KSC2334RTU Equivalent & Substitute Parts

Part Overview

The KSC2334RTU is an NPN bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 7 A maximum collector current in a TO-220-3 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. The part delivers 1.5 W maximum power dissipation with a saturation voltage of 600 mV at 500 mA base current and 5 A collector current.

Substiute Parts

KSC2334RTU
onsemiIn Stock: 1030KSC2334RTU Datasheet
KSC2334RTU
Current Part
BD243CG
onsemiIn Stock: 1618BD243CG Datasheet
BD243CG
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KSC2334Y
Fairchild SemiconductorIn Stock: 1367KSC2334Y Datasheet
KSC2334Y
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KSC2334YTU
onsemiIn Stock: 1507KSC2334YTU Datasheet
KSC2334YTU
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TIP29CG
onsemiIn Stock: 1664TIP29CG Datasheet
TIP29CG
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TIP31CG
onsemiIn Stock: 6765TIP31CG Datasheet
TIP31CG
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TIP41C
NTE Electronics, IncIn Stock: 105158TIP41C Datasheet
TIP41C
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 100 V
Current - Collector (Ic) (Max) 7 A
Power - Max 1.5 W
Vce Saturation (Max) @ Ib, Ic 600 mV @ 500 mA, 5 A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 3 A, 5 V
Current - Collector Cutoff (Max) 10 µA
Operating Temperature (Max) 150 °C
Package / Case TO-220-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the KSC2334RTU is determined by strict equivalence across the following electrical and mechanical parameters: transistor type (NPN), collector-emitter breakdown voltage (100 V), maximum collector current rating, power dissipation capability, package type (TO-220-3), and mounting method (through hole). Substitute parts are grouped into two categories based on current-handling capacity and product status.

Category 1: Direct Electrical Equivalents (7 A Collector Current) Parts meeting or exceeding the 7 A collector current specification with matching 100 V breakdown voltage and TO-220-3 packaging. These parts maintain functional equivalence for applications requiring the full 7 A current rating.

Category 2: Reduced Current Substitutes (3 A to 6 A Collector Current) Parts with collector current ratings below 7 A but maintaining 100 V breakdown voltage and TO-220-3 packaging. These parts are suitable for applications where the full 7 A current is not required.

Parameter Comparison

Part Number Manufacturer Ic (Max) [A] Vce Breakdown (Max) [V] Power (Max) [W] Vce Sat (Max) [mV] hFE (Min) Package Product Status
KSC2334RTU onsemi 7 100 1.5 600 40 TO-220-3 Obsolete
KSC2334YTU onsemi 7 100 1.5 600 120 TO-220-3 Active
KSC2334Y Fairchild Semiconductor 7 100 1.5 600 120 TO-220-3 Active
BD243CG onsemi 6 100 65 1500 15 TO-220-3 Active
TIP41C NTE Electronics, Inc 6 100 2 1500 15 TO-220-3 Active
TIP31CG onsemi 3 100 2 1200 10 TO-220-3 Active
TIP29CG onsemi 1 100 2 700 15 TO-220-3 Active

Engineering Selection Recommendations

Primary Substitutes (Direct Equivalents)

KSC2334YTU and KSC2334Y are direct functional equivalents to the KSC2334RTU, maintaining identical electrical specifications: 7 A maximum collector current, 100 V breakdown voltage, 1.5 W power rating, and 600 mV saturation voltage at rated conditions. Both parts are in active product status. KSC2334YTU is manufactured by onsemi with RoHS3 compliance and REACH unaffected status. KSC2334Y is manufactured by Fairchild Semiconductor and maintains the same electrical performance. These parts provide seamless substitution for applications requiring the full 7 A current specification.

Secondary Substitutes (Reduced Current Capacity)

BD243CG and TIP41C are suitable for applications where collector current does not exceed 6 A. Both maintain 100 V breakdown voltage and TO-220-3 packaging. BD243CG is manufactured by onsemi with 65 W power rating and RoHS3 compliance. TIP41C is manufactured by NTE Electronics, Inc with 2 W power rating and RoHS3 compliance. These parts are appropriate for designs with current requirements below 7 A.

TIP31CG is suitable for applications limited to 3 A collector current, maintaining 100 V breakdown voltage and TO-220-3 packaging with active product status and RoHS3 compliance.

TIP29CG is limited to 1 A collector current and is appropriate only for low-current applications within the 100 V breakdown voltage specification.

Frequently Asked Questions (FAQ)

Q: Can KSC2334YTU directly replace KSC2334RTU in all applications?

A: Yes. KSC2334YTU maintains identical electrical specifications: 7 A maximum collector current, 100 V breakdown voltage, 1.5 W power dissipation, and 600 mV saturation voltage at rated conditions. The primary difference is product status (active versus obsolete) and packaging format (tube versus unspecified). Both are NPN transistors in TO-220-3 packages suitable for through-hole mounting.

Q: What is the difference between KSC2334YTU and KSC2334Y?

A: Both parts share identical electrical specifications and package type (TO-220-3). KSC2334YTU is manufactured by onsemi, while KSC2334Y is manufactured by Fairchild Semiconductor. Both are in active product status. Selection between these parts depends on supplier availability and procurement requirements.

Q: Can BD243CG or TIP41C be used as substitutes for the KSC2334RTU?

A: BD243CG and TIP41C are suitable substitutes only for applications where collector current does not exceed 6 A. Both maintain 100 V breakdown voltage and TO-220-3 packaging. However, saturation voltage is higher (1500 mV versus 600 mV), which may affect circuit performance in saturation-mode applications. These parts are appropriate for reduced-current designs.

Q: What is the significance of the TO-220-3 package specification?

A: TO-220-3 is a through-hole package with three leads (collector, base, emitter) suitable for PCB mounting with mechanical fastening. All listed substitute parts maintain this package type, ensuring mechanical and electrical compatibility with existing PCB layouts and thermal management solutions.

Q: Why is the hFE (DC Current Gain) specification different between KSC2334RTU and KSC2334YTU?

A: KSC2334RTU specifies minimum hFE of 40 at 3 A and 5 V, while KSC2334YTU specifies minimum hFE of 120 at the same conditions. Both values fall within acceptable ranges for NPN transistor operation. The higher hFE in KSC2334YTU indicates improved current amplification characteristics. Circuit designs should verify that base drive requirements are compatible with the selected part's hFE specification.

Q: Are all substitute parts RoHS3 compliant?

A: KSC2334YTU, KSC2334Y, BD243CG, TIP41C, TIP31CG, and TIP29CG are all RoHS3 compliant. The original KSC2334RTU does not specify RoHS status. RoHS3 compliance is relevant for applications subject to environmental regulations in the European Union and equivalent jurisdictions.

Q: What is the maximum operating temperature for these transistors?

A: KSC2334RTU, KSC2334YTU, and KSC2334Y specify 150°C maximum junction temperature. BD243CG, TIP41C, TIP31CG, and TIP29CG also specify 150°C maximum junction temperature. Operating temperature range for TIP29CG, TIP31CG, and TIP41C extends from −65°C to 150°C. All parts are suitable for industrial temperature applications within these specifications.

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