IXTY8N70X2 N-Channel MOSFET 700V 8A TO-252 Equivalent & Substitute Parts

Part Overview

The IXTY8N70X2 is an N-Channel MOSFET manufactured by IXYS in the Ultra X2 series, rated for 700V drain-to-source voltage and 8A continuous drain current at 25°C. This device is housed in a TO-252-3 (DPAK) surface mount package and is designed for high-voltage switching applications. The part is currently active in production with RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are identified based on matching or closely aligned electrical characteristics including drain-to-source voltage rating, continuous drain current capability, on-resistance specifications, gate charge, and compatible surface mount packaging. Substitutes are selected from active production parts with equivalent or superior performance parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	700	V
Continuous Drain Current (Id) @ 25°C	8	A (Tc)
On-Resistance (Rds On Max) @ 500mA, 10V	500	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	5	V
Gate Charge (Qg Max) @ 10V	12	nC
Power Dissipation (Max)	150	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-252-3 DPAK	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IXTY8N70X2 is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a drain-to-source voltage (Vdss) rating equal to or greater than 700V to maintain system voltage margin and reliability. Parts rated at 600V or 650V operate at reduced voltage headroom and are classified as lower-voltage alternatives suitable only for applications with confirmed voltage derating requirements.

Current Capability: Continuous drain current (Id) at 25°C must be equal to or exceed 8A to support the same load conditions. Parts rated below 8A (such as 6A or 7A devices) represent reduced current capacity and require application-level verification.

On-Resistance (Rds On): Lower on-resistance values indicate improved efficiency and reduced power dissipation. The IXTY8N70X2 specifies 500mOhm maximum at 500mA, 10V. Substitute parts with lower Rds On values (such as 420mOhm) provide performance improvement; higher values increase thermal load.

Gate Charge (Qg): Gate charge affects switching speed and driver requirements. The IXTY8N70X2 specifies 12nC maximum at 10V. Substitute parts with significantly higher gate charge (such as 32nC) may require driver circuit evaluation.

Package Compatibility: All substitute parts must use the TO-252-3 DPAK surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts.

Compliance and Status: All substitute parts must be active in production with RoHS3 compliance to ensure long-term availability and regulatory alignment.

Parameter Comparison

Parameter	IXTY8N70X2 (Main)	IPD60R600P7SAUMA1	IPD65R420CFDAATMA1	TK560P60Y,RQ	TK560P65Y,RQ
Manufacturer	IXYS	Infineon Technologies	Infineon Technologies	Toshiba Semiconductor	Toshiba Semiconductor
Series	Ultra X2	CoolMOS™ P7	CoolMOS™	DTMOSV	DTMOSV
Vdss (V)	700	600	650	600	650
Id @ 25°C (A)	8	6	8.7	7	7
Rds On Max (mOhm)	500 @ 500mA, 10V	600 @ 1.7A, 10V	420 @ 3.4A, 10V	560 @ 3.5A, 10V	560 @ 3.5A, 10V
Vgs(th) Max (V)	5 @ 250µA	4 @ 80µA	4.5 @ 345µA	4 @ 240µA	4 @ 240µA
Qg Max (nC)	12 @ 10V	9 @ 10V	32 @ 10V	14.5 @ 10V	14.5 @ 10V
Ciss Max (pF)	800 @ 10V	363 @ 400V	870 @ 100V	380 @ 300V	380 @ 300V
Power Dissipation Max (W)	150	30	83.3	60	60
Operating Temperature (°C)	-55 to 150	-40 to 150	-40 to 150	150 (Max)	150 (Max)
Package	TO-252-3 DPAK	PG-TO252-3	PG-TO252-3	DPAK	DPAK
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Direct Equivalent (Highest Compatibility):

IPD65R420CFDAATMA1 (Infineon CoolMOS™) provides the closest electrical match to the IXTY8N70X2. This device maintains a 650V voltage rating (within 50V of the main part), exceeds the 8A current requirement at 8.7A, and delivers superior on-resistance performance at 420mOhm. The gate charge specification of 32nC is elevated compared to the main part but remains within acceptable switching frequency ranges for standard power conversion topologies. This part carries AEC-Q101 automotive qualification and unlimited MSL rating, supporting both commercial and automotive applications. All compliance certifications (RoHS3, REACH Unaffected, EAR99) align with the main part.

Voltage-Reduced Alternatives (Application-Dependent):

IPD60R600P7SAUMA1 (Infineon CoolMOS™ P7) and TK560P60Y,RQ (Toshiba DTMOSV) both operate at 600V, representing a 100V reduction from the IXTY8N70X2 specification. These parts are suitable for applications with confirmed maximum operating voltages at or below 600V. The IPD60R600P7SAUMA1 provides 6A current capacity (below the 8A requirement) and requires thermal derating analysis. The TK560P60Y,RQ delivers 7A current capacity with 60W power dissipation, suitable for moderate-power switching applications. Both parts maintain RoHS3 compliance and active production status.

TK560P65Y,RQ (Toshiba DTMOSV) operates at 650V with 7A current capacity and 60W power dissipation. This device bridges the voltage and current gap between the 600V alternatives and the main part, offering a practical substitute for applications tolerating 7A current and 650V voltage operation. Unlimited MSL rating and RoHS3 compliance are confirmed.

Selection Criteria Summary:

All substitute parts are active in production with RoHS3 compliance and REACH Unaffected status. Package compatibility (TO-252-3 DPAK) is confirmed across all alternatives. Selection between alternatives depends on application voltage ceiling, current requirement, thermal budget, and switching frequency. The IPD65R420CFDAATMA1 is recommended for direct replacement in existing designs. Lower-voltage alternatives require application-level voltage margin verification before implementation.

Frequently Asked Questions (FAQ)

Q: Can the IPD65R420CFDAATMA1 directly replace the IXTY8N70X2 in my circuit?

A: The IPD65R420CFDAATMA1 is electrically compatible for direct replacement in applications where the circuit maximum voltage does not exceed 650V. The 50V voltage margin reduction is acceptable in most power conversion topologies. The superior on-resistance (420mOhm vs. 500mOhm) reduces power dissipation. Verify gate charge compatibility with your driver circuit, as the IPD65R420CFDAATMA1 specifies 32nC compared to 12nC for the IXTY8N70X2.

Q: What is the difference between the 600V and 650V substitute options?

A: The 600V alternatives (IPD60R600P7SAUMA1 and TK560P60Y,RQ) operate at reduced voltage headroom and are suitable only for applications with confirmed maximum operating voltages at or below 600V. The 650V alternatives (IPD65R420CFDAATMA1 and TK560P65Y,RQ) provide closer voltage alignment to the 700V main part and are preferred for general-purpose substitution. Voltage selection depends on your application's maximum transient and steady-state voltage requirements.

Q: Are all substitute parts available in the same package?

A: Yes. All substitute parts use the TO-252-3 DPAK surface mount package, ensuring mechanical and thermal compatibility with existing PCB layouts. No PCB redesign is required for package accommodation.

Q: What does MSL rating mean, and why does it matter?

A: Moisture Sensitivity Level (MSL) indicates the maximum time a component can be exposed to ambient conditions (typically 30°C, 85% relative humidity) before soldering. MSL 1 (unlimited) parts like the IXTY8N70X2, IPD65R420CFDAATMA1, TK560P60Y,RQ, and TK560P65Y,RQ have no time restrictions. The IPD60R600P7SAUMA1 carries MSL 3 (168 hours), requiring bake-out procedures if storage time exceeds this limit. For high-volume manufacturing with extended component storage, MSL 1 parts are preferred.

Q: How does gate charge affect my circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXTY8N70X2 specifies 12nC, while the IPD65R420CFDAATMA1 specifies 32nC. Higher gate charge increases switching losses and may require a more robust gate driver. For switching frequencies below 100kHz, the gate charge difference is typically negligible. For higher frequencies or current-limited driver circuits, verify that your gate driver can supply the required charge within acceptable switching time windows.

Q: Can I use a 600V part in a 700V application?

A: No. Using a 600V-rated device in a 700V application violates the absolute maximum voltage rating and creates risk of device failure and circuit damage. Voltage ratings must not be exceeded under any operating condition, including transient overvoltages. If your application requires 700V operation, select parts with 700V or higher ratings, or confirm through detailed circuit analysis that maximum voltages remain below 600V under all conditions.

Q: What is the difference between the Infineon and Toshiba substitute options?

A: Both manufacturers provide active, RoHS3-compliant alternatives. Infineon CoolMOS™ devices (IPD60R600P7SAUMA1 and IPD65R420CFDAATMA1) emphasize low on-resistance and efficiency. Toshiba DTMOSV devices (TK560P60Y,RQ and TK560P65Y,RQ) provide balanced performance with proven reliability in industrial applications. Selection between manufacturers depends on supply chain preference, existing design validation history, and application-specific performance requirements. Both are suitable for direct substitution based on electrical parameters.

Q: Is the IPD65R420CFDAATMA1 automotive-qualified?

A: Yes. The IPD65R420CFDAATMA1 carries AEC-Q101 automotive qualification, making it suitable for automotive and industrial applications requiring automotive-grade component certification. The IXTY8N70X2 and other substitute parts do not carry explicit automotive qualification but are RoHS3 compliant and suitable for commercial and industrial applications.

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