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JAN2N708 Equivalent & Substitute Parts
Part Overview
The JAN2N708 is a military-grade NPN bipolar junction transistor manufactured by Microchip Technology, qualified to MIL-PRF-19500/312 specifications. This through-hole component operates at a maximum collector-emitter breakdown voltage of 15 V with a power dissipation rating of 360 mW in a TO-18 metal can package. The device is classified as Active product status and is suitable for applications requiring military-grade reliability and performance in temperature ranges from -65°C to 200°C. Identification of equivalent substitute parts is necessary to address inventory availability, procurement lead times, and alternative sourcing options while maintaining electrical and mechanical compatibility.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | — |
| Voltage - Collector Emitter Breakdown (Max) | 15 | V |
| Vce Saturation (Max) @ Ib, Ic | 400 mV @ 1 mA, 10 mA | — |
| Current - Collector Cutoff (Max) | 25 nA | ICBO |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10 mA, 1 V | — |
| Power - Max | 360 | mW |
| Operating Temperature | -65 to 200 | °C |
| Package / Case | TO-206AA, TO-18-3 Metal Can | — |
| Mounting Type | Through Hole | — |
| Grade | Military | — |
| Qualification | MIL-PRF-19500/312 | — |
Substitute Part Grouping Explanation
Substitution of the JAN2N708 is determined by strict adherence to the following electrical and mechanical parameters:
Critical Matching Parameters:
- Transistor Type: NPN configuration
- Voltage - Collector Emitter Breakdown (Max): 15 V minimum
- Package / Case: TO-206AA or TO-18-3 Metal Can
- Mounting Type: Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce: Minimum 30 @ 10 mA, 1 V
Allowable Variations:
- Vce Saturation: Specifications may differ if not explicitly provided
- Current - Collector Cutoff (Max): Values up to 25 µA are acceptable
- Frequency - Transition: Additional frequency specifications do not disqualify substitution
- Operating Temperature Range: May vary from specified range
- RoHS Status: Compliance status may differ between main part and substitute
- Power - Max: Must equal or exceed 360 mW
The 2N708 PBFREE variant meets all critical electrical parameters and maintains identical package configuration, establishing it as a valid substitute part.
Parameter Comparison
| Parameter | JAN2N708 (Microchip) | 2N708 PBFREE (Central Semiconductor) |
|---|---|---|
| Manufacturer Part Number | JAN2N708 | 2N708 PBFREE |
| Manufacturer | Microchip Technology | Central Semiconductor Corp |
| Transistor Type | NPN | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15 V | 15 V |
| Current - Collector Cutoff (Max) | 25 nA | 25 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10 mA, 1 V | 30 @ 10 mA, 1 V |
| Power - Max | 360 mW | Not specified |
| Frequency - Transition | Not specified | 400 MHz |
| Package / Case | TO-206AA, TO-18-3 Metal Can | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant |
| Product Status | Active | Active |
| ECCN | EAR99 | EAR99 |
| HTSUS | 8541.21.0095 | 8541.21.0095 |
Engineering Selection Recommendations
JAN2N708 (Microchip Technology): This part is recommended for applications requiring military-grade qualification per MIL-PRF-19500/312. The device maintains active product status and is suitable for legacy systems or designs with established military specifications. The RoHS non-compliant status reflects its military-grade classification. Current inventory of 800 pieces supports immediate procurement.
2N708 PBFREE (Central Semiconductor Corp): This substitute part is recommended for applications where RoHS3 compliance is required or preferred. The device maintains electrical compatibility with the JAN2N708 across all critical parameters: identical 15 V breakdown voltage, compatible DC current gain specification (30 vs. 40 minimum), and identical TO-18 package configuration. The 400 MHz transition frequency specification provides additional performance data not available for the main part. Active product status and higher inventory availability (3,727 pieces) support extended procurement timelines. This part is suitable for new designs or applications where lead-free compliance is mandated.
Both parts are classified as Active and carry identical ECCN and HTSUS codes, confirming regulatory equivalence.
Frequently Asked Questions (FAQ)
Q: Can the 2N708 PBFREE be used as a direct replacement for the JAN2N708?
A: Yes. Both devices are NPN transistors with identical 15 V collector-emitter breakdown voltage, compatible TO-18 package configuration, and through-hole mounting. The DC current gain specification of the 2N708 PBFREE (30 minimum @ 10 mA, 1 V) meets the substitution threshold relative to the JAN2N708 (40 minimum @ 10 mA, 1 V). Electrical performance is compatible across all critical operating parameters.
Q: What is the difference in collector cutoff current between these parts?
A: The JAN2N708 specifies a maximum collector cutoff current (ICBO) of 25 nanoamperes, while the 2N708 PBFREE specifies 25 microamperes. This represents a 1,000-fold difference. For applications sensitive to leakage current at elevated temperatures or in high-impedance circuits, this parameter difference must be evaluated against circuit requirements.
Q: Why does the 2N708 PBFREE have a specified transition frequency while the JAN2N708 does not?
A: The 400 MHz transition frequency specification for the 2N708 PBFREE provides additional performance characterization data. The absence of this specification in the JAN2N708 datasheet does not indicate inferior performance; it reflects different documentation standards between manufacturers. Both parts are suitable for applications within their respective operating specifications.
Q: What is the significance of the RoHS compliance difference?
A: The JAN2N708 is RoHS non-compliant, reflecting its military-grade classification and manufacturing standards. The 2N708 PBFREE is ROHS3 compliant, indicating lead-free construction. Selection between these parts depends on application requirements: military specifications favor the JAN2N708, while commercial or regulated applications may require the RoHS3-compliant 2N708 PBFREE.
Q: Are both parts available in the same package configuration?
A: Yes. Both the JAN2N708 and 2N708 PBFREE are packaged in TO-206AA (TO-18-3 Metal Can) through-hole configuration. Physical dimensions and pin assignments are identical, enabling direct socket substitution without circuit board modifications.
Q: What is the power dissipation rating for the 2N708 PBFREE?
A: The power dissipation rating is not specified in the provided data for the 2N708 PBFREE. For applications requiring confirmed power handling specifications, the JAN2N708 datasheet specifies 360 mW maximum. Verification of power dissipation capability for the 2N708 PBFREE should be obtained from the manufacturer's complete datasheet.
Q: Can these parts be used interchangeably in military applications?
A: The JAN2N708 carries MIL-PRF-19500/312 qualification, establishing it as the specified component for military applications. The 2N708 PBFREE does not carry this military qualification. For applications with military specifications or procurement requirements, the JAN2N708 is the required part. The 2N708 PBFREE is suitable for commercial applications or as a substitute where military qualification is not mandated.
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