KSC2756RMTF Equivalent & Substitute Parts

Part Overview

The KSC2756RMTF is an RF transistor manufactured by onsemi, classified as an NPN bipolar junction transistor (BJT) designed for RF applications. This component operates at 850MHz transition frequency with a maximum collector-emitter breakdown voltage of 20V and maximum power dissipation of 150mW in a surface mount SOT-23-3 package. The product status is obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value
Manufacturer Part Number	KSC2756RMTF
Manufacturer	onsemi
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	850MHz
Power - Max	150mW
Current - Collector (Ic) (Max)	30mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Mounting Type	Surface Mount
Package / Case	SOT-23-3
Operating Temperature (TJ)	150°C
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution of the KSC2756RMTF is determined by compatibility across the following critical parameters: transistor type (NPN), maximum collector-emitter breakdown voltage, maximum collector current, maximum power dissipation, operating temperature range, and mounting type (surface mount). The transition frequency and gain characteristics are secondary considerations that influence application suitability but do not preclude substitution when primary electrical parameters are met or exceeded.

The substitute parts identified fall into distinct performance categories based on voltage rating, frequency capability, and current handling:

Category 1 - Higher Frequency, Lower Voltage Devices: BFP740FH6327XTSA1 and BFP760H6327XTSA1 (Infineon Technologies) operate at significantly higher frequencies (42GHz and 45GHz respectively) but feature reduced maximum collector-emitter breakdown voltages (4.7V and 4V respectively). These devices are suitable for applications where the 20V rating of the KSC2756RMTF is not required and higher frequency performance is beneficial.

Category 2 - Moderate Frequency, Moderate Voltage Device: HFA3102BZ (Renesas Electronics Corporation) operates at 10GHz with a 12V maximum collector-emitter breakdown voltage. This device represents a middle-ground option with moderate frequency and voltage characteristics.

Category 3 - High Power, High Voltage Device: MRF317 (MACOM Technology Solutions) is a chassis mount RF transistor with 35V maximum collector-emitter breakdown voltage and 12A maximum collector current, designed for 100W power dissipation. This device serves applications requiring significantly higher power and voltage handling than the KSC2756RMTF.

Parameter Comparison

Parameter	KSC2756RMTF (onsemi)	BFP740FH6327XTSA1 (Infineon)	BFP760H6327XTSA1 (Infineon)	HFA3102BZ (Renesas)	MRF317 (MACOM)
Transistor Type	NPN	NPN	NPN	6 NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	20V	4.7V	4V	12V	35V
Frequency - Transition	850MHz	42GHz	45GHz	10GHz	Not specified
Power - Max	150mW	160mW	240mW	250mW	100W
Current - Collector (Ic) (Max)	30mA	30mA	70mA	30mA	12A
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V	160 @ 25mA, 3V	160 @ 35mA, 3V	40 @ 10mA, 3V	10 @ 5A, 5V
Operating Temperature (TJ)	150°C	150°C	150°C	150°C	Not specified
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Chassis Mount
Package / Case	SOT-23-3	4-TSFP	SOT-343	14-SOIC	316-01
Product Status	Obsolete	Active	Active	Active	Active

Engineering Selection Recommendations

For Direct Voltage and Current Compatibility (20V Rating Requirement):

No substitute part in the provided list maintains the 20V collector-emitter breakdown voltage specification of the KSC2756RMTF. Applications requiring 20V operation cannot be directly substituted with the listed alternatives without circuit redesign.

For Lower Voltage Applications (Below 12V):

HFA3102BZ (Renesas Electronics Corporation) is the recommended substitute for applications operating below 12V. This device is active in product status, RoHS3 compliant, and maintains surface mount configuration. The 10GHz transition frequency exceeds the 850MHz requirement of the KSC2756RMTF, providing enhanced frequency performance. Maximum power dissipation of 250mW and maximum collector current of 30mA match or exceed the original specification.

For Ultra-High Frequency Applications (Below 5V):

BFP760H6327XTSA1 (Infineon Technologies) and BFP740FH6327XTSA1 (Infineon Technologies) are suitable for applications where voltage requirements are below 4.7V and high-frequency performance (42GHz to 45GHz) is required. Both devices are active in product status and RoHS3 compliant. BFP760H6327XTSA1 provides higher maximum collector current (70mA) and power dissipation (240mW) compared to BFP740FH6327XTSA1.

For High Power Applications (Above 150mW):

MRF317 (MACOM Technology Solutions) is designated for applications requiring power dissipation up to 100W and collector currents up to 12A. This device operates in chassis mount configuration and is not suitable for direct PCB surface mount replacement. MRF317 is active in product status and RoHS3 compliant.

Frequently Asked Questions (FAQ)

Q: Can BFP740FH6327XTSA1 or BFP760H6327XTSA1 directly replace KSC2756RMTF in existing designs?

A: Direct replacement is not possible without circuit redesign. Both Infineon devices operate at maximum collector-emitter breakdown voltages of 4.7V and 4V respectively, compared to the KSC2756RMTF specification of 20V. Applications designed for 20V operation require voltage regulation or circuit modification to operate with these lower-voltage devices.

Q: What is the primary difference between BFP740FH6327XTSA1 and BFP760H6327XTSA1?

A: BFP760H6327XTSA1 provides higher maximum collector current (70mA versus 30mA) and greater maximum power dissipation (240mW versus 160mW). BFP760H6327XTSA1 also features a wider gain range (16.5dB to 29dB versus 27.5dB fixed). Both devices operate at comparable transition frequencies (45GHz versus 42GHz).

Q: Is HFA3102BZ suitable for 850MHz applications?

A: HFA3102BZ operates at 10GHz transition frequency, which exceeds the 850MHz requirement. The device is suitable for 850MHz applications from a frequency perspective. However, the 12V maximum collector-emitter breakdown voltage must be verified against circuit voltage requirements.

Q: What are the package compatibility considerations?

A: KSC2756RMTF uses SOT-23-3 surface mount package. Substitute parts use different packages: BFP740FH6327XTSA1 (4-TSFP), BFP760H6327XTSA1 (SOT-343), HFA3102BZ (14-SOIC), and MRF317 (316-01 chassis mount). PCB layout and footprint modifications are required for any substitution.

Q: Are all substitute parts RoHS compliant?

A: BFP740FH6327XTSA1, BFP760H6327XTSA1, HFA3102BZ, and MRF317 are all RoHS3 compliant. All substitute parts are REACH unaffected and classified under EAR99 export control.

Q: What is the moisture sensitivity level (MSL) of substitute parts?

A: BFP740FH6327XTSA1, BFP760H6327XTSA1, and MRF317 are classified as MSL 1 (Unlimited). HFA3102BZ is classified as MSL 3 (168 Hours), requiring controlled storage and handling conditions.

Q: Can MRF317 replace KSC2756RMTF in surface mount applications?

A: No. MRF317 is a chassis mount device, not a surface mount component. It is designed for high-power applications requiring direct mounting to heat sinks or chassis structures. PCB integration is not applicable for this device.

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