J202_D26Z JFET N-Channel Equivalent & Substitute Parts

Part Overview

The J202_D26Z is an N-Channel JFET transistor manufactured by onsemi, rated for 40 V breakdown voltage with a maximum power dissipation of 625 mW in a through-hole TO-92-3 package. This device is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity. The electrical characteristics remain consistent across available alternatives, though packaging and power ratings may differ based on application requirements.

Substiute Parts

J202_D26Z

onsemiIn Stock: 1069J202_D26Z Datasheet

Current PartRFQ

MMBFJ202

onsemiIn Stock: 80322MMBFJ202 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the J202_D26Z is determined by matching the following critical electrical parameters:

• FET Type: N-Channel configuration
• Voltage - Breakdown (V(BR)GSS): 40 V minimum rating
• Current - Drain (Idss) @ Vds (Vgs=0): 900 µA @ 20 V
• Voltage - Cutoff (VGS off) @ Id: 800 mV @ 10 nA
• Operating Temperature Range: -55°C to 150°C (TJ)

The MMBFJ202 meets all electrical specifications of the J202_D26Z. The primary difference is packaging: MMBFJ202 uses surface-mount SOT-23-3 instead of through-hole TO-92-3, and has a reduced maximum power rating of 350 mW versus 625 mW. These differences determine suitability based on circuit board layout and thermal requirements.

Parameter Comparison

Engineering Selection Recommendations

The MMBFJ202 is electrically equivalent to the J202_D26Z for all specified transistor parameters. Selection between these parts depends on application constraints:

Use J202_D26Z when:

• Through-hole mounting is required for the circuit board design
• Power dissipation up to 625 mW is necessary
• Existing inventory is available (970 Pcs in stock)

Use MMBFJ202 when:

• Surface-mount assembly is required
• Power dissipation up to 350 mW is sufficient for the application
• Active product status and higher inventory (80,300 Pcs) support long-term availability
• RoHS3 compliance is required

Both parts share identical electrical characteristics and operating temperature range, ensuring functional compatibility in circuits designed for the J202_D26Z specifications. The MMBFJ202 is classified as Active and RoHS3 Compliant, providing superior long-term supply chain support compared to the obsolete J202_D26Z.

Frequently Asked Questions (FAQ)

Q: Can MMBFJ202 directly replace J202_D26Z in all applications?

A: Electrical substitution is valid for all specified parameters. However, packaging differences require circuit board redesign: J202_D26Z uses through-hole TO-92-3, while MMBFJ202 uses surface-mount SOT-23-3. Additionally, MMBFJ202 has a lower maximum power rating (350 mW vs. 625 mW), so applications requiring higher power dissipation must be evaluated separately.

Q: What are the key electrical parameters that must match for substitution?

A: The critical parameters are: FET Type (N-Channel), Voltage - Breakdown (40 V), Current - Drain (900 µA @ 20 V), Voltage - Cutoff (800 mV @ 10 nA), and Operating Temperature Range (-55°C to 150°C). Both parts meet these specifications.

Q: Why is the J202_D26Z obsolete while MMBFJ202 is active?

A: The J202_D26Z is a through-hole component from an earlier product generation. The MMBFJ202 represents the current surface-mount equivalent in onsemi's product line, reflecting industry-wide transition from through-hole to surface-mount technology.

Q: Are there compliance differences between these parts?

A: The MMBFJ202 is RoHS3 Compliant, while the J202_D26Z compliance status is not specified in the provided data. Both parts are REACH Unaffected and classified under ECCN EAR99.

Q: What is the impact of the 275 mW power rating difference?

A: The MMBFJ202's 350 mW maximum rating is lower than the J202_D26Z's 625 mW. For applications dissipating more than 350 mW, the J202_D26Z is required. For applications below 350 mW, both parts are suitable.