KSC1675RBU Equivalent & Substitute Parts

Part Overview

The KSC1675RBU is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector current of 50 mA, collector-emitter breakdown voltage of 30 V, and maximum power dissipation of 250 mW in a Through Hole TO-92-3 package.

The KSC1675RBU is classified as obsolete. Locating equivalent or substitute components is necessary to support ongoing maintenance, repair, and new design requirements where this part is specified or functionally required.

Substiute Parts

KSC1675RBU

onsemiIn Stock: 737KSC1675RBU Datasheet

Current PartRFQ

ZTX849

Diodes IncorporatedIn Stock: 15897ZTX849 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the KSC1675RBU is determined by electrical and mechanical compatibility within the following parameters:

Electrical Compatibility Criteria:

• Transistor Type: NPN (required match)
• Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 30 V
• Current - Collector (Ic) (Max): Must equal or exceed 50 mA
• Power - Max: Must equal or exceed 250 mW
• DC Current Gain (hFE): Must meet or exceed minimum specification of 40

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole (required match)
• Package / Case: TO-92-3 or TO-92 compatible package

The ZTX849 meets all electrical requirements with superior ratings in collector current (5 A), power dissipation (1.2 W), and DC current gain (100 @ 1A, 1V). The ZTX849 is housed in an E-Line package, which is specified as TO-92 compatible, satisfying mechanical substitution requirements.

Parameter Comparison

Engineering Selection Recommendations

ZTX849 as Substitute for KSC1675RBU:

The ZTX849 is an active product manufactured by Diodes Incorporated and is electrically and mechanically compatible with the KSC1675RBU. The ZTX849 exceeds all maximum electrical ratings of the KSC1675RBU, providing superior performance margins in collector current capacity, power dissipation, and DC current gain. The E-Line package is specified as TO-92 compatible, ensuring mechanical interchangeability in Through Hole applications.

The ZTX849 is RoHS3 Compliant and carries REACH Unaffected status, meeting current regulatory requirements. The active product status of the ZTX849 ensures ongoing availability and supply chain continuity compared to the obsolete KSC1675RBU.

Frequently Asked Questions (FAQ)

Q: Can the ZTX849 directly replace the KSC1675RBU in existing designs?

A: Yes. The ZTX849 meets all electrical requirements (NPN type, 30 V breakdown voltage, 50 mA minimum collector current, 250 mW minimum power dissipation) and is housed in a TO-92 compatible package suitable for Through Hole mounting. The superior electrical ratings of the ZTX849 provide additional performance margin.

Q: What are the key differences between these two transistors?

A: The ZTX849 provides higher collector current capacity (5 A versus 50 mA), greater power dissipation capability (1.2 W versus 250 mW), and higher DC current gain (100 versus 40). The KSC1675RBU operates at higher transition frequency (300 MHz versus 100 MHz). The ZTX849 is an active product, while the KSC1675RBU is obsolete.

Q: Are there package compatibility concerns?

A: The KSC1675RBU uses a TO-92-3 package, and the ZTX849 uses an E-Line package specified as TO-92 compatible. Both are Through Hole packages with three leads. Physical dimensions and pinout compatibility should be verified for specific PCB layouts, though both packages are standard Through Hole configurations.

Q: What compliance certifications apply to the ZTX849?

A: The ZTX849 is RoHS3 Compliant and REACH Unaffected. Both devices carry ECCN EAR99 classification and are subject to HTSUS code 8541.29.0075 (ZTX849) and 8541.21.0075 (KSC1675RBU).

Q: Is the ZTX849 suitable for high-frequency applications?

A: The ZTX849 operates at 100 MHz transition frequency, which is lower than the KSC1675RBU (300 MHz). For applications requiring operation above 100 MHz, the frequency difference must be evaluated against specific circuit requirements.