K817P2 Optoisolator Transistor Output 5KV 4-DIP Equivalent & Substitute Parts

Part Overview

The K817P2 is a 5000Vrms optoisolator with transistor output in 4-DIP packaging, manufactured by Vishay Semiconductor Opto Division. This component is classified as obsolete, making substitute parts necessary for new designs and ongoing production requirements. The K817P2 provides galvanic isolation suitable for applications requiring high voltage isolation with single-channel transistor switching capability.

Substiute Parts

K817P2
Vishay Semiconductor Opto DivisionIn Stock: 12742K817P2 Datasheet
K817P2
Current Part
VO617A-2
Vishay Semiconductor Opto DivisionIn Stock: 1720VO617A-2 Datasheet
VO617A-2
MFR Recommended
TCET1102
Vishay Semiconductor Opto DivisionIn Stock: 1420TCET1102 Datasheet
TCET1102
Parametric Equivalent
TCET1202
Vishay Semiconductor Opto DivisionIn Stock: 1435TCET1202 Datasheet
TCET1202
Parametric Equivalent
FOD817A
onsemiIn Stock: 20361FOD817A Datasheet
FOD817A
MFR Recommended

Key Parameters

Parameter K817P2 Specification
Voltage - Isolation 5000Vrms
Number of Channels 1
Output Type Transistor
Current Transfer Ratio (Min) 63% @ 10mA
Current Transfer Ratio (Max) 125% @ 10mA
Voltage - Output (Max) 70V
Current - Output / Channel 50mA
Vce Saturation (Max) 300mV
Operating Temperature -40°C ~ 100°C
Package / Case 4-DIP (0.300", 7.62mm)
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the K817P2 are classified based on electrical and mechanical compatibility within the optoisolator transistor output category. The primary substitution criteria are:

Critical Parameters for Substitution:

  • Voltage isolation rating (5000Vrms minimum)
  • Single channel configuration
  • Transistor output type
  • 4-DIP package form factor (0.300", 7.62mm)
  • Through-hole mounting compatibility
  • Maximum output voltage (70V minimum)
  • Output current capability (50mA minimum)

Substitute Classification:

MFR Recommended Substitutes meet or exceed all critical parameters with active product status and enhanced performance characteristics.

Parametric Equivalents maintain identical electrical specifications to the K817P2 with active product status and improved availability.

Parameter Comparison

Parameter K817P2 VO617A-2 TCET1102 TCET1202 FOD817A
Manufacturer Vishay Vishay Vishay Vishay onsemi
Product Status Obsolete Active Active Active Active
Voltage - Isolation 5000Vrms 5300Vrms 5000Vrms 5000Vrms 5000Vrms
Number of Channels 1 1 1 1 1
Current Transfer Ratio (Min) 63% @ 10mA 63% @ 5mA 63% @ 10mA 63% @ 10mA 80% @ 5mA
Current Transfer Ratio (Max) 125% @ 10mA 125% @ 5mA 125% @ 10mA 125% @ 10mA 160% @ 5mA
Voltage - Output (Max) 70V 80V 70V 70V 70V
Current - Output / Channel 50mA 50mA 50mA 50mA 50mA
Vce Saturation (Max) 300mV 400mV 300mV 300mV 200mV
Operating Temperature -40°C ~ 100°C -55°C ~ 110°C -40°C ~ 100°C -40°C ~ 100°C -55°C ~ 110°C
Package / Case 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

VO617A-2 (Vishay, Active): Enhanced isolation voltage (5300Vrms) and extended operating temperature range (-55°C ~ 110°C). Faster switching performance with reduced turn-on/turn-off times. Higher maximum output voltage (80V) provides additional design margin. ROHS3 compliant with REACH unaffected status.

TCET1102 (Vishay, Active): Parametric equivalent maintaining identical electrical specifications to K817P2. Identical current transfer ratio, output voltage, and saturation characteristics. ROHS3 compliant with REACH unaffected status. Direct functional replacement for existing designs.

TCET1202 (Vishay, Active): Parametric equivalent with identical performance to K817P2. Maintains all critical electrical parameters. ROHS3 compliant with REACH unaffected status. Suitable for applications requiring Vishay sourcing continuity.

FOD817A (onsemi, Active): Alternative manufacturer option with identical isolation voltage and output specifications. Superior current transfer ratio (80-160% @ 5mA) and lower Vce saturation (200mV) provide improved switching efficiency. Extended operating temperature range (-55°C ~ 110°C). ROHS3 compliant with REACH unaffected status. Highest inventory availability (20,300 pcs).

Frequently Asked Questions (FAQ)

Q: Can VO617A-2 directly replace K817P2 in existing PCB designs?

A: Yes. VO617A-2 maintains identical 4-DIP package dimensions and through-hole pin configuration. All electrical parameters meet or exceed K817P2 specifications. Pin-for-pin compatibility is confirmed.

Q: What is the difference between TCET1102 and TCET1202?

A: Both parts are parametric equivalents with identical electrical specifications to K817P2. TCET1102 and TCET1202 differ only in manufacturer part numbering and base product designation. Electrical performance and package form factor are equivalent.

Q: Is FOD817A suitable for applications requiring -40°C minimum operating temperature?

A: FOD817A operates from -55°C, exceeding the -40°C minimum requirement of K817P2. This part is suitable for applications with extended low-temperature requirements.

Q: What is the primary advantage of VO617A-2 over parametric equivalents?

A: VO617A-2 provides enhanced isolation voltage (5300Vrms vs 5000Vrms), faster switching times, and higher maximum output voltage (80V vs 70V). These characteristics provide additional design margin for high-voltage isolation applications.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (VO617A-2, TCET1102, TCET1202, FOD817A) are ROHS3 compliant. All parts maintain environmental compliance equivalent to K817P2.

Q: Which substitute part offers the best current transfer ratio performance?

A: FOD817A provides the highest current transfer ratio (80-160% @ 5mA), compared to 63-125% @ 10mA for K817P2 and parametric equivalents. This results in improved switching efficiency and reduced input current requirements.

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