	MHz
Noise Figure (Typ @ f)	3dB ~ 5dB @ 100MHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	dB
Gain	18dB ~ 22dB	19dB	dB
Power - Max	250mW	175mW	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 1mA, 6V	70 @ 5mA, 8V	—
Current - Collector (Ic) (Max)	20mA	20mA	mA
Operating Temperature (TJ)	150°C	150°C	°C
Mounting Type	Through Hole	Surface Mount	—
Package / Case	TO-226-3, TO-92-3 Short Body	SC-70, SOT-323	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

Product Status Consideration: The KSC2786RTA is classified as obsolete, while the BFR181WH6327XTSA1 maintains active product status with 275,300 units in stock. This availability differential supports long-term design continuity and production planning.

Compliance and Certifications: Both components carry identical REACH Status (REACH Unaffected) and ECCN classification (EAR99). The BFR181WH6327XTSA1 includes RoHS3 compliance certification, providing additional regulatory alignment for modern manufacturing environments.

Electrical Performance: The BFR181WH6327XTSA1 demonstrates superior RF performance with 8GHz transition frequency versus 600MHz, and improved noise figure characteristics (0.9dB ~ 1.2dB versus 3dB ~ 5dB). The higher DC current gain (70 versus 40) supports improved circuit efficiency.

Voltage Rating Trade-off: The BFR181WH6327XTSA1 operates at 12V maximum collector-emitter breakdown voltage, compared to the KSC2786RTA 20V rating. Circuit designs operating above 12V require voltage regulation or alternative component selection.

Packaging Transition: The KSC2786RTA through-hole TO-92S package differs from the BFR181WH6327XTSA1 surface-mount SOT-323 package. PCB layout redesign is required for mechanical compatibility.

Frequently Asked Questions (FAQ)

Q: Can the BFR181WH6327XTSA1 directly replace the KSC2786RTA in existing circuit boards?

A: Direct PCB replacement is not possible due to different mounting technologies. The KSC2786RTA uses through-hole TO-92S packaging, while the BFR181WH6327XTSA1 requires surface-mount SOT-323 footprint. Circuit board redesign and re-layout are necessary.

Q: What is the voltage limitation when substituting with the BFR181WH6327XTSA1?

A: The BFR181WH6327XTSA1 has a maximum collector-emitter breakdown voltage of 12V, compared to the KSC2786RTA 20V rating. Circuits designed for operation above 12V require alternative component selection or voltage regulation implementation.

Q: Are there performance advantages to using the BFR181WH6327XTSA1?

A: The BFR181WH6327XTSA1 provides superior RF performance with 8GHz transition frequency (versus 600MHz), lower noise figure (0.9dB ~ 1.2dB versus 3dB ~ 5dB), and higher DC current gain (70 versus 40). These characteristics support improved signal-to-noise ratio and circuit efficiency in RF applications.

Q: What are the moisture sensitivity considerations for both components?

A: Both the KSC2786RTA and BFR181WH6327XTSA1 carry MSL Level 1 (Unlimited) classification, indicating no moisture sensitivity restrictions for storage and handling.

Q: Is the BFR181WH6327XTSA1 available in through-hole packaging?

A: The BFR181WH6327XTSA1 is available exclusively in surface-mount SOT-323 packaging. No through-hole variant is provided by Infineon Technologies for this part number.

Q: What compliance certifications apply to the BFR181WH6327XTSA1?

A: The BFR181WH6327XTSA1 is RoHS3 compliant and carries REACH Unaffected status. Both components share identical ECCN (EAR99) and HTSUS (8541.21.0075) classifications.

Q: How does the maximum power rating differ between these components?

A: The KSC2786RTA supports 250mW maximum power dissipation, while the BFR181WH6327XTSA1 is rated for 175mW. Circuit designs requiring power dissipation above 175mW require alternative component selection.

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