IXTY55N075T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IXTY55N075T is an N-Channel MOSFET manufactured by IXYS, rated for 75V drain-to-source voltage with 55A continuous drain current in a Surface Mount TO-252AA package. This device is part of the TrenchMV™ series and is currently classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	55	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	19.5 mOhm @ 27.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 25µA
Gate Charge (Qg Max) @ Vgs	33	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	1400	pF @ 25V
Power Dissipation (Max)	130	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3, DPAK (2 Leads + Tab), SC-63	Surface Mount
Moisture Sensitivity Level (MSL)	1	Unlimited

Substitute Part Grouping Explanation

Substitution of the IXTY55N075T is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥75V to maintain voltage margin
Continuous Drain Current (Id): Must be ≥55A to support the required current capacity
Package Type: Must be TO-252-3 (DPAK) Surface Mount for mechanical compatibility
Operating Temperature Range: Must support -55°C to 175°C minimum
On-Resistance (Rds On): Lower values indicate improved performance; values within 16–24 mOhm are acceptable for this voltage class

Secondary Compatibility Parameters:

Gate Threshold Voltage (Vgs(th)): Acceptable range 2.5V to 4.5V for standard logic-level gate drive
Gate Charge (Qg): Values between 20–80 nC are compatible with standard gate driver circuits
Input Capacitance (Ciss): Values between 900–2711 pF are acceptable for switching applications
Power Dissipation: Minimum 110W (Tc) required for thermal equivalence

Substitute parts are grouped into two categories:

Category A – Direct Voltage/Current Equivalents (75V, ≥50A): Parts maintaining the original 75V rating with current capacity at or near 55A. These provide the closest electrical match.

Category B – Reduced Voltage Alternatives (60V, ≥43A): Parts rated at 60V with current capacity ≥43A. These are suitable for applications where the 75V rating is not critical and provide cost or availability advantages. Voltage derating must be evaluated by the design engineer.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Pd Max (W)	Tj Range (°C)	Package	Status
IXTY55N075T	IXYS	75	55 (Tc)	19.5 @ 27.5A, 10V	33 @ 10V	1400 @ 25V	130 (Tc)	-55 to 175	TO-252AA	Obsolete
IXTY44N10T	IXYS	100	44 (Tc)	30 @ 22A, 10V	33 @ 10V	1262 @ 25V	130 (Tc)	-55 to 175	TO-252AA	Active
FDD16AN08A0	onsemi	75	50 (Tc)	16 @ 50A, 10V	47 @ 10V	1874 @ 25V	135 (Tc)	-55 to 175	TO-252AA	Active
IRFR2307ZTRLPBF	Infineon Technologies	75	42 (Tc)	16 @ 32A, 10V	75 @ 10V	2190 @ 25V	110 (Tc)	-55 to 175	TO-252AA	Active
IRFR2607ZTRPBF	Infineon Technologies	75	42 (Tc)	22 @ 30A, 10V	51 @ 10V	1440 @ 25V	Not Specified	Not Specified	TO-252-3	Active
STD45NF75T4	STMicroelectronics	75	40 (Tc)	24 @ 20A, 10V	80 @ 10V	1760 @ 25V	125 (Tc)	-55 to 175	TO-252-3	Active
DMN6017SK3-13	Diodes Incorporated	60	43 (Tc)	18 @ 6A, 10V	55 @ 10V	2711 @ 15V	50 (Tc)	-55 to 150	TO-252	Active
DMNH6021SK3Q-13	Diodes Incorporated	60	50 (Tc)	23 @ 12A, 10V	20.1 @ 10V	1143 @ 25V	2.1 (Ta)	-55 to 175	TO-252-3	Active
TSM170N06CP ROG	Taiwan Semiconductor Corporation	60	38 (Tc)	17 @ 20A, 10V	28.5 @ 10V	900 @ 25V	46 (Tc)	-55 to 150	TO-252	Active

Engineering Selection Recommendations

Category A – Direct 75V Voltage Equivalents (Recommended Primary Substitutes):

FDD16AN08A0 (onsemi UltraFET™) is the preferred primary substitute. It maintains the 75V rating with 50A continuous drain current, exceeding the original 55A specification. The device features superior on-resistance (16 mOhm) and is RoHS3 compliant with active product status. Operating temperature range (-55°C to 175°C) matches the original specification. Power dissipation of 135W (Tc) provides thermal equivalence.

IRFR2307ZTRLPBF (Infineon HEXFET®) is an alternative 75V substitute with 42A continuous drain current. While current capacity is reduced relative to the original, the device is suitable for applications not requiring the full 55A specification. On-resistance of 16 mOhm provides efficient switching performance. RoHS3 compliance and active status support long-term availability.

STD45NF75T4 (STMicroelectronics STripFET™ II) maintains 75V rating with 40A continuous drain current. This device is suitable for reduced-current applications. Power dissipation of 125W (Tc) and RoHS3 compliance ensure thermal and regulatory compatibility.

IXTY44N10T (IXYS Trench) is an alternative from the same manufacturer, rated at 100V with 44A continuous drain current. This part provides higher voltage margin but reduced current capacity. Active product status and RoHS3 compliance support availability.

Category B – Reduced Voltage Alternatives (60V, for Voltage-Derating Applications):

DMNH6021SK3Q-13 (Diodes Incorporated) is rated at 60V with 50A continuous drain current, matching the original current specification. This automotive-grade device (AEC-Q101 qualified) features the lowest gate charge (20.1 nC) among all substitutes, enabling faster switching. Operating temperature range extends to 175°C. This part is suitable for applications where 60V operation is acceptable and cost optimization is a priority.

DMN6017SK3-13 (Diodes Incorporated) is rated at 60V with 43A continuous drain current. On-resistance of 18 mOhm provides acceptable switching performance. RoHS3 compliance and active status support production use.

TSM170N06CP ROG (Taiwan Semiconductor Corporation) is rated at 60V with 38A continuous drain current. This device features the lowest input capacitance (900 pF) among all substitutes, reducing gate drive requirements. Operating temperature range is limited to -55°C to 150°C, which may restrict use in high-temperature applications.

IRFR2607ZTRPBF (Infineon HEXFET®) maintains 75V rating with 42A continuous drain current. Complete thermal and operating temperature specifications are not provided in the available data; verification with the manufacturer datasheet is required before design implementation.

Frequently Asked Questions (FAQ)

Q1: Can the IXTY55N075T be directly replaced with a 60V-rated MOSFET?

A: Substitution with 60V-rated devices is possible only if the application circuit design permits voltage derating. The original IXTY55N075T is rated for 75V operation. Devices such as DMNH6021SK3Q-13 and DMN6017SK3-13 are rated at 60V and are suitable for applications where the maximum drain-to-source voltage does not exceed 60V. Circuit analysis must confirm that transient overvoltage conditions do not exceed the substitute device rating.

Q2: What is the primary advantage of FDD16AN08A0 as a substitute?

A: The FDD16AN08A0 maintains the original 75V drain-to-source voltage rating while providing 50A continuous drain current (compared to the original 55A). The device features superior on-resistance (16 mOhm) and higher power dissipation capability (135W), enabling improved thermal performance. Active product status and RoHS3 compliance ensure long-term availability and regulatory compliance.

Q3: Why does DMNH6021SK3Q-13 have a lower power dissipation specification than other substitutes?

A: The DMNH6021SK3Q-13 power dissipation is specified as 2.1W (Ta), which differs from the thermal case (Tc) specification used for other devices. This specification reflects ambient temperature (Ta) rating rather than case temperature (Tc) rating. The device is automotive-grade (AEC-Q101 qualified) and is optimized for automotive thermal management requirements. Refer to the manufacturer datasheet for detailed thermal characteristics and junction-to-case thermal resistance (Rθ(j-c)).

Q4: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed are RoHS3 compliant except where compliance status is not specified in the available data. IRFR2607ZTRPBF does not include RoHS status in the provided specifications; verification with the manufacturer is recommended for regulatory compliance confirmation.

Q5: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values reduce gate driver power consumption and enable faster switching transitions. DMNH6021SK3Q-13 features the lowest gate charge (20.1 nC), while IRFR2307ZTRLPBF has the highest (75 nC). Gate driver circuit design must accommodate the gate charge specification of the selected substitute to ensure proper switching performance and reliability.

Q6: Can IXTY44N10T be used as a substitute despite its higher voltage rating?

A: Yes, IXTY44N10T can be used as a substitute in applications where the higher 100V rating does not create design complications. The device provides higher voltage margin for transient overvoltage protection. However, the reduced continuous drain current (44A versus 55A) may limit use in high-current applications. The device is active and RoHS3 compliant, supporting long-term availability.

Q7: What package compatibility considerations apply to these substitutes?

A: All substitute parts use the TO-252-3 (DPAK) Surface Mount package, which is mechanically and electrically compatible with the original IXTY55N075T TO-252AA package. Pin configuration and lead spacing are identical, enabling direct PCB layout compatibility without redesign. Verify footprint dimensions with the specific manufacturer datasheet to confirm solder pad alignment.

Q8: Which substitute is recommended for automotive applications?

A: DMNH6021SK3Q-13 is specifically qualified for automotive use (AEC-Q101 certification). This device is rated at 60V with 50A continuous drain current and features automotive-grade reliability standards. If the application requires 75V operation, IRFR2307ZTRLPBF or FDD16AN08A0 should be evaluated for automotive compatibility through the respective manufacturers.

Q9: What is the operating temperature range limitation for TSM170N06CP ROG?

A: TSM170N06CP ROG is rated for -55°C to 150°C junction temperature, which is 25°C lower than the original IXTY55N075T specification (-55°C to 175°C). This device is not suitable for applications requiring operation above 150°C. Alternative substitutes with extended temperature range (-55°C to 175°C) include FDD16AN08A0, IRFR2307ZTRLPBF, STD45NF75T4, IXTY44N10T, and DMNH6021SK3Q-13.

Q10: How should on-resistance (Rds On) differences affect substitute selection?

A: On-resistance directly impacts power dissipation and thermal performance. Lower Rds On values reduce conduction losses. The original IXTY55N075T specifies 19.5 mOhm at 27.5A and 10V gate voltage. Substitutes range from 16 mOhm (FDD16AN08A0, IRFR2307ZTRLPBF) to 30 mOhm (IXTY44N10T). For applications with high continuous current or stringent thermal requirements, devices with lower Rds On (16–18 mOhm) are preferred. For lower-current applications, higher Rds On values are acceptable if thermal analysis confirms adequate heat dissipation.

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