KSC2335YTU Equivalent & Substitute Parts

Part Overview

The KSC2335YTU is an NPN bipolar junction transistor manufactured by onsemi, rated for 400 V collector-emitter breakdown voltage and 7 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of active equivalent parts for ongoing design requirements and procurement needs. Substitute parts must maintain electrical compatibility within the specified voltage and current ratings while accommodating the through-hole mounting configuration.

Key Parameters

Parameter	KSC2335YTU
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V
Current - Collector (Ic) (Max)	7 A
Power - Max	1.5 W
Vce Saturation (Max) @ Ib, Ic	1 V @ 600 mA, 3 A
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 1 A, 5 V
Current - Collector Cutoff (Max)	10 µA
Operating Temperature (TJ)	150°C
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Obsolete

Substitute Part Grouping Explanation

Substitution eligibility for the KSC2335YTU is determined by the following critical parameters:

Voltage Rating: Substitute parts must have a collector-emitter breakdown voltage (VCEO) equal to or greater than 400 V to maintain voltage margin in the application circuit.

Current Rating: Substitute parts must have a maximum collector current (Ic) equal to or greater than 7 A to support the load requirements.

Package Configuration: All substitute parts must use through-hole mounting in TO-220-3 or compatible TO-220 package variants to ensure mechanical and electrical compatibility with existing PCB layouts.

Transistor Polarity: All substitutes must be NPN-type transistors to maintain circuit functionality.

The following parts meet these substitution criteria:

ST13007 (STMicroelectronics): 400 V, 8 A, TO-220, Active status
ST13007D (STMicroelectronics): 400 V, 8 A, TO-220, Active status
BUJ105A,127 (WeEn Semiconductors): 400 V, 8 A, TO-220AB, Active status
MJE18008G (onsemi): 450 V, 8 A, TO-220, Active status

Parameter Comparison

Parameter	KSC2335YTU	ST13007	ST13007D	BUJ105A,127	MJE18008G
Manufacturer	onsemi	STMicroelectronics	STMicroelectronics	WeEn Semiconductors	onsemi
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	400 V	400 V	400 V	400 V	450 V
Current - Collector (Ic) (Max)	7 A	8 A	8 A	8 A	8 A
Power - Max	1.5 W	80 W	80 W	80 W	125 W
Vce Saturation (Max) @ Ib, Ic	1 V @ 600 mA, 3 A	3 V @ 2 A, 8 A	2 V @ 2 A, 8 A	1 V @ 800 mA, 4 A	700 mV @ 900 mA, 4.5 A
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 1 A, 5 V	5 @ 5 A, 5 V	8 @ 5 A, 5 V	13 @ 500 mA, 5 V	14 @ 1 A, 5 V
Current - Collector Cutoff (Max)	10 µA	10 µA	100 µA	100 µA	100 µA
Operating Temperature (TJ)	150°C	150°C	150°C	150°C	-65°C ~ 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	ROHS3 Compliant

Engineering Selection Recommendations

ST13007D is the primary recommended substitute. This part is manufactured by STMicroelectronics with active product status, ROHS3 compliance, and extensive inventory availability (680,200 units in stock). The ST13007D meets all minimum electrical requirements with 400 V breakdown voltage and 8 A collector current rating. The device operates across the full 150°C temperature range and maintains TO-220-3 package compatibility.

ST13007 serves as an alternative from STMicroelectronics with identical voltage and current ratings. This variant is also ROHS3 compliant and active, with 1,218 units in stock. Selection between ST13007 and ST13007D depends on application-specific requirements regarding saturation voltage characteristics.

BUJ105A,127 is a WeEn Semiconductors option meeting the 400 V and 8 A specifications with RoHS compliance and active status. This part provides 80 W power dissipation capability and is available in TO-220AB package configuration.

MJE18008G is an onsemi alternative offering enhanced voltage rating (450 V) and power dissipation (125 W) with extended operating temperature range (-65°C to 150°C). This part is ROHS3 compliant and active, with 8,097 units in stock. The MJE18008G is suitable for applications requiring higher voltage margin or improved thermal performance.

All recommended substitutes are active products with current manufacturing status, ensuring long-term availability and supply chain continuity compared to the obsolete KSC2335YTU.

Frequently Asked Questions (FAQ)

Q: Can the ST13007D directly replace the KSC2335YTU in existing designs?

A: Yes. The ST13007D meets all critical electrical parameters: 400 V minimum breakdown voltage, 8 A collector current (exceeding the 7 A requirement), and TO-220-3 package compatibility. The device operates at the same maximum junction temperature (150°C) and maintains NPN polarity. Direct PCB substitution is supported without circuit modification.

Q: What is the significance of the higher power rating in substitute parts?

A: Substitute parts such as ST13007D (80 W) and MJE18008G (125 W) have substantially higher power dissipation ratings than the KSC2335YTU (1.5 W). This difference reflects improved thermal design and packaging in modern devices. Higher power ratings provide additional thermal margin and do not negatively impact circuit operation; they indicate enhanced capability for heat management.

Q: Are there differences in saturation voltage between the KSC2335YTU and substitutes?

A: Yes. The KSC2335YTU exhibits 1 V saturation voltage at 600 mA base current and 3 A collector current. Substitute parts show variation: ST13007D at 2 V (2 A base, 8 A collector), BUJ105A,127 at 1 V (800 mA base, 4 A collector), and MJE18008G at 700 mV (900 mA base, 4.5 A collector). Applications sensitive to saturation voltage must evaluate the specific substitute against circuit requirements.

Q: What is the difference between TO-220 and TO-220AB package designations?

A: Both TO-220 and TO-220AB are through-hole packages with identical pin configurations and mechanical compatibility. The TO-220AB designation indicates a specific variant with standardized lead spacing. All substitute parts listed maintain mechanical and electrical compatibility with TO-220-3 PCB layouts.

Q: Why do substitute parts have lower DC current gain (hFE) values?

A: The KSC2335YTU specifies hFE minimum of 40 at 1 A and 5 V. Substitute parts exhibit lower hFE values (ST13007D at 8, BUJ105A,127 at 13, MJE18008G at 14) measured at higher collector currents (5 A or 4.5 A). This reflects different transistor design characteristics optimized for higher current operation. Circuit designs must account for actual hFE values during base drive calculations.

Q: Is the MJE18008G suitable for applications requiring extended temperature operation?

A: The MJE18008G operates across -65°C to 150°C, compared to the KSC2335YTU and other substitutes limited to 150°C maximum. This extended lower temperature range is beneficial for applications in cold environments or equipment requiring wide operating temperature specifications. The higher voltage rating (450 V) provides additional design margin.

Q: What compliance certifications should be verified for new designs?

A: All active substitute parts carry ROHS3 or RoHS compliance certification, meeting current environmental regulations. The KSC2335YTU carries no specified RoHS status due to obsolete classification. New designs should specify ROHS3-compliant substitutes (ST13007, ST13007D, or MJE18008G) to ensure regulatory compliance and supply chain continuity.

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