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J113_D27Z JFET N-Channel Equivalent & Substitute Parts
Part Overview
The J113_D27Z is an N-Channel JFET transistor manufactured by onsemi, rated for 35 V breakdown voltage with 625 mW power dissipation in a through-hole TO-92-3 package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and component procurement. Substitute parts must maintain electrical equivalence across critical parameters including breakdown voltage, drain current characteristics, and operating temperature range while accommodating different packaging formats.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - Breakdown (V(BR)GSS) | 35 | V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2 @ 15 | mA @ V |
| Voltage - Cutoff (VGS off) @ Id | 500 @ 1 | mV @ µA |
| Resistance - RDS(On) | 100 | Ohms |
| Power - Max | 625 | mW |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| FET Type | N-Channel | — |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 | — |
Substitute Part Grouping Explanation
Substitution eligibility for the J113_D27Z is determined by electrical parameter equivalence across the following criteria:
- Voltage - Breakdown (V(BR)GSS): Must equal 35 V
- Current - Drain (Idss) @ Vds (Vgs=0): Must equal 2 mA @ 15 V
- Voltage - Cutoff (VGS off) @ Id: Must equal 500 mV @ 1 µA
- Resistance - RDS(On): Must equal 100 Ohms
- Operating Temperature Range: Must span -55°C to 150°C (TJ)
- FET Type: Must be N-Channel
The MMBFJ113 meets all electrical parameter requirements for functional substitution. The primary distinction is packaging format: MMBFJ113 uses surface-mount SOT-23-3 technology versus the through-hole TO-92-3 format of the J113_D27Z. This substitution is valid where circuit board layout and assembly process accommodate surface-mount components.
Parameter Comparison
| Parameter | J113_D27Z | MMBFJ113 | Match |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Yes |
| FET Type | N-Channel | N-Channel | Yes |
| Voltage - Breakdown (V(BR)GSS) | 35 V | 35 V | Yes |
| Current - Drain (Idss) @ Vds (Vgs=0) | 2 mA @ 15 V | 2 mA @ 15 V | Yes |
| Voltage - Cutoff (VGS off) @ Id | 500 mV @ 1 µA | 500 mV @ 1 µA | Yes |
| Resistance - RDS(On) | 100 Ohms | 100 Ohms | Yes |
| Operating Temperature Range | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | Yes |
| Power - Max | 625 mW | 350 mW | No |
| Mounting Type | Through Hole | Surface Mount | No |
| Package / Case | TO-92-3 | SOT-23-3 | No |
| Product Status | Obsolete | Active | — |
Engineering Selection Recommendations
The MMBFJ113 provides electrical equivalence to the J113_D27Z across all critical JFET parameters. Selection between these devices depends on application constraints:
Electrical Compatibility: Both devices are electrically equivalent. The J113_D27Z and MMBFJ113 share identical breakdown voltage, drain current characteristics, cutoff voltage, and on-resistance specifications.
Power Dissipation Consideration: The J113_D27Z is rated for 625 mW maximum power dissipation, while the MMBFJ113 is rated for 350 mW. Applications requiring sustained power dissipation above 350 mW must use the J113_D27Z or implement thermal management for the MMBFJ113.
Product Status: The MMBFJ113 carries Active product status with ROHS3 compliance, whereas the J113_D27Z is Obsolete. For new designs and long-term availability, the MMBFJ113 is the preferred selection.
Packaging and Assembly: The J113_D27Z uses through-hole TO-92-3 packaging suitable for manual assembly and breadboarding. The MMBFJ113 uses surface-mount SOT-23-3 packaging, requiring surface-mount assembly processes. Circuit board layout and manufacturing capability determine packaging selection.
Frequently Asked Questions (FAQ)
Q: Can MMBFJ113 directly replace J113_D27Z in existing through-hole designs?
A: Electrical substitution is valid. Physical replacement requires either adapter boards or circuit redesign to accommodate SOT-23-3 surface-mount footprint instead of TO-92-3 through-hole leads.
Q: What is the impact of the 275 mW power dissipation difference?
A: Applications operating below 350 mW maximum power dissipation experience no functional impact. Designs requiring sustained operation above 350 mW must retain the J113_D27Z or implement additional thermal management for the MMBFJ113.
Q: Are there compliance differences between J113_D27Z and MMBFJ113?
A: Both devices share identical REACH and ECCN classifications (REACH Unaffected, EAR99). The MMBFJ113 carries ROHS3 compliance certification. Both devices have MSL rating of 1 (Unlimited).
Q: What are the pin configuration differences?
A: Both devices use three-pin configurations: J113_D27Z in TO-92-3 format and MMBFJ113 in SOT-23-3 format. Pin assignments for gate, drain, and source remain functionally equivalent; physical lead positions differ according to package geometry.
Q: Is the MMBFJ113 suitable for new product designs?
A: Yes. The MMBFJ113 is classified as Active product status with current manufacturing support, making it the appropriate choice for new designs requiring long-term component availability.
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