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IXTY5N50P N-Channel 500V 4.8A MOSFET Equivalent & Substitute Parts
Part Overview
The IXTY5N50P is an N-Channel MOSFET manufactured by IXYS, rated for 500V drain-to-source voltage with 4.8A continuous drain current at 25°C. This device is housed in a TO-252AA (DPAK) surface mount package and is part of the PolarHV™ series. The IXTY5N50P is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, production continuity, and system maintenance applications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 500 | V |
| Continuous Drain Current (Id) @ 25°C | 4.8 | A (Tc) |
| On-State Resistance (Rds On) @ 2.4A, 10V | 1.4 | Ohm |
| Gate Threshold Voltage (Vgs(th)) @ 50µA | 5.5 | V |
| Gate Charge (Qg) @ 10V | 12.6 | nC |
| Input Capacitance (Ciss) @ 25V | 620 | pF |
| Power Dissipation (Max) | 89 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | TO-252-3 DPAK | Surface Mount |
| Moisture Sensitivity Level | 1 (Unlimited) | MSL |
Substitute Part Grouping Explanation
Substitute parts for the IXTY5N50P are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:
Critical Matching Parameters:
- Drain-to-Source Voltage (Vdss): 500V minimum
- Continuous Drain Current (Id): 4.8A minimum at 25°C
- On-State Resistance (Rds On): Comparable performance at rated current and gate voltage
- Package Type: TO-252-3 DPAK surface mount configuration
- Operating Temperature Range: -55°C to 150°C minimum
- Gate Voltage Rating (Vgs Max): ±30V or greater
Acceptable Variation Ranges: Substitute devices may exceed the IXTY5N50P specifications in voltage rating, current capacity, and power dissipation without functional degradation. Devices with lower specifications in these parameters are not acceptable substitutes. Gate charge, input capacitance, and threshold voltage variations within the specified ranges do not prevent substitution provided other critical parameters are met.
Parameter Comparison
| Parameter | IXTY5N50P | IRFR825TRPBF | FDD5N50TM-WS | IRFR430ATRLPBF | IRFR320TRRPBF | STD5N52U | STD5N52K3 |
|---|---|---|---|---|---|---|---|
| Manufacturer | IXYS | Infineon | onsemi | Vishay Siliconix | Vishay Siliconix | STMicroelectronics | STMicroelectronics |
| Vdss (V) | 500 | 500 | 500 | 500 | 400 | 525 | 525 |
| Id @ 25°C (A) | 4.8 | 6 | 4 | 5 | 3.1 | 4.4 | 4.4 |
| Rds On (Ohm) | 1.4 @ 2.4A | 1.3 @ 3.7A | 1.4 @ 2A | 1.7 @ 3A | 1.8 @ 1.9A | 1.5 @ 2.2A | 1.5 @ 2.2A |
| Vgs(th) (V) | 5.5 @ 50µA | 5 @ 250µA | 5 @ 250µA | 4.5 @ 250µA | 4 @ 250µA | 4.5 @ 50µA | 4.5 @ 50µA |
| Qg (nC) | 12.6 @ 10V | 34 @ 10V | 15 @ 10V | 24 @ 10V | 20 @ 10V | 16.9 @ 10V | 17 @ 10V |
| Ciss (pF) | 620 @ 25V | 1346 @ 25V | 640 @ 25V | 490 @ 25V | 350 @ 25V | 529 @ 25V | 545 @ 100V |
| Power Dissipation (W) | 89 (Tc) | 119 (Tc) | 40 (Tc) | 110 (Tc) | 42 (Tc) | 70 (Tc) | 70 (Tc) |
| Vgs Max (V) | ±30 | ±20 | ±30 | ±30 | ±20 | ±30 | ±30 |
| Operating Temp (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 |
| Package | TO-252AA | TO-252AA | TO-252AA | DPAK | DPAK | DPAK | DPAK |
| Product Status | Obsolete | Not For New Designs | Obsolete | Active | Active | Active | Active |
| RoHS Compliance | Not specified | ROHS3 | ROHS3 | ROHS3 | ROHS3 | ROHS3 | ROHS3 |
Engineering Selection Recommendations
Primary Substitutes (Active Product Status):
The IRFR430ATRLPBF (Vishay Siliconix) and STD5N52U (STMicroelectronics) are the preferred substitutes for the IXTY5N50P. Both devices are classified as Active products, ensuring long-term availability and manufacturing support. The IRFR430ATRLPBF provides 500V/5A ratings with 1.7Ohm Rds On, exceeding the IXTY5N50P current specification while maintaining voltage compatibility. The STD5N52U offers 525V/4.4A with 1.5Ohm Rds On and is RoHS3 compliant, providing enhanced environmental compliance.
Secondary Substitutes (Limited Availability):
The IRFR825TRPBF (Infineon) is classified as Not For New Designs but remains functionally compatible with 500V/6A ratings and 1.3Ohm Rds On. This device is suitable for legacy system maintenance where existing inventory exists. The FDD5N50TM-WS (onsemi) is obsolete but electrically compatible at 500V/4A, appropriate for direct replacement in existing applications.
Voltage-Reduced Alternative:
The IRFR320TRRPBF (Vishay Siliconix) operates at 400V maximum, below the IXTY5N50P 500V rating. This device is not suitable for applications requiring full 500V voltage headroom but may be considered for systems with reduced voltage stress margins.
Compliance Considerations:
All recommended active substitutes carry RoHS3 compliance certification. The IXTY5N50P compliance status is not specified in available documentation. For applications requiring documented environmental compliance, selection of RoHS3-certified alternatives is necessary.
Frequently Asked Questions (FAQ)
Q: Can the IRFR825TRPBF replace the IXTY5N50P in new designs?
A: The IRFR825TRPBF is classified as Not For New Designs by the manufacturer. While electrically compatible, it is not recommended for new product development. The IRFR430ATRLPBF or STD5N52U are preferred for new designs.
Q: What is the significance of the voltage rating difference between the IXTY5N50P (500V) and STD5N52U (525V)?
A: The STD5N52U 525V rating exceeds the IXTY5N50P 500V specification, providing additional voltage margin. This higher rating does not prevent substitution and may improve reliability in applications with voltage transients. The device remains fully compatible with 500V system designs.
Q: Are all substitute parts available in the same TO-252AA package?
A: All substitute parts are available in TO-252-3 DPAK (2 Leads + Tab) surface mount packages, which are mechanically and electrically equivalent to the TO-252AA package. Direct PCB footprint compatibility is maintained across all listed substitutes.
Q: How does the gate charge (Qg) difference affect circuit performance?
A: The IRFR825TRPBF exhibits higher gate charge (34nC) compared to the IXTY5N50P (12.6nC). Higher gate charge increases driver power dissipation and switching time. For applications with tight switching frequency requirements or limited driver capability, lower gate charge devices such as the IRFR320TRRPBF (20nC) or STD5N52U (16.9nC) may be preferred.
Q: Is the IRFR320TRRPBF suitable as a direct replacement?
A: The IRFR320TRRPBF operates at 400V maximum, which is below the IXTY5N50P 500V rating. This device is not suitable for applications requiring the full 500V voltage specification. It may only be used in systems where the actual operating voltage does not exceed 400V.
Q: What is the impact of Rds On variation among substitute parts?
A: On-state resistance variations affect conduction losses and thermal performance. The IRFR825TRPBF (1.3Ohm) provides the lowest Rds On, resulting in reduced power dissipation. The IRFR320TRRPBF (1.8Ohm) exhibits higher conduction losses. For thermal-constrained applications, lower Rds On devices improve efficiency.
Q: Are all substitute parts moisture sensitive?
A: All listed devices carry MSL 1 (Unlimited) moisture sensitivity classification, indicating no moisture sensitivity restrictions. Standard handling procedures apply without special moisture control requirements.
Q: Which substitute offers the best long-term availability?
A: The STD5N52U and STD5N52K3 (both STMicroelectronics) and IRFR430ATRLPBF (Vishay Siliconix) are classified as Active products with the highest probability of sustained manufacturing and supply continuity. These devices are recommended for applications requiring extended product lifecycle support.
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