J112 JFET N-Channel Transistor Equivalent & Substitute Parts

Part Overview

The J112 is an N-Channel JFET (Junction Field-Effect Transistor) rated for 35 V breakdown voltage, designed for through-hole mounting in TO-92-3 package configuration. This device is classified as Active product status and serves applications requiring N-channel field-effect switching and amplification. Substitute parts are identified to provide equivalent functional performance when the original manufacturer part becomes unavailable or when design requirements necessitate alternative sourcing options.

Substiute Parts

J112

Central Semiconductor CorpIn Stock: 18576J112 Datasheet

Current PartRFQ

J112

onsemiIn Stock: 18580J112 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the J112 is determined by the following critical parameters:

• FET Type: Must be N-Channel
• Voltage - Breakdown (V(BR)GSS): Must be 35 V or greater
• Current - Drain (Idss) @ Vds (Vgs=0): Must be 5 mA @ 15 V
• Resistance - RDS(On): Must be 50 Ohms
• Package / Case: Must be TO-92-3 (TO-226AA)
• Mounting Type: Must be Through Hole

The J112 manufactured by onsemi meets all substitution criteria. Both devices share identical electrical specifications for breakdown voltage, drain current, on-resistance, and package configuration, enabling direct functional equivalence in circuit applications.

Parameter Comparison

Engineering Selection Recommendations

The onsemi J112 serves as a direct substitute for the Central Semiconductor Corp J112 based on matching electrical parameters and identical package configuration. The onsemi variant provides higher maximum power dissipation (625 mW versus 350 mW), which offers improved thermal margin in applications approaching power limits. The onsemi device achieves ROHS3 compliance, whereas the Central Semiconductor Corp version is RoHS non-compliant. Selection between these variants depends on regulatory requirements and thermal design constraints of the target application.

Frequently Asked Questions (FAQ)

Q: Can the onsemi J112 replace the Central Semiconductor Corp J112 in existing designs?

A: Yes. Both devices share identical breakdown voltage (35 V), drain current (5 mA @ 15 V), on-resistance (50 Ohms), and TO-92-3 package configuration. The onsemi variant provides higher power rating (625 mW) and does not introduce functional incompatibility.

Q: What is the significance of the different VGS off specifications?

A: The Central Semiconductor Corp J112 specifies 5 V @ 1 µA cutoff voltage, while the onsemi J112 specifies 1 V @ 1 µA. This parameter variation falls within acceptable substitution tolerance for N-Channel JFET applications where gate-source cutoff characteristics are secondary to primary electrical ratings.

Q: Are there temperature range differences between the two devices?

A: The Central Semiconductor Corp J112 operates from -65°C to 150°C, while the onsemi J112 operates from -55°C to 150°C. Applications requiring operation below -55°C must use the Central Semiconductor Corp variant.

Q: Does RoHS compliance affect substitution eligibility?

A: RoHS compliance is a regulatory and supply-chain consideration, not a functional electrical parameter. The onsemi J112 (ROHS3 compliant) is electrically equivalent to the Central Semiconductor Corp J112 (RoHS non-compliant). Selection depends on end-product regulatory requirements.

Q: Is the TO-92-3 package identical between manufacturers?

A: Yes. Both devices use the TO-92-3 (TO-226AA) through-hole package, enabling direct physical and electrical substitution without PCB redesign.