KSA1406CSTU Equivalent & Substitute Parts

Part Overview

The KSA1406CSTU is a PNP bipolar junction transistor manufactured by onsemi, rated for 200 V collector-emitter breakdown voltage and 100 mA maximum collector current. This device is packaged in a TO-126-3 through-hole configuration and is designed for general-purpose switching and amplification applications. The KSA1406CSTU is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and production continuity.

Substiute Parts

KSA1406CSTU
onsemiIn Stock: 2352KSA1406CSTU Datasheet
KSA1406CSTU
Current Part
MJE350
STMicroelectronicsIn Stock: 6480MJE350 Datasheet
MJE350
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Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 200 V
Current - Collector (Ic) (Max) 100 mA
Power - Max 1.2 W
DC Current Gain (hFE) (Min) 40 @ 10mA, 10V
Frequency - Transition 400 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-126-3

Substitute Part Grouping Explanation

Substitution of the KSA1406CSTU is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor polarity must be PNP
  • Collector-emitter breakdown voltage must equal or exceed 200 V
  • Maximum collector current must equal or exceed 100 mA
  • Power dissipation capability must equal or exceed 1.2 W
  • Mounting type must be through-hole
  • Package footprint must be compatible with TO-126-3 or equivalent land pattern

Secondary Compatibility Factors:

  • DC current gain (hFE) characteristics
  • Operating temperature range
  • Transition frequency performance
  • Collector cutoff current (ICBO) specifications

The MJE350 meets the primary substitution criteria with enhanced electrical ratings, providing higher voltage capability (300 V), increased current handling (500 mA), and superior power dissipation (20.8 W). Both devices maintain through-hole mounting and compatible package configurations.

Parameter Comparison

Parameter KSA1406CSTU MJE350 Unit
Manufacturer onsemi STMicroelectronics
Product Status Obsolete Active
Transistor Type PNP PNP
Voltage - Collector Emitter Breakdown (Max) 200 300 V
Current - Collector (Ic) (Max) 100 500 mA
Vce Saturation (Max) 800mV @ 3mA, 30mA Not specified
Current - Collector Cutoff (Max) 100 100 nA / µA
DC Current Gain (hFE) (Min) 40 @ 10mA, 10V 30 @ 50mA, 10V
Power - Max 1.2 20.8 W
Frequency - Transition 400 Not specified MHz
Operating Temperature (TJ) 150 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-126-3 SOT-32-3
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The MJE350 is an active production substitute for the obsolete KSA1406CSTU. Selection of the MJE350 is supported by the following factors:

Product Status: The MJE350 maintains active production status with STMicroelectronics, ensuring long-term availability and supply chain continuity compared to the obsolete KSA1406CSTU.

Electrical Compatibility: The MJE350 exceeds all minimum electrical requirements of the KSA1406CSTU. The higher voltage rating (300 V vs. 200 V), increased current capacity (500 mA vs. 100 mA), and enhanced power dissipation (20.8 W vs. 1.2 W) provide design margin for existing applications.

Regulatory Compliance: Both devices maintain identical REACH and ECCN classifications (REACH Unaffected, EAR99), with the MJE350 additionally certified as RoHS3 Compliant, meeting current environmental standards.

Thermal Performance: Both devices operate at identical maximum junction temperatures (150°C), ensuring thermal design compatibility.

Package Consideration: The MJE350 uses SOT-32-3 packaging while the KSA1406CSTU uses TO-126-3. Both are through-hole configurations with compatible TO-225AA footprints, though PCB layout verification is required for specific applications.

Frequently Asked Questions (FAQ)

Q: Can the MJE350 directly replace the KSA1406CSTU in all applications?

A: The MJE350 meets or exceeds all electrical specifications of the KSA1406CSTU. However, package differences (SOT-32-3 vs. TO-126-3) require verification of PCB footprint compatibility. Both devices share the TO-225AA family designation, indicating compatible pin configurations.

Q: What are the key electrical advantages of the MJE350 over the KSA1406CSTU?

A: The MJE350 provides higher collector-emitter breakdown voltage (300 V vs. 200 V), increased maximum collector current (500 mA vs. 100 mA), and significantly greater power dissipation capability (20.8 W vs. 1.2 W). These enhancements allow operation in higher-power applications while maintaining backward compatibility with lower-power designs.

Q: Are there any electrical parameters where the KSA1406CSTU performs better than the MJE350?

A: The KSA1406CSTU specifies a transition frequency of 400 MHz, while the MJE350 does not provide this specification. For applications requiring high-frequency performance verification, the KSA1406CSTU datasheet should be consulted. The KSA1406CSTU also specifies a higher minimum DC current gain (40 vs. 30 at different test conditions).

Q: What is the impact of the different package types on substitution?

A: The KSA1406CSTU uses TO-126-3 packaging while the MJE350 uses SOT-32-3 packaging. Both are through-hole devices with compatible pin assignments within the TO-225AA family. PCB layout modifications may be necessary to accommodate the different physical dimensions and lead spacing of each package.

Q: Are both devices compliant with current environmental regulations?

A: Both devices maintain REACH Unaffected status. The MJE350 additionally carries RoHS3 Compliance certification, meeting current environmental standards. The KSA1406CSTU, being obsolete, may not meet current procurement requirements for new designs.

Q: What is the moisture sensitivity level for both devices?

A: Both the KSA1406CSTU and MJE350 are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.

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