KSC2682OS Equivalent & Substitute Parts

Part Overview

The KSC2682OS is an NPN bipolar junction transistor manufactured by onsemi, rated for 180 V collector-emitter breakdown voltage and 100 mA maximum collector current. This device is packaged in a TO-126-3 through-hole configuration and is designed for general-purpose switching and amplification applications requiring moderate voltage and current ratings.

The KSC2682OS is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing maintenance, repair, and production requirements for legacy systems and equipment utilizing this transistor.

Substiute Parts

KSC2682OS
onsemiIn Stock: 790KSC2682OS Datasheet
KSC2682OS
Current Part
MJE340
NTE Electronics, IncIn Stock: 2035MJE340 Datasheet
MJE340
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 180 V
Current - Collector (Ic) (Max) 100 mA
Vce Saturation (Max) 500 mV @ 5 mA, 50 mA
DC Current Gain (hFE) (Min) 100 @ 10 mA, 5 V
Power - Max 1.2 W
Frequency - Transition 200 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-126-3

Substitute Part Grouping Explanation

Substitution of the KSC2682OS is evaluated based on the following electrical and mechanical parameters:

Transistor Type: Both the main part and substitute must be NPN configuration to maintain circuit polarity and biasing requirements.

Voltage Rating: The substitute must support the maximum collector-emitter breakdown voltage required by the application. The KSC2682OS operates at 180 V maximum; substitutes with equal or higher voltage ratings are acceptable.

Current Rating: The substitute must support the maximum collector current of the application. The KSC2682OS is rated for 100 mA maximum; substitutes with equal or higher current ratings are acceptable.

Package / Case: The substitute must be compatible with the through-hole mounting footprint. The TO-126-3 package is the primary consideration for mechanical compatibility.

DC Current Gain (hFE): The substitute must provide sufficient current gain to support the intended biasing and switching characteristics of the circuit.

Power Dissipation: The substitute must support the maximum power dissipation requirements of the application.

The MJE340 meets the substitution criteria as an NPN transistor in a compatible TO-126 through-hole package with electrical ratings that exceed the KSC2682OS requirements.

Parameter Comparison

Parameter KSC2682OS MJE340 Unit
Manufacturer onsemi NTE Electronics, Inc
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 180 300 V
Current - Collector (Ic) (Max) 100 500 mA
DC Current Gain (hFE) (Min) 100 @ 10 mA, 5 V 30 @ 50 mA, 10 V
Power - Max 1.2 20 W
Mounting Type Through Hole Through Hole
Package / Case TO-126-3 TO-126
Product Status Obsolete Active

Engineering Selection Recommendations

The MJE340 is an active product manufactured by NTE Electronics, Inc, providing a viable substitute for the obsolete KSC2682OS. The MJE340 exceeds the electrical specifications of the KSC2682OS across all critical parameters: collector-emitter breakdown voltage (300 V vs. 180 V), maximum collector current (500 mA vs. 100 mA), and power dissipation (20 W vs. 1.2 W).

Both devices utilize compatible through-hole mounting packages (TO-126-3 and TO-126 respectively), enabling direct mechanical substitution in legacy circuit board designs.

The MJE340 is classified as RoHS non-compliant. The KSC2682OS carries REACH Unaffected status. Compliance requirements for the target application must be evaluated prior to component selection.

Both parts carry ECCN classification EAR99, indicating standard commercial export control status.

Frequently Asked Questions (FAQ)

Q: Can the MJE340 directly replace the KSC2682OS in all applications?

A: The MJE340 provides superior electrical ratings across voltage, current, and power parameters, making it suitable for applications designed for the KSC2682OS. However, the lower DC current gain of the MJE340 (30 @ 50 mA, 10 V vs. 100 @ 10 mA, 5 V) may require circuit biasing adjustments in applications dependent on specific gain characteristics.

Q: Are the TO-126-3 and TO-126 packages mechanically identical?

A: Both packages are through-hole TO-126 variants with compatible lead configurations and mounting footprints. Direct mechanical substitution is supported.

Q: What is the significance of the KSC2682OS being classified as obsolete?

A: Obsolete status indicates the part is no longer manufactured or supported by the original supplier. Substitute components must be identified to maintain supply continuity for repair and production activities.

Q: Does the MJE340 meet the same compliance standards as the KSC2682OS?

A: The MJE340 is RoHS non-compliant, while the KSC2682OS is REACH Unaffected. Applications with specific regulatory requirements must evaluate compliance status independently.

Q: What is the primary advantage of the MJE340 as a substitute?

A: The MJE340 is an active product with higher electrical ratings and greater availability, providing long-term supply security for applications requiring NPN transistors in the TO-126 package.

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