J113_D27Z JFET N-Channel Equivalent & Substitute Parts

Part Overview

The J113_D27Z is an N-Channel JFET transistor manufactured by onsemi, rated for 35 V breakdown voltage with 625 mW power dissipation in a through-hole TO-92-3 package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and component procurement. Substitute parts must maintain electrical equivalence across critical parameters including breakdown voltage, drain current characteristics, and operating temperature range while accommodating different packaging formats.

Substiute Parts

J113_D27Z
onsemiIn Stock: 928J113_D27Z Datasheet
J113_D27Z
Current Part
MMBFJ113
onsemiIn Stock: 55898MMBFJ113 Datasheet
MMBFJ113
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Key Parameters

Parameter Value Unit
Voltage - Breakdown (V(BR)GSS) 35 V
Current - Drain (Idss) @ Vds (Vgs=0) 2 @ 15 mA @ V
Voltage - Cutoff (VGS off) @ Id 500 @ 1 mV @ µA
Resistance - RDS(On) 100 Ohms
Power - Max 625 mW
Operating Temperature Range -55 to 150 °C (TJ)
FET Type N-Channel
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitution eligibility for the J113_D27Z is determined by electrical parameter equivalence across the following criteria:

  • Voltage - Breakdown (V(BR)GSS): Must equal 35 V
  • Current - Drain (Idss) @ Vds (Vgs=0): Must equal 2 mA @ 15 V
  • Voltage - Cutoff (VGS off) @ Id: Must equal 500 mV @ 1 µA
  • Resistance - RDS(On): Must equal 100 Ohms
  • Operating Temperature Range: Must span -55°C to 150°C (TJ)
  • FET Type: Must be N-Channel

The MMBFJ113 meets all electrical parameter requirements for functional substitution. The primary distinction is packaging format: MMBFJ113 uses surface-mount SOT-23-3 technology versus the through-hole TO-92-3 format of the J113_D27Z. This substitution is valid where circuit board layout and assembly process accommodate surface-mount components.

Parameter Comparison

Parameter J113_D27Z MMBFJ113 Match
Manufacturer onsemi onsemi Yes
FET Type N-Channel N-Channel Yes
Voltage - Breakdown (V(BR)GSS) 35 V 35 V Yes
Current - Drain (Idss) @ Vds (Vgs=0) 2 mA @ 15 V 2 mA @ 15 V Yes
Voltage - Cutoff (VGS off) @ Id 500 mV @ 1 µA 500 mV @ 1 µA Yes
Resistance - RDS(On) 100 Ohms 100 Ohms Yes
Operating Temperature Range -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) Yes
Power - Max 625 mW 350 mW No
Mounting Type Through Hole Surface Mount No
Package / Case TO-92-3 SOT-23-3 No
Product Status Obsolete Active

Engineering Selection Recommendations

The MMBFJ113 provides electrical equivalence to the J113_D27Z across all critical JFET parameters. Selection between these devices depends on application constraints:

Electrical Compatibility: Both devices are electrically equivalent. The J113_D27Z and MMBFJ113 share identical breakdown voltage, drain current characteristics, cutoff voltage, and on-resistance specifications.

Power Dissipation Consideration: The J113_D27Z is rated for 625 mW maximum power dissipation, while the MMBFJ113 is rated for 350 mW. Applications requiring sustained power dissipation above 350 mW must use the J113_D27Z or implement thermal management for the MMBFJ113.

Product Status: The MMBFJ113 carries Active product status with ROHS3 compliance, whereas the J113_D27Z is Obsolete. For new designs and long-term availability, the MMBFJ113 is the preferred selection.

Packaging and Assembly: The J113_D27Z uses through-hole TO-92-3 packaging suitable for manual assembly and breadboarding. The MMBFJ113 uses surface-mount SOT-23-3 packaging, requiring surface-mount assembly processes. Circuit board layout and manufacturing capability determine packaging selection.

Frequently Asked Questions (FAQ)

Q: Can MMBFJ113 directly replace J113_D27Z in existing through-hole designs?

A: Electrical substitution is valid. Physical replacement requires either adapter boards or circuit redesign to accommodate SOT-23-3 surface-mount footprint instead of TO-92-3 through-hole leads.

Q: What is the impact of the 275 mW power dissipation difference?

A: Applications operating below 350 mW maximum power dissipation experience no functional impact. Designs requiring sustained operation above 350 mW must retain the J113_D27Z or implement additional thermal management for the MMBFJ113.

Q: Are there compliance differences between J113_D27Z and MMBFJ113?

A: Both devices share identical REACH and ECCN classifications (REACH Unaffected, EAR99). The MMBFJ113 carries ROHS3 compliance certification. Both devices have MSL rating of 1 (Unlimited).

Q: What are the pin configuration differences?

A: Both devices use three-pin configurations: J113_D27Z in TO-92-3 format and MMBFJ113 in SOT-23-3 format. Pin assignments for gate, drain, and source remain functionally equivalent; physical lead positions differ according to package geometry.

Q: Is the MMBFJ113 suitable for new product designs?

A: Yes. The MMBFJ113 is classified as Active product status with current manufacturing support, making it the appropriate choice for new designs requiring long-term component availability.

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