JS28F00AP30BFA Equivalent & Substitute Parts

Part Overview

The JS28F00AP30BFA is a 1Gbit parallel NOR Flash memory IC manufactured by Micron Technology Inc., housed in a 56-TSOP package. This component operates at 1.7V to 2.0V supply voltage with a 110 ns access time and 40 MHz clock frequency, designed for non-volatile memory applications requiring parallel interface connectivity.

The JS28F00AP30BFA is classified as obsolete. Locating equivalent or substitute components is necessary to support legacy system maintenance, design updates, or when original inventory becomes unavailable. Substitute parts must maintain functional compatibility across memory capacity, interface type, and physical packaging while accommodating operational parameter variations.

Substiute Parts

JS28F00AP30BFA
Micron Technology Inc.In Stock: 1195JS28F00AP30BFA Datasheet
JS28F00AP30BFA
Current Part
MT28EW01GABA1LJS-0SIT
Micron Technology Inc.In Stock: 2278MT28EW01GABA1LJS-0SIT Datasheet
MT28EW01GABA1LJS-0SIT
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Key Parameters

Parameter Value
Memory Size 1Gbit
Memory Format FLASH - NOR
Memory Organization 64M x 16
Memory Interface Parallel
Package / Case 56-TFSOP (0.724", 18.40mm Width)
Mounting Type Surface Mount
Access Time 110 ns
Clock Frequency 40 MHz
Voltage - Supply 1.7V ~ 2.0V
Operating Temperature -40°C ~ 85°C (TA)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the JS28F00AP30BFA is determined by the following critical parameters:

Primary Compatibility Criteria:

  • Memory capacity: 1Gbit
  • Memory technology: FLASH - NOR
  • Memory interface: Parallel
  • Physical package: 56-TFSOP form factor
  • Mounting type: Surface Mount

Secondary Compatibility Criteria:

  • Memory organization supporting 64M x 16 configuration
  • Operating temperature range: -40°C ~ 85°C (TA)
  • RoHS3 compliance
  • Moisture Sensitivity Level (MSL): 3

The MT28EW01GABA1LJS-0SIT meets all primary compatibility criteria. While this substitute exhibits different voltage supply specifications (2.7V ~ 3.6V versus 1.7V ~ 2.0V) and improved access time performance (95 ns versus 110 ns), it maintains functional equivalence for 1Gbit parallel NOR Flash applications within the specified package and temperature operating range.

Parameter Comparison

Parameter JS28F00AP30BFA MT28EW01GABA1LJS-0SIT
Memory Size 1Gbit 1Gbit
Memory Format FLASH - NOR FLASH - NOR
Memory Organization 64M x 16 128M x 8, 64M x 16
Memory Interface Parallel Parallel
Package / Case 56-TFSOP (0.724", 18.40mm Width) 56-TFSOP (0.724", 18.40mm Width)
Mounting Type Surface Mount Surface Mount
Access Time 110 ns 95 ns
Clock Frequency 40 MHz Not specified
Voltage - Supply 1.7V ~ 2.0V 2.7V ~ 3.6V
Write Cycle Time - Word, Page 110 ns 60 ns
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)

Engineering Selection Recommendations

The MT28EW01GABA1LJS-0SIT is an active product status component, whereas the JS28F00AP30BFA is obsolete. Both components maintain ROHS3 compliance and identical moisture sensitivity specifications, supporting equivalent handling and storage requirements.

The primary design consideration for substitution involves voltage supply specifications. The JS28F00AP30BFA operates at 1.7V to 2.0V, while the MT28EW01GABA1LJS-0SIT requires 2.7V to 3.6V. Circuit design must accommodate this voltage differential through appropriate power supply configuration or voltage regulation.

Both components share identical physical packaging (56-TFSOP), operating temperature range (-40°C to 85°C), and parallel interface architecture, enabling direct footprint compatibility on printed circuit boards.

Frequently Asked Questions (FAQ)

Q: Can the MT28EW01GABA1LJS-0SIT directly replace the JS28F00AP30BFA without circuit modification?

A: Physical footprint and pinout compatibility exist due to identical 56-TFSOP packaging. However, voltage supply specifications differ (1.7V–2.0V versus 2.7V–3.6V). Circuit design must accommodate this voltage requirement through appropriate power supply configuration.

Q: Are there memory organization differences between these components?

A: The JS28F00AP30BFA supports 64M x 16 organization. The MT28EW01GABA1LJS-0SIT supports both 128M x 8 and 64M x 16 configurations, providing organizational flexibility while maintaining 1Gbit total capacity.

Q: What is the significance of the access time difference (110 ns versus 95 ns)?

A: The MT28EW01GABA1LJS-0SIT provides faster access time (95 ns) compared to the JS28F00AP30BFA (110 ns). This represents improved performance and does not create compatibility issues in applications designed for the original component's timing specifications.

Q: Do both components require identical handling procedures?

A: Yes. Both components maintain Moisture Sensitivity Level 3 (168 Hours) classification, requiring identical moisture control, storage, and handling procedures during manufacturing and assembly operations.

Q: Is the MT28EW01GABA1LJS-0SIT suitable for legacy system maintenance applications?

A: The MT28EW01GABA1LJS-0SIT is active product status, ensuring continued availability for legacy system support. Voltage supply requirements must be evaluated within the context of existing circuit design specifications.

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