IXTY4N60P N-Channel 600V 4A MOSFET Equivalent & Substitute Parts

Part Overview

The IXTY4N60P is an N-Channel MOSFET manufactured by IXYS, rated for 600V drain-to-source voltage with 4A continuous drain current at 25°C. The device is housed in a TO-252AA surface mount package and belongs to the PolarHV™ series. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Substiute Parts

IXTY4N60P

IXYSIn Stock: 1265IXTY4N60P Datasheet

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IXTY4N65X2

IXYSIn Stock: 1278IXTY4N65X2 Datasheet

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IPD80R2K0P7ATMA1

Infineon TechnologiesIn Stock: 1095IPD80R2K0P7ATMA1 Datasheet

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STD3N62K3

STMicroelectronicsIn Stock: 15855STD3N62K3 Datasheet

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STD4N62K3

STMicroelectronicsIn Stock: 15752STD4N62K3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the IXTY4N60P is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel topology
• Drain to Source Voltage (Vdss): Minimum 600V rating required
• Current - Continuous Drain (Id) @ 25°C: Minimum 4A rating required
• Drive Voltage: 10V gate drive compatibility
• Mounting Type: Surface Mount
• Package / Case: TO-252-3 DPAK form factor

Secondary Compatibility Factors:

• Rds On (Max) @ Id, Vgs: Lower or equivalent on-resistance
• Gate Charge (Qg): Lower or equivalent gate charge for switching performance
• Power Dissipation (Max): Thermal capability at or above 89W
• Operating Temperature Range: Full -55°C to 150°C support
• Vgs (Max): ±30V gate voltage tolerance

The substitute parts listed below meet or exceed the primary criteria while maintaining electrical and mechanical compatibility with the IXTY4N60P application envelope.

Parameter Comparison

Engineering Selection Recommendations

IXTY4N65X2 (IXYS Ultra X2 Series)

The IXTY4N65X2 is the primary substitute for the IXTY4N60P. Both devices are manufactured by IXYS and share identical drain current (4A) and gate drive voltage (10V) specifications. The IXTY4N65X2 provides a higher Vdss rating (650V vs. 600V), lower on-resistance (0.85 Ohm vs. 2 Ohm), and reduced gate charge (8.3 nC vs. 13 nC). The device is active in production status and ROHS3 compliant. The Ultra X2 series represents a technology advancement over the obsolete PolarHV™ series.

STD4N62K3 (STMicroelectronics SuperMESH3™ Series)

The STD4N62K3 offers the closest current rating match (3.8A vs. 4A) among STMicroelectronics alternatives. The Vdss rating (620V) exceeds the minimum 600V requirement. On-resistance is 1.95 Ohm at 1.9A, 10V, which is lower than the IXTY4N60P specification. Power dissipation capability is 70W, which is below the original 89W rating. This device is active in production and ROHS3 compliant.

STD3N62K3 (STMicroelectronics SuperMESH3™ Series)

The STD3N62K3 provides a lower current rating (2.7A vs. 4A) and reduced power dissipation (45W vs. 89W). The Vdss rating (620V) meets the minimum requirement. This device is suitable only for applications where the 4A continuous drain current is not fully utilized. The device is active in production and ROHS3 compliant.

IPD80R2K0P7ATMA1 (Infineon CoolMOS™ P7 Series)

The IPD80R2K0P7ATMA1 provides the highest Vdss rating (800V) but with reduced continuous drain current (3A vs. 4A) and significantly lower power dissipation (24W vs. 89W). The Vgs (Max) rating is ±20V, which is lower than the ±30V specification of the IXTY4N60P. This device is suitable for applications requiring higher voltage blocking capability with lower current and thermal requirements. The device is active in production and ROHS3 compliant.

Frequently Asked Questions (FAQ)

Q: Can the IXTY4N65X2 directly replace the IXTY4N60P in all applications?

A: The IXTY4N65X2 is electrically compatible with the IXTY4N60P for applications operating at or below 600V. The higher Vdss rating (650V) provides additional voltage margin. Both devices share identical drain current (4A), gate drive voltage (10V), and TO-252-3 DPAK package. The IXTY4N65X2 exhibits superior performance characteristics with lower on-resistance and gate charge. Pin-to-pin compatibility is maintained.

Q: What is the primary limitation of the IPD80R2K0P7ATMA1 as a substitute?

A: The IPD80R2K0P7ATMA1 has a reduced continuous drain current rating (3A vs. 4A) and lower power dissipation capability (24W vs. 89W). Additionally, the Vgs (Max) rating is ±20V compared to ±30V for the IXTY4N60P. This device is suitable only for applications where the 4A current and 89W thermal dissipation are not required. The higher Vdss rating (800V) is beneficial for high-voltage applications.

Q: Are the STMicroelectronics devices (STD3N62K3 and STD4N62K3) pin-compatible with the IXTY4N60P?

A: Yes, both STMicroelectronics devices are housed in the TO-252-3 DPAK package with identical pin configuration to the IXTY4N60P. The package designation is identical: TO-252-3, DPAK (2 Leads + Tab), SC-63. Physical and electrical pin compatibility is maintained.

Q: Which substitute part offers the best thermal performance?

A: The IXTY4N65X2 provides the highest power dissipation capability (80W) among the active substitutes, approaching the original IXTY4N60P specification (89W). The STD4N62K3 offers 70W dissipation capability. The IPD80R2K0P7ATMA1 is limited to 24W dissipation. Thermal performance selection depends on application requirements.

Q: What is the significance of the RoHS3 compliance status?

A: All active substitute parts listed (IXTY4N65X2, IPD80R2K0P7ATMA1, STD3N62K3, STD4N62K3) are ROHS3 compliant. The original IXTY4N60P does not specify RoHS status. ROHS3 compliance indicates conformance to Restriction of Hazardous Substances Directive requirements and is required for many commercial and industrial applications, particularly in European markets.

Q: Can the IXTY4N60P be used interchangeably with STD4N62K3 in high-current applications?

A: The STD4N62K3 has a continuous drain current rating of 3.8A, which is slightly below the IXTY4N60P specification of 4A. For applications requiring the full 4A continuous current, the STD4N62K3 operates at the edge of its rated capability. The IXTY4N65X2 is the preferred substitute for applications requiring the full 4A rating.

Q: What packaging options are available for these substitute parts?

A: All substitute parts are available in TO-252-3 DPAK surface mount packaging, matching the IXTY4N60P form factor. Packaging variations include Tube (IXTY4N65X2), Tape & Reel (IPD80R2K0P7ATMA1), and Cut Tape & Digi-Reel® (STD3N62K3 and STD4N62K3). These packaging options do not affect electrical or mechanical compatibility.

Q: Is gate charge (Qg) a critical factor in selecting a substitute?

A: Gate charge affects switching speed and driver circuit requirements. The IXTY4N60P specifies 13 nC at 10V. The IXTY4N65X2 (8.3 nC) and IPD80R2K0P7ATMA1 (9 nC) have lower gate charge, resulting in faster switching and reduced driver power dissipation. The STD3N62K3 (13 nC) and STD4N62K3 (14 nC) have comparable or slightly higher gate charge. Lower gate charge is generally advantageous for high-frequency switching applications.