J113_D26Z JFET N-Channel Equivalent & Substitute Parts

Part Overview

The J113_D26Z is an N-Channel JFET transistor manufactured by onsemi, rated for 35 V breakdown voltage with 625 mW power dissipation in a through-hole TO-92-3 package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. Substitute parts must maintain electrical performance across gate-source voltage, drain current, and on-state resistance specifications while accommodating different mounting technologies.

Substiute Parts

J113_D26Z
onsemiIn Stock: 1039J113_D26Z Datasheet
J113_D26Z
Current Part
MMBFJ113
onsemiIn Stock: 55898MMBFJ113 Datasheet
MMBFJ113
Similar

Key Parameters

Parameter Value Unit
Voltage - Breakdown (V(BR)GSS) 35 V
Current - Drain (Idss) @ Vds (Vgs=0) 2 @ 15 mA @ V
Voltage - Cutoff (VGS off) @ Id 500 @ 1 mV @ µA
Resistance - RDS(On) 100 Ohms
Power - Max 625 mW
Operating Temperature Range -55 to 150 °C (TJ)
FET Type N-Channel
Mounting Type Through Hole
Package / Case TO-92-3

Substitute Part Grouping Explanation

Substitution of the J113_D26Z is determined by matching the following electrical parameters:

  • Voltage - Breakdown (V(BR)GSS): 35 V minimum
  • Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
  • Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
  • Resistance - RDS(On): 100 Ohms
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • FET Type: N-Channel

The MMBFJ113 meets all electrical specifications of the J113_D26Z. The primary difference is the mounting technology: MMBFJ113 uses surface-mount SOT-23-3 packaging instead of through-hole TO-92-3. This substitution is valid when circuit board layout and assembly processes support surface-mount components. Power dissipation differs (350 mW vs. 625 mW), which may affect thermal performance in high-power applications.

Parameter Comparison

Parameter J113_D26Z MMBFJ113 Match Status
Manufacturer onsemi onsemi Identical
FET Type N-Channel N-Channel Identical
Voltage - Breakdown (V(BR)GSS) 35 V 35 V Identical
Current - Drain (Idss) @ Vds (Vgs=0) 2 mA @ 15 V 2 mA @ 15 V Identical
Voltage - Cutoff (VGS off) @ Id 500 mV @ 1 µA 500 mV @ 1 µA Identical
Resistance - RDS(On) 100 Ohms 100 Ohms Identical
Power - Max 625 mW 350 mW Substitute lower
Operating Temperature Range -55°C to 150°C (TJ) -55°C to 150°C (TJ) Identical
Mounting Type Through Hole Surface Mount Different
Package / Case TO-92-3 SOT-23-3 Different
Product Status Obsolete Active Substitute active

Engineering Selection Recommendations

The MMBFJ113 is the direct electrical equivalent of the J113_D26Z and is recommended as the primary substitute. Selection between these parts depends on circuit board assembly technology:

  • Use MMBFJ113 for new designs or redesigns supporting surface-mount assembly. This part is in active production status with higher inventory availability (55,800 pcs vs. 974 pcs).
  • Retain J113_D26Z only if through-hole mounting is a mandatory design constraint and existing inventory is available.

Both parts share identical electrical specifications for gate-source breakdown voltage, drain current, gate cutoff voltage, and on-state resistance. Both operate across the full -55°C to 150°C temperature range. The MMBFJ113 has lower maximum power dissipation (350 mW vs. 625 mW), which may require thermal review in applications approaching the original 625 mW specification.

Both parts carry REACH Unaffected status and EAR99 ECCN classification. The MMBFJ113 is RoHS3 compliant.

Frequently Asked Questions (FAQ)

Q: Can MMBFJ113 directly replace J113_D26Z in existing through-hole circuit boards?

A: No. MMBFJ113 uses SOT-23-3 surface-mount packaging, while J113_D26Z uses TO-92-3 through-hole packaging. Direct board-level substitution requires circuit board redesign and assembly process changes. Electrical performance is identical, but physical mounting differs.

Q: Are the electrical characteristics identical between J113_D26Z and MMBFJ113?

A: Yes. Both devices share identical specifications for voltage breakdown (35 V), drain current (2 mA @ 15 V), gate cutoff voltage (500 mV @ 1 µA), and on-state resistance (100 Ohms). Operating temperature range is also identical (-55°C to 150°C).

Q: What is the impact of the lower power rating on MMBFJ113 (350 mW vs. 625 mW)?

A: The MMBFJ113 has a lower maximum power dissipation specification. Applications operating near the original 625 mW specification must verify that actual power dissipation remains within the 350 mW limit of the substitute part. Thermal analysis is required for high-power applications.

Q: Why is J113_D26Z marked as obsolete?

A: J113_D26Z is classified as obsolete by the manufacturer. The MMBFJ113 is the active production equivalent and is recommended for new designs and long-term supply continuity.

Q: Are there compliance or certification differences between these parts?

A: Both parts are REACH Unaffected and carry EAR99 ECCN classification. MMBFJ113 is additionally RoHS3 compliant. Both have MSL rating of 1 (Unlimited).

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