KSC1730YBU Equivalent & Substitute Parts

Part Overview

The KSC1730YBU is an RF transistor manufactured by onsemi, classified as a bipolar NPN transistor designed for RF applications. This component operates at a transition frequency of 1.1GHz with a maximum collector-emitter breakdown voltage of 15V and maximum power dissipation of 250mW. The device is packaged in a through-hole TO-92-3 configuration.

The KSC1730YBU is currently listed as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support legacy system maintenance or redesign efforts where component sourcing becomes critical.

Substiute Parts

KSC1730YBU
onsemiIn Stock: 786KSC1730YBU Datasheet
KSC1730YBU
Current Part
BFP760H6327XTSA1
Infineon TechnologiesIn Stock: 800347BFP760H6327XTSA1 Datasheet
BFP760H6327XTSA1
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 15V V
Frequency - Transition 1.1GHz GHz
Power - Max 250mW mW
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 10V
Current - Collector (Ic) (Max) 50mA mA
Operating Temperature (TJ) 150°C °C
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitution of the KSC1730YBU requires evaluation based on the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • Transistor type must be NPN
  • Voltage rating must meet or exceed the application requirement (15V maximum collector-emitter breakdown voltage)
  • Frequency capability must support the operating frequency range (1.1GHz transition frequency)
  • Power dissipation capability must accommodate circuit requirements (250mW maximum)
  • DC current gain and maximum collector current must be compatible with circuit biasing and load conditions

Mechanical Compatibility Criteria:

  • Mounting type and package configuration must be compatible with the PCB layout and assembly process
  • Pin configuration must match or be adaptable to existing circuit connections

The substitute part BFP760H6327XTSA1 is identified as an equivalent based on shared NPN transistor topology and RF application classification. However, this substitute exhibits significant differences in electrical specifications and physical packaging that must be evaluated for specific application requirements.

Parameter Comparison

Parameter KSC1730YBU (Main Part) BFP760H6327XTSA1 (Substitute) Unit
Manufacturer onsemi Infineon Technologies
Transistor Type NPN NPN
Product Status Obsolete Active
Voltage - Collector Emitter Breakdown (Max) 15V 4V V
Frequency - Transition 1.1GHz 45GHz GHz
Power - Max 250mW 240mW mW
DC Current Gain (hFE) (Min) 120 @ 5mA, 10V 160 @ 35mA, 3V
Current - Collector (Ic) (Max) 50mA 70mA mA
Operating Temperature (TJ) 150°C 150°C °C
Mounting Type Through Hole Surface Mount
Package / Case TO-92-3 SOT-343

Engineering Selection Recommendations

Product Status Consideration: The KSC1730YBU is classified as obsolete, while BFP760H6327XTSA1 is active and in production. Active product status ensures ongoing availability and manufacturing support.

Compliance and Certification: Both components are REACH Unaffected and classified under ECCN EAR99. The BFP760H6327XTSA1 carries RoHS3 compliance certification, providing additional environmental and regulatory alignment with modern manufacturing standards.

Electrical Parameter Divergence: The substitute part exhibits a significantly lower maximum collector-emitter breakdown voltage (4V versus 15V). This represents a critical limitation for applications requiring higher voltage operation. The substitute operates at substantially higher transition frequency (45GHz versus 1.1GHz), which exceeds the frequency requirements of the original design but does not create incompatibility for lower-frequency applications.

Packaging and Assembly Impact: The original part uses through-hole TO-92-3 packaging, while the substitute uses surface-mount SOT-343 packaging. This difference requires PCB redesign and assembly process modification. Direct mechanical substitution is not possible without circuit board layout changes.

Selection Basis: Selection of BFP760H6327XTSA1 as a substitute is appropriate only for applications where the 4V voltage rating is sufficient, surface-mount assembly is feasible, and the higher frequency capability does not introduce design complications. Applications requiring the original 15V rating or through-hole mounting require alternative sourcing strategies.

Frequently Asked Questions (FAQ)

Q: Can the BFP760H6327XTSA1 directly replace the KSC1730YBU in an existing circuit?

A: Direct replacement is not possible due to two primary factors: the substitute has a maximum collector-emitter breakdown voltage of 4V compared to the original 15V, and the packaging differs (surface-mount SOT-343 versus through-hole TO-92-3). Circuit redesign and PCB layout modification are required.

Q: What is the primary limitation of using BFP760H6327XTSA1 as a substitute?

A: The maximum collector-emitter breakdown voltage of 4V is significantly lower than the original 15V specification. Applications operating above 4V will experience device failure. Verify that your circuit operates within the 4V maximum rating before substitution.

Q: Are there packaging compatibility issues between these parts?

A: Yes. The KSC1730YBU uses through-hole TO-92-3 packaging for manual or wave soldering assembly. The BFP760H6327XTSA1 uses surface-mount SOT-343 packaging requiring reflow soldering and different PCB footprints. Assembly process and board design changes are mandatory.

Q: Does the higher transition frequency of the substitute create problems?

A: The substitute operates at 45GHz transition frequency compared to the original 1.1GHz. For applications operating at or below 1.1GHz, the higher frequency capability does not create incompatibility. However, verify that the higher frequency response does not introduce unintended circuit behavior in your specific application.

Q: What compliance advantages does the substitute offer?

A: The BFP760H6327XTSA1 carries RoHS3 compliance certification and is an active product in production. The original KSC1730YBU is obsolete. Active product status ensures supply chain continuity and manufacturing support.

Q: Should I consider alternative parts instead of this substitute?

A: If your application requires the original 15V collector-emitter breakdown voltage or through-hole packaging, alternative NPN RF transistors with matching specifications should be evaluated. The BFP760H6327XTSA1 is suitable only for applications compatible with 4V maximum voltage operation and surface-mount assembly.

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