KSB772YSTSTU Equivalent & Substitute Parts

Part Overview

The KSB772YSTSTU is a PNP bipolar junction transistor manufactured by onsemi, rated for 30 V collector-emitter breakdown voltage and 3 A maximum collector current. This device is packaged in TO-126-3 through-hole configuration and is designed for general-purpose switching and amplification applications requiring 1 W power dissipation capability.

The KSB772YSTSTU carries an obsolete product status. Substitute parts are necessary to maintain design continuity and ensure component availability for new production builds, repairs, and system upgrades where this transistor is specified.

Substiute Parts

KSB772YSTSTU
onsemiIn Stock: 726KSB772YSTSTU Datasheet
KSB772YSTSTU
Current Part
KSB772YS
Fairchild SemiconductorIn Stock: 28228KSB772YS Datasheet
KSB772YS
Direct
KSB772YSTU
Fairchild SemiconductorIn Stock: 19295KSB772YSTU Datasheet
KSB772YSTU
Parametric Equivalent

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 1 µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A, 2V
Power - Max 1 W
Frequency - Transition 80 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-126-3

Substitute Part Grouping Explanation

Substitute parts for the KSB772YSTSTU are qualified based on electrical and mechanical parameter equivalence. All substitute devices must satisfy the following criteria:

Electrical Parameters (Required Match):

  • Transistor Type: PNP
  • Maximum Collector Current (Ic): 3 A
  • Maximum Collector-Emitter Breakdown Voltage: 30 V
  • Vce Saturation: 500mV @ 200mA, 2A
  • Maximum Collector Cutoff Current (ICBO): 1 µA
  • Minimum DC Current Gain (hFE): 160 @ 1A, 2V
  • Maximum Power Dissipation: 1 W
  • Transition Frequency: 80 MHz
  • Maximum Operating Temperature: 150°C

Mechanical Parameters (Required Match):

  • Mounting Type: Through Hole
  • Package / Case: TO-126-3

The following substitute parts meet all specified electrical and mechanical parameters and are therefore direct functional equivalents:

  1. KSB772YS (Fairchild Semiconductor) — Direct manufacturer equivalent
  2. KSB772YSTU (Fairchild Semiconductor) — Parametric equivalent

Parameter Comparison

Parameter KSB772YSTSTU (onsemi) KSB772YS (Fairchild) KSB772YSTU (Fairchild)
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A 500mV @ 200mA, 2A 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 1 µA (ICBO) 1 µA (ICBO) 1 µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A, 2V 160 @ 1A, 2V 160 @ 1A, 2V
Power - Max 1 W 1 W 1 W
Frequency - Transition 80 MHz 80 MHz 80 MHz
Operating Temperature (TJ) 150°C 150°C 150°C
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-126-3 TO-126-3 TO-126-3
Product Status Obsolete Active Active

Engineering Selection Recommendations

KSB772YS (Fairchild Semiconductor) is a direct manufacturer equivalent with active product status. This part carries identical electrical specifications and mechanical packaging to the KSB772YSTSTU. Selection of this substitute is appropriate for applications requiring immediate component availability and long-term supply continuity.

KSB772YSTU (Fairchild Semiconductor) is a parametric equivalent with active product status. This part satisfies all electrical and mechanical requirements specified for the KSB772YSTSTU. Selection of this substitute is appropriate for designs requiring component interchangeability with verified performance characteristics.

Both substitute parts are manufactured by Fairchild Semiconductor and maintain active product status, ensuring ongoing availability and manufacturing support. The KSB772YSTSTU original part is obsolete and should be replaced with either substitute for new designs and production applications.

Frequently Asked Questions (FAQ)

Q: Can KSB772YS and KSB772YSTU be used interchangeably with KSB772YSTSTU?

A: Yes. Both substitute parts satisfy all electrical parameters (collector current, breakdown voltage, saturation voltage, current gain, power dissipation, and transition frequency) and mechanical parameters (through-hole mounting, TO-126-3 package) specified for the KSB772YSTSTU. Direct substitution is supported without circuit modification.

Q: What is the difference between KSB772YS and KSB772YSTU?

A: Both parts are manufactured by Fairchild Semiconductor and meet identical electrical and mechanical specifications. The designation difference reflects internal Fairchild part numbering conventions. Both are functionally equivalent for the KSB772YSTSTU application.

Q: Why is the KSB772YSTSTU listed as obsolete?

A: The KSB772YSTSTU carries obsolete product status from onsemi. Substitute parts with active status (KSB772YS and KSB772YSTU from Fairchild Semiconductor) are available to ensure continued component supply and design continuity.

Q: Are there any package or pinout differences between these parts?

A: No. All three parts use identical TO-126-3 through-hole packaging with the same pinout configuration. Direct mechanical substitution is supported without PCB modification.

Q: What compliance certifications apply to these substitute parts?

A: Both KSB772YS and KSB772YSTU carry ECCN EAR99 classification and are REACH unaffected or REACH compliant, consistent with regulatory requirements for semiconductor components in this category.

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