J110 JFET N-Channel Transistor Equivalent & Substitute Parts

Part Overview

The J110 is an N-Channel JFET transistor manufactured by onsemi, rated for 25 V breakdown voltage with 310 mW maximum power dissipation in a Through Hole TO-92 package. The device is classified as obsolete, making equivalent and substitute parts necessary for new designs and production continuity. Substitute parts must maintain electrical compatibility across key parameters including breakdown voltage, drain current characteristics, and on-resistance while accommodating different package formats and compliance requirements.

Substiute Parts

J110
onsemiIn Stock: 1559J110 Datasheet
J110
Current Part
J109-D26Z
onsemiIn Stock: 40106J109-D26Z Datasheet
J109-D26Z
Upgrade
MMBFJ108
onsemiIn Stock: 1197MMBFJ108 Datasheet
MMBFJ108
Similar

Key Parameters

Parameter Value Unit
Voltage - Breakdown (V(BR)GSS) 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 10 @ 15 mA @ V
Voltage - Cutoff (VGS off) @ Id 500 mV @ 1 µA mV @ µA
Resistance - RDS(On) 18 Ohms
Power - Max 310 mW
Operating Temperature 135 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-92-3 -

Substitute Part Grouping Explanation

Substitution eligibility for the J110 is determined by the following criteria:

Electrical Compatibility Requirements:

  • Voltage - Breakdown (V(BR)GSS) must equal or exceed 25 V
  • Current - Drain (Idss) characteristics must support the application's bias point requirements
  • Resistance - RDS(On) must be compatible with circuit performance expectations
  • Power - Max rating must accommodate thermal dissipation requirements

Mechanical & Packaging Considerations:

  • Through Hole mounting compatibility (TO-92 package family)
  • Surface Mount alternatives (SOT-23) acceptable for redesigned layouts

Compliance & Availability:

  • Active product status preferred for long-term supply assurance
  • RoHS3 compliance required for new designs
  • Inventory availability documented

Two substitute categories are identified:

Upgrade Substitute (Direct Replacement): J109-D26Z maintains Through Hole TO-92-3 package compatibility with enhanced electrical performance and active product status.

Alternative Substitute (Package Variant): MMBFJ108 provides equivalent electrical function in Surface Mount SOT-23-3 package, suitable for designs permitting package migration.

Parameter Comparison

Parameter J110 (Main) J109-D26Z (Upgrade) MMBFJ108 (Alternative)
Manufacturer onsemi onsemi onsemi
FET Type N-Channel N-Channel N-Channel
Voltage - Breakdown (V(BR)GSS) 25 V 25 V 25 V
Current - Drain (Idss) @ Vds (Vgs=0) 10 mA @ 15 V 40 mA @ 15 V 80 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 500 mV @ 1 µA 2 V @ 10 nA 3 V @ 10 nA
Resistance - RDS(On) 18 Ohms 12 Ohms 8 Ohms
Power - Max 310 mW 625 mW 350 mW
Operating Temperature Range 135°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount
Package / Case TO-92-3 TO-92-3 SOT-23-3
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

J109-D26Z (Upgrade Substitute): Select this part for direct replacement in existing Through Hole TO-92-3 designs. The J109-D26Z is active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Enhanced electrical performance (lower RDS(On), higher power rating, extended temperature range) provides design margin without circuit modification. Inventory availability (40,055 pcs) supports production requirements.

MMBFJ108 (Alternative Substitute): Select this part for new designs or redesigned layouts permitting Surface Mount SOT-23-3 package migration. The MMBFJ108 offers superior electrical performance (8 Ohms RDS(On), 350 mW power rating) with active product status and ROHS3 compliance. This option requires PCB layout modification and assembly process changes but provides performance advantages for applications with thermal or space constraints.

Obsolescence Mitigation: The J110 obsolete status necessitates design transition to either substitute. J109-D26Z provides the lowest implementation risk through package compatibility. MMBFJ108 requires design revision but aligns with modern Surface Mount manufacturing practices.

Frequently Asked Questions (FAQ)

Q: Can J109-D26Z directly replace J110 without circuit modification? A: Yes. J109-D26Z maintains identical TO-92-3 Through Hole package pinout and exceeds J110 electrical specifications across all key parameters. No circuit changes are required.

Q: What are the electrical differences between J110 and J109-D26Z? A: J109-D26Z provides higher drain current (40 mA vs. 10 mA @ 15 V), lower on-resistance (12 Ohms vs. 18 Ohms), higher power rating (625 mW vs. 310 mW), and extended operating temperature range (-55°C to 150°C vs. 135°C maximum). These represent performance improvements compatible with J110 circuit applications.

Q: Is MMBFJ108 a direct replacement for J110? A: MMBFJ108 is electrically equivalent but requires package migration from Through Hole TO-92-3 to Surface Mount SOT-23-3. PCB layout and assembly process changes are necessary. Electrical performance exceeds J110 specifications.

Q: Why does MMBFJ108 have higher drain current than J109-D26Z? A: Drain current (Idss) variation reflects device characterization at the specified test conditions. Both parts maintain 25 V breakdown voltage and are suitable for J110 replacement based on application requirements. Circuit design determines which device is appropriate.

Q: Are all substitute parts RoHS3 compliant? A: Yes. Both J109-D26Z and MMBFJ108 are ROHS3 compliant. The original J110 is RoHS non-compliant, making substitution necessary for designs requiring regulatory compliance.

Q: What is the inventory status of substitute parts? A: J109-D26Z: 40,055 pcs in stock. MMBFJ108: 1,106 pcs in stock. Both parts are available as new original components.

Q: Can I use MMBFJ108 in a Through Hole design without layout changes? A: No. MMBFJ108 is Surface Mount SOT-23-3 package only. Through Hole designs require J109-D26Z or equivalent TO-92 package devices.

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