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KSA992PBU Equivalent & Substitute Parts
Part Overview
The KSA992PBU is a Bipolar (BJT) Transistor with PNP configuration manufactured by onsemi. This component is rated for 120 V collector-emitter breakdown voltage with a maximum collector current of 50 mA and 500 mW power dissipation. The device features a transition frequency of 100 MHz and is housed in a Through Hole TO-92-3 package.
The KSA992PBU is classified as an Obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this transistor.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 6V |
| Power - Max | 500 mW |
| Frequency - Transition | 100 MHz |
| Operating Temperature (TJ) | 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Substitute Part Grouping Explanation
Substitute parts for the KSA992PBU are identified based on electrical and mechanical parameter equivalence. The substitution criteria are strictly limited to the following parameters:
- Transistor Type: PNP configuration
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Power - Max: 500 mW
- Frequency - Transition: 100 MHz
- Operating Temperature (TJ): 150°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Parts meeting these electrical and mechanical specifications are classified as direct substitutes. The KSA992FBU meets all specified parameters and is therefore a valid equivalent part.
Parameter Comparison
| Parameter | KSA992PBU | KSA992FBU |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Transistor Type | PNP | PNP |
| Current - Collector (Ic) (Max) | 50 mA | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V | 120 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 1µA | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 6V | 300 @ 1mA, 6V |
| Power - Max | 500 mW | 500 mW |
| Frequency - Transition | 100 MHz | 100 MHz |
| Operating Temperature (TJ) | 150°C | 150°C |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) |
| Product Status | Obsolete | Active |
| REACH Status | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 |
Engineering Selection Recommendations
The KSA992FBU is a direct electrical and mechanical equivalent to the KSA992PBU. Both parts share identical electrical specifications across all critical parameters including collector current, breakdown voltage, saturation characteristics, power rating, and frequency response.
The KSA992FBU holds Active product status, ensuring ongoing availability and supply chain support. The KSA992PBU is classified as Obsolete, making the KSA992FBU the appropriate selection for new designs and ongoing production requirements.
Both parts maintain REACH Unaffected status and EAR99 export classification. The KSA992FBU carries RoHS3 compliance certification, providing additional regulatory alignment for applications subject to environmental standards.
The DC Current Gain (hFE) specification for the KSA992FBU is 300 @ 1mA, 6V, which exceeds the minimum requirement of 200 @ 1mA, 6V specified for the KSA992PBU. This higher gain value does not compromise compatibility and may provide improved performance characteristics in applications sensitive to current amplification.
Frequently Asked Questions (FAQ)
Q: Can the KSA992FBU be used as a direct replacement for the KSA992PBU?
A: Yes. The KSA992FBU meets all electrical and mechanical specifications of the KSA992PBU. Both parts are PNP transistors with identical maximum ratings for collector current (50 mA), breakdown voltage (120 V), power dissipation (500 mW), and transition frequency (100 MHz). Both are housed in the TO-92-3 Through Hole package.
Q: What is the difference between the KSA992PBU and KSA992FBU?
A: The primary differences are product status and DC Current Gain specification. The KSA992PBU is Obsolete, while the KSA992FBU is Active. The KSA992FBU specifies a minimum DC Current Gain of 300 @ 1mA, 6V, compared to 200 @ 1mA, 6V for the KSA992PBU. All other electrical and mechanical parameters are identical.
Q: Are there packaging differences between these parts?
A: No. Both the KSA992PBU and KSA992FBU use the same Through Hole TO-92-3 package configuration (TO-226-3, TO-92-3 (TO-226AA)). They are mechanically interchangeable.
Q: Why should I select the KSA992FBU over the KSA992PBU?
A: The KSA992FBU is the recommended selection because it maintains Active product status, ensuring long-term availability and supply chain continuity. The KSA992PBU is Obsolete and subject to discontinuation. The KSA992FBU also carries RoHS3 compliance certification.
Q: Are there any compliance or regulatory differences?
A: Both parts maintain REACH Unaffected status and EAR99 export classification. The KSA992FBU carries RoHS3 compliance certification, while the KSA992PBU does not specify RoHS status. Both parts are suitable for applications requiring REACH compliance.
Q: Can I use the KSA992FBU in existing designs without circuit modifications?
A: Yes. The KSA992FBU is electrically and mechanically equivalent to the KSA992PBU. No circuit modifications are required. The higher DC Current Gain of the KSA992FBU does not introduce compatibility issues and may improve performance in gain-sensitive applications.
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