KSC2682YS Equivalent & Substitute Parts

Part Overview

The KSC2682YS is an NPN bipolar junction transistor manufactured by onsemi, rated for 180 V collector-emitter breakdown voltage and 100 mA maximum collector current. This device is packaged in a TO-126-3 through-hole configuration and is designed for general-purpose switching and amplification applications requiring moderate voltage and current ratings.

The KSC2682YS is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing maintenance, repair, and production requirements for legacy systems utilizing this transistor.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	180	V
Current - Collector (Ic) (Max)	100	mA
Vce Saturation (Max)	500 mV @ 5 mA, 50 mA	—
DC Current Gain (hFE) (Min)	160 @ 10 mA, 5 V	—
Power - Max	1.2	W
Frequency - Transition	200	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-126-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the KSC2682YS is evaluated based on the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Voltage rating must equal or exceed 180 V collector-emitter breakdown voltage
Current rating must equal or exceed 100 mA maximum collector current
Power dissipation must equal or exceed 1.2 W
Mounting type must be through-hole configuration
Package must be compatible with TO-126-3 footprint

Mechanical Compatibility Criteria:

Through-hole mounting requirement
TO-126-3 or equivalent package footprint

The MJE340 meets the electrical and mechanical substitution criteria. This device provides higher voltage (300 V), higher current (500 mA), and significantly higher power dissipation (20 W) ratings, making it suitable for applications where the KSC2682YS is specified, provided circuit design accommodates the enhanced performance envelope.

Parameter Comparison

Parameter	KSC2682YS	MJE340	Unit
Manufacturer	onsemi	NTE Electronics, Inc	—
Transistor Type	NPN	NPN	—
Voltage - Collector Emitter Breakdown (Max)	180	300	V
Current - Collector (Ic) (Max)	100	500	mA
Power - Max	1.2	20	W
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-126-3	TO-126	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

KSC2682YS Status: Obsolete. This component is no longer manufactured by onsemi and is not recommended for new designs. Existing inventory is limited to 925 pieces.

MJE340 Status: Active production. This substitute is currently manufactured by NTE Electronics, Inc and maintains active product status with 1,957 pieces in stock. The MJE340 is classified as RoHS non-compliant; applications requiring RoHS compliance must evaluate alternative solutions.

Compliance Considerations:

KSC2682YS: REACH Unaffected, ECCN EAR99
MJE340: RoHS non-compliant, ECCN EAR99

For applications where the KSC2682YS is currently specified, the MJE340 provides electrical and mechanical compatibility with superior performance margins. The higher voltage and current ratings of the MJE340 ensure operation within safe design limits for legacy circuit implementations. Circuit validation is required to confirm that the enhanced performance characteristics do not introduce unintended operational changes.

Frequently Asked Questions (FAQ)

Q: Can the MJE340 directly replace the KSC2682YS in existing circuits?

A: The MJE340 is electrically and mechanically compatible with the KSC2682YS. Both devices are NPN transistors in TO-126 package configurations with through-hole mounting. The MJE340 provides higher voltage (300 V vs. 180 V), higher current (500 mA vs. 100 mA), and higher power dissipation (20 W vs. 1.2 W) ratings. Direct substitution is permissible in applications where these enhanced ratings do not cause circuit malfunction.

Q: What are the key differences between these two transistors?

A: The primary differences are performance ratings and product status. The MJE340 exceeds the KSC2682YS in all electrical parameters: voltage breakdown, maximum collector current, and power dissipation. The KSC2682YS is obsolete; the MJE340 is in active production. The MJE340 is RoHS non-compliant, whereas the KSC2682YS status is REACH Unaffected.

Q: Are the packages physically identical?

A: Both devices use TO-126 package configurations suitable for through-hole mounting. The KSC2682YS is specified as TO-126-3; the MJE340 is specified as TO-126. These packages are mechanically compatible for PCB footprint purposes.

Q: What is the DC current gain difference between these devices?

A: The KSC2682YS specifies a minimum DC current gain (hFE) of 160 at 10 mA and 5 V. The MJE340 specifies a minimum DC current gain of 30 at 50 mA and 10 V. These measurements are taken at different operating points, making direct comparison inappropriate. Circuit design must account for the actual operating conditions and the gain characteristics at those specific points.

Q: Is the MJE340 suitable for high-frequency applications?

A: The KSC2682YS specifies a transition frequency of 200 MHz. The MJE340 transition frequency is not provided in the available specifications. Applications requiring specific high-frequency performance must obtain detailed frequency response data from the manufacturer before substitution.

Q: What compliance certifications apply to each device?

A: Both devices are classified under ECCN EAR99. The KSC2682YS is REACH Unaffected. The MJE340 is RoHS non-compliant. Applications subject to RoHS requirements must evaluate alternative solutions or obtain RoHS-compliant variants if available.

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