J110RLRAG JFET N-Channel Transistor Equivalent & Substitute Parts

Part Overview

The J110RLRAG is an N-Channel JFET transistor manufactured by onsemi, designed for through-hole applications in the TO-92 package. This device operates at a maximum breakdown voltage of 25 V with a power dissipation rating of 310 mW. The part is currently classified as obsolete, making identification of suitable substitute components essential for ongoing design support and production continuity. Equivalent parts must maintain functional compatibility across critical electrical parameters while accommodating modern supply chain availability.

Substiute Parts

J110RLRAG

onsemiIn Stock: 1214J110RLRAG Datasheet

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J109-D26Z

onsemiIn Stock: 40106J109-D26Z Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the J110RLRAG is determined by strict equivalence across the following critical parameters:

• FET Type: N-Channel configuration must be maintained
• Voltage - Breakdown (V(BR)GSS): Minimum 25 V required
• Package / Case: TO-92-3 through-hole form factor for mechanical and electrical compatibility
• Mounting Type: Through Hole configuration

The J109-D26Z qualifies as a direct substitute based on matching FET type, breakdown voltage specification, and through-hole TO-92-3 package configuration. This substitute maintains the same electrical classification while offering improved performance characteristics and active product status.

Parameter Comparison

Engineering Selection Recommendations

The J109-D26Z is the qualified substitute for the J110RLRAG based on the following engineering criteria:

• Both devices share identical FET type (N-Channel) and breakdown voltage rating (25 V), ensuring functional equivalence in circuit operation
• Both devices utilize the TO-92-3 through-hole package, providing mechanical and pin compatibility
• The J109-D26Z maintains active product status with ROHS3 compliance, supporting long-term supply chain availability and regulatory requirements
• The J110RLRAG is classified as obsolete, necessitating transition to the J109-D26Z for production continuity
• The J109-D26Z offers enhanced electrical performance characteristics, including higher power dissipation (625 mW vs. 310 mW), lower on-resistance (12 Ohms vs. 18 Ohms), and extended operating temperature range (−55°C to 150°C vs. 135°C maximum)

Frequently Asked Questions (FAQ)

Q: Can the J109-D26Z be used as a direct replacement for the J110RLRAG in existing designs?

A: Yes. Both devices are N-Channel JFETs with 25 V breakdown voltage in TO-92-3 packages. Pin configuration and electrical classification are identical, enabling direct substitution without circuit modification.

Q: What are the key differences between these two parts?

A: The J109-D26Z provides superior performance with higher drain current (40 mA vs. 10 mA), lower on-resistance (12 Ohms vs. 18 Ohms), higher power rating (625 mW vs. 310 mW), and wider operating temperature range (−55°C to 150°C vs. 135°C). The J109-D26Z is also an active product with modern compliance certifications.

Q: Why is the J110RLRAG classified as obsolete?

A: The J110RLRAG has been discontinued by onsemi. The J109-D26Z represents the current active equivalent in the onsemi JFET product line.

Q: Are there any package or pinout differences?

A: Both devices use the TO-92-3 through-hole package with identical pinout. No mechanical or electrical interface changes are required.

Q: What compliance certifications apply to the substitute part?

A: The J109-D26Z is ROHS3 compliant and REACH unaffected, meeting current regulatory requirements for electronic component manufacturing and distribution.